| Patent application number | Description | Published |
|---|
| 20080238550 | POWER AMPLIFIER AND TRANSMISSION AND RECEPTION SYSTEM - A power amplifier includes: a first multi-finger FET formed on a semiconductor substrate; a second multi-finger FET formed on the semiconductor substrate; a first temperature detector which detects a channel temperature of the first FET; a second temperature detector which detects a channel temperature of the second FET; a third temperature detector which detects a temperature of the semiconductor substrate; a first detection circuit detecting a difference between an output of the first temperature detector and an output of the third temperature detector and converting the difference to thermoelectromotive force; a second detection circuit detecting a difference between an output of the second temperature detector and the output of the third temperature detector and converting the difference to thermoelectromotive force; and a comparator comparing outputs of the first and second detection circuits with each other to turn on one of the first and second switches and turn off the other. | 10-02-2008 |
| 20080258815 | HIGH FREQUENCY POWER AMPLIFIER AND WIRELESS PORTABLE TERMINAL USING THE SAME - An object is to provide a high frequency power amplifier in which lowering of output power during operation is prevented, influence of thermal noise is suppressed, high frequency operation is stable, and long-term reliability is ensured. The high frequency power amplifier includes a plurality of transistors having gate electrodes, source regions and drain regions, the gate electrodes, source regions and drain regions being respectively connected in common, and a plurality of acoustic reflection layers being buried in portions of the semiconductor substrate, the portions being located between adjacent transistors, the acoustic reflection layers being disposed in a direction which is oblique to a length direction of the gate electrode. | 10-23-2008 |
| 20080318356 | SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING THE SAME - It is made possible to provide a highly integrated, thin apparatus can be obtained, even if the apparatus contains MEMS devices and semiconductor devices. A semiconductor apparatus includes: a first chip comprising a MEMS device formed therein; a second chip comprising a semiconductor device formed therein; and an adhesive layer bonding a side face of the first chip to a side face of the second chip, and having a lower Young's modulus than the material of the first and second chips. | 12-25-2008 |
| 20090050988 | MEMS APPARATUS AND METHOD OF MANUFACTURING THE SAME - A MEMS apparatus includes a MEMS unit formed on a semiconductor substrate and a cover provided with a pore and serving to seal the MEMS unit. The pore is sealed with a sealing material shaped in a sphere or a hemisphere. | 02-26-2009 |
| 20090079443 | SENSOR DEVICE AND DISPLAY APPARATUS - A sensor device according to an embodiment of the present invention includes an electrode array having plural electrodes arranged in an array manner, a signal generator configured to generate a first signal having a first frequency, and apply the first signal to the plural electrodes, and a detection unit configured to, when the first signal is applied to the plural electrodes, and a second signal having a second frequency is applied to an object to be detected, detect a distance between each electrode included in the electrode array and the surface of the object, using an interference wave between the first signal applied to each electrode and the second signal applied to the object, or detect irregularities on the surface of the object, using a signal generated by using the interference wave outputted from one electrode and the interference wave outputted from another electrode. | 03-26-2009 |
| 20090086879 | SENSOR DEVICE, AND SENSOR SYSTEM AND ELECTRONIC DEVICE USING THE SENSOR DEVICE - A sensor device which detects a positional relationship between an first member and second member, includes a signal source generating an electrical signal, a first electrode receiving the electrical signal and storing an electrical charge at a first part on the first member, a second electrode inducing an electrical charge at the second part on the second member, a third electrode inducing an electrical charge at the third part on the second member, a fourth electrode inducing an electrical charge at the fourth part on the first member, a reference electrode disposed at a fifth part on the second member to be connected to a reference voltage point, a fifth electrode inducing an electrical charge at the sixth part on the first member, and a differential amplifier amplifying a voltage difference between the fourth electrode and the fifth electrode and outputting a difference signal. | 04-02-2009 |
| 20090095909 | BOLOMETER TYPE UNCOOLED INFRARED RAY SENSOR AND METHOD FOR DRIVING THE SAME - A bolometer type uncooled infrared ray sensor includes: an image pickup region having detection pixels arranged in a matrix form on a semiconductor substrate to detect incident infrared rays; a plurality of row selection lines provided in the image pickup region; current sources capable of letting constant currents flow through the respective row selection lines; a plurality of signal lines provided in the image pickup region; voltage readout circuits provided so as to respectively correspond to the signal lines to read out signal voltages generated on the respectively corresponding signal lines; coupling capacitances respectively provided between the respective signal lines and the corresponding voltage readout circuits; and a calculator which calculates a difference between two signal voltages read out by the voltage readout circuits, corresponding to outputs of the same detection pixel for two different current values supplied from the current sources. | 04-16-2009 |
| 20090127639 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes: a first chip including a MEMS device which has a structure supported in midair therein, and having first pads and a first joining region electrically connected to the MEMS device on a top face thereof; a second chip including a circuit having a semiconductor device electrically connected to the MEMS device therein, and having second pads and a second joining region electrically connected to the semiconductor device on a top face thereof, the second chip being disposed in opposition to the first chip so as to oppose the second pads and the second joining region respectively to the first pads and the first joining region; electrical connection parts which electrically connect the first pads to the second pads, respectively; and joining parts provided between the first joining region and the second joining region opposed to the first joining region to join the first chip and the second chip to each other. | 05-21-2009 |
| 20090206444 | INTEGRATED SEMICONDUCTOR DEVICE - An integrated semiconductor device includes a plurality of semiconductor elements having different integrated element circuits or different sizes; an insulating material arranged between the semiconductor elements; an organic insulating film arranged entirely on the semiconductor elements and the insulating material; a fine thin-layer wiring that arranged on the organic insulating film and connects the semiconductor elements; a first input/output electrode arranged on an area of the insulating material; and a first bump electrode formed on the first input/output electrode. | 08-20-2009 |
| 20090236526 | INFRARED RAY SENSOR ELEMENT - An infrared ray sensor element includes: a first signal wiring part including a first signal wire and provided on a first region of a semiconductor substrate different from a region on which a concave part is provided; a second signal wiring part including a second signal wire and provided on the first region so as to intersect the first signal wiring part; a supporter including a support wiring part disposed over the concave part, and including a first wire electrically connected at a first end thereof to the first signal wire, and a second wire insulated from the first wire, disposed in parallel with the first wire, and electrically connected at a first end thereof to the second signal wire; a thermoelectric transducer electrically connected to second ends of the first and second wires; an infrared ray absorption layer provided over the thermoelectric transducer; and a detection cell provided over the concave part. | 09-24-2009 |
| 20090237772 | OPTICAL ELEMENT, OPTICAL DEVICE, AND DISPLAY DEVICE - An optical element includes a plurality of first beam bodies arranged in a first direction on a first plane and being parallel to each other, and second beam bodies placed between adjacent ones of the first beam bodies and provided parallel to the first beam bodies. The first beam body has side surfaces which face the second beam bodies adjacent thereto and are sloped so that the width in the first direction gradually decreases to the upward direction perpendicular to the first plane, the second beam body has side surfaces which face the first beam bodies adjacent thereto and are sloped so that the width in the first direction gradually increases to the upward direction perpendicular to the first plane, and as viewed in the first direction, the spacing between the first beam body and the second beam body is variable. | 09-24-2009 |
| 20090242951 | SOLID-STATE IMAGE PICKUP DEVICE - A solid-state image pickup device has a photoelectric conversion element that converts light incident from a first surface of a substrate into a signal charge and accumulates the signal charge, a transistor that is formed on a second surface side opposite to the first surface of the substrate and reads out the signal charge accumulated by the photoelectric conversion element, a supporting substrate stuck to the second surface of the substrate, and an antireflection coating formed on the first surface of the substrate, wherein the first surface of the substrate includes a curved surface or an inclined surface forming a prescribed angle to the second surface. | 10-01-2009 |
| 20090244346 | IMAGE SENSOR AND DRIVING METHOD THEREFOR - This disclosure concerns an image sensor including: an imaging area; row selection lines; and column signal lines, wherein a pixel includes: a photodiode; a capacitor connected to the photodiode at a first node; a reset transistor connected between the first node and a first power supply; a comparator comparing the potential of the first node with a reference voltage, and outputting a result to a gate of the reset transistor; a counter connected to the comparator, counting an inversion count of an output signal from the comparator, and outputting a digital value according to the inversion count, the output signal being generated from the comparator when the potential of the first node reaches the potential of the first power supply; and a selection transistor connected between the counter and one of the plurality of column signal lines, and having a gate connected to one of the row selection lines. | 10-01-2009 |
| 20090266987 | INFRARED DETECTOR AND SOLID STATE IMAGE SENSOR HAVING THE SAME - An infrared detector includes: a readout wiring portion provided on a semiconductor substrate; a support structure portion disposed over a concave portion formed in a surface portion of the semiconductor substrate, the support structure portion having connection wiring connected electrically to the readout wiring portion; and a cell portion disposed over the concave portion and supported by the support structure portion. The cell portion includes: an infrared absorption layer absorbing incident infrared rays; and a plurality of thermoelectric conversion elements connected electrically to the support structure portion and insulated electrically from the infrared absorption layer to generate an electric signal by detecting a temperature change of the cell portion, each of the thermoelectric conversion elements includes a semiconductor layer, a p-type silicon layer and an n-type silicon layer formed with a space between them in the semiconductor layer, and a polysilicon layer formed on the semiconductor layer between the p-type silicon layer and the n-type silicon layer. | 10-29-2009 |
| 20100025584 | IMAGE SENSOR AND MANUFACTURING METHOD THEREOF - An image sensor includes a semiconductor substrate; first pixels laid out above cavities provided within the semiconductor substrate, the first pixels converting thermal energy generated by incident light into an electric signal; supporting parts connected between the first pixels and the semiconductor substrate, the supporting parts supporting the first pixels above the cavities; and second pixels fixedly provided on the semiconductor substrate without via the cavities, wherein a plurality of the first pixels and a plurality of the second pixels are laid out two-dimensionally to form a pixel region, and each of the second pixels is adjacent to the first pixels. | 02-04-2010 |
| 20100026319 | SENSOR DEVICE, AND PORTABLE COMMUNICATION TERMINAL AND ELECTRONIC DEVICE USING THE SENSOR DEVICE - A sensor device for detecting a positional relationship between a first member and a second member, includes a first electrode provided on a surface of the first member and supplied with an alternating signal of a first frequency, a second electrode provided on a surface of the second member and supplied with an alternating signal of a second frequency, and a beat detector which detects a beat frequency component corresponding to a difference between the first and second frequencies indicative of the positional relationship between the first member and the second member, when the positional relationship between the first and second members changes to cause the first electrode to approach the second electrode. | 02-04-2010 |
| 20100187594 | SEMICONDUCTOR MEMORY AND METHOD OF MANUFACTURING THE SAME - A semiconductor memory includes a semiconductor substrate, a buried insulating film formed on a part of an upper surface of the semiconductor substrate, and a semiconductor layer formed on another part of the upper surface of the semiconductor substrate. Each of the memory cell transistors comprises a first-conductivity-type source region, a first-conductivity-type drain region, and a first-conductivity-type channel region arranged in the semiconductor layer in the column direction, and a gate portion formed on a side surface of the channel region in the row direction. | 07-29-2010 |
| 20100230594 | INFRARED SOLID-STATE IMAGE SENSOR - An infrared solid-state image sensor comprises: a pixel area comprising a sensitive pixel area where infrared detection pixels are arranged in a matrix form to detect incident infrared rays on the semiconductor substrate and a reference pixel area where reference pixels are provided, each of the infrared detection pixels comprising a thermoelectric conversion part, the thermoelectric conversion part comprising an infrared absorption film to absorb the incident infrared rays and convert the incident infrared rays to heat and a first thermoelectric conversion element to convert the heat obtained by the conversion in the infrared absorption film to a electric signal, each of the reference pixels comprising a second thermoelectric conversion element. Each of first ends of the reference pixels are connected to a reference potential line, and a difference between the signal potential read out from a corresponding signal line and a reference potential supplied from the reference potential line is amplified and outputted. | 09-16-2010 |
| 20100231246 | SENSOR APPARATUS FOR DETECTING A POSITIONAL RELATIONSHIP BETWEEN TWO MEMBERS AND METHOD USED FOR THE SENSOR APPARATUS - A sensor apparatus for detecting a positional relationship includes a first electrode, an applying unit applying a charging signal with a first cycle period to the first electrode, a second electrode, a selecting unit selecting the first or second cycle period which have overlapped segment periods, an output unit outputting electrical signals supplied from the second electrode with the first cycle period, if the first cycle period is selected, and parts of the electrical signals during the segment periods, if the second cycle period is selected, a comparator comparing an amplitude of the electrical signals with a threshold value and generating a first or second comparison signal and a controller generating a proximity and non-proximity signal in response to the first and second comparison signal, respectively, so that the selecting unit selects the first and second cycle period in response to the proximity and non-proximity signal, respectively. | 09-16-2010 |
| 20110061449 | ELECTRONIC DEVICE - According to one embodiment, an electronic device includes an airtight container, a functioning unit, and an airtightness detection unit. The airtight container has a containment space capable of being sealed airtightly. The functioning unit is stored in the containment space. The functioning unit is capable of executing a prescribed function. The airtightness detection unit is stored in the containment space. The airtightness detection unit is capable of detecting an airtightness of the containment space. | 03-17-2011 |
| 20110156186 | SOLID-STATE IMAGING DEVICE - Certain embodiments provide a solid-state imaging device including: a plurality of pixels provided on a semiconductor substrate, each of the pixels having a semiconductor region that converts incident light from a side of a first face of the semiconductor substrate into signal charges and stores the signal charges; a readout circuit provided on a side of a second face that is the opposite side from the first face, and reading out the signal charges stored in the pixels; and a pixel separation structure provided between adjacent ones of the pixels in the semiconductor substrate, the pixel separation structure including a stack film buried in a trench extending from the first face, the stack film including a first insulating film provided along side faces and a bottom face of the trench, and a fixed charge film provided in the trench to cover the first insulating film and retaining fixed charges that are non-signal charges. | 06-30-2011 |
