Patent application number | Description | Published |
20080258283 | WIRING BOARD AND SEMICONDUCTOR PACKAGE USING THE SAME - A wiring board has a base insulating film. The base insulating film has a thickness of 20 to 100 μm and is made of a heat-resistant resin which has a glass-transition temperature of 150° C. or higher and which contains reinforcing fibers made of glass or aramid. The base insulating film has the following physical properties (1) to (6) when an elastic modulus at a temperature of T° C. is given as D | 10-23-2008 |
20080303136 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A transparent board is positioned on a support board provided with a positioning mark, and a release material is provided. A semiconductor element is then positioned so that the electrode element faces upward, and the support board is then removed. An insulating resin is then formed on the release material so as to cover the semiconductor element; and a via, a wiring layer, an insulation layer, an external terminal, and a solder resist are then formed. The transparent board is then peeled from the semiconductor device through the use of the release material. A chip can thereby be mounted with high precision, there is no need to provide a positioning mark during mounting of the chip on the substrate in the manufacturing process, and the substrate can easily be removed. As a result, a semiconductor device having high density and a thin profile can be manufactured at low cost. | 12-11-2008 |
20090001604 | Semiconductor Package and Method for Producing Same - An oxide layer and a metal layer composed of a gold- or platinum-group metal are formed in the stated order on a substrate. A wiring body having a wiring layer, insulating layer, via, and electrode is formed on the metal layer. A semiconductor element is then connected as a flip chip via solder balls on the wiring body electrode, and underfill is introduced between the semiconductor element and the wiring body. Subsequently, a sealing resin layer is formed so as to cover the semiconductor element and the surface of the wiring body on which the semiconductor element is mounted, thus producing a semiconductor package. A high-density, detailed, thin semiconductor package can thereby be realized. | 01-01-2009 |
20090026636 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - Semiconductor device has a semiconductor chip embedded in an insulating layer. A semiconductor device comprises a semiconductor chip formed to have external connection pads and a positioning mark that is for via formation; an insulating layer containing a non-photosensitive resin as an ingredient and having a plurality of vias; and wiring electrically connected to the external connection pads through the vias and at least a portion of which is formed on the insulating layer. The insulating layer is formed to have a recess in a portion above the positioning mark. The bottom of the recess is the insulating layer alone. Vias have high positional accuracy relative to the mark. | 01-29-2009 |
20090046441 | WIRING BOARD FOR MOUNTING SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF THE SAME, AND WIRING BOARD ASSEMBLY - A wiring board for mounting semiconductor device, includes at least a dielectric film | 02-19-2009 |
20090315190 | WIRING BOARD, SEMICONDUCTOR DEVICE USING WIRING BOARD AND THEIR MANUFACTURING METHODS - A wiring board has an insulating layer, a plurality of wiring layers formed in such a way as to be insulated from each other by the insulating layer, and a plurality of vias formed in the insulating layer to connect the wiring layers. Of the wiring layers, a surface wiring layer formed in one surface of the insulating layer include a first metal film exposed from the one surface and a second metal film embedded in the insulating layer and stacked on the first metal film. Edges of the first metal film project from edges of the second metal film in the direction in which the second metal film spreads. By designing the shape of the wiring layers embedded in the insulating layer in this manner, it is possible to obtain a highly reliable wiring board that can be effectively prevented from side etching in the manufacturing process and can adapt to miniaturization and highly dense packaging of wires. | 12-24-2009 |
20100103634 | FUNCTIONAL-DEVICE-EMBEDDED CIRCUIT BOARD, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC EQUIPMENT - A circuit board includes a functional device, a circuit board embedding therein the functional device, and first and second conductive-wiring layers formed on the front and rear surfaces of the circuit board to sandwich therebetween the functional device and each include at least one conductor layer. The surface of each of the outermost patterned interconnections of the first conductive-wiring layer is exposed, and the surface of a first dielectric layer isolating the outermost patterned interconnections from one another protrudes from the surface of the each of the patterned interconnections. The patterned interconnections of the second conductive-wiring layer are connected to respective electrode terminals of the functional device, and the surface of a second dielectric layer isolating the electrode terminals from one another is substrate within the same plane as the surface of the electrode terminals disposed adjacent to the second dielectric layer. | 04-29-2010 |
20100232127 | WIRING BOARD COMPOSITE BODY, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE WIRING BOARD COMPOSITE BODY AND THE SEMICONDUCTOR DEVICE - A wiring board composite body includes a supporting substrate, and wiring boards formed on each of the upper and the lower surfaces of the supporting substrate. The supporting substrate includes a supporting body, and a metal body arranged on each of the upper and the lower surfaces of the supporting body. The wiring board comprises at least an insulation layer insulating upper and lower wirings, and a via connecting the upper and the lower wirings. The wiring board mounted on the metal body constitutes a wiring board with the metal body. Thus, the supporting body supporting the metal body is effectively used in a process of forming the wiring board on the metal body, and the wiring board composite body, which has advantageous structural and production characteristics, is provided. A semiconductor device and a method for manufacturing such wiring board composite body and the semiconductor device are also provided. | 09-16-2010 |
20100244231 | SEMICONDUCTOR DEVICE - A semiconductor device comprises: a semiconductor element; a support substrate arranged on a surface of the semiconductor element opposite to a surface thereof provided with a pad, the support substrate being wider in area than the semiconductor element; a burying insulating layer on the support substrate for burying the semiconductor element therein; a fan-out interconnection led out from the pad to an area on the burying insulating layer lying more peripherally outwardly than the semiconductor element; and a reinforcement portion arranged in a preset area on top of outer periphery of the semiconductor element for augmenting the mechanical strength of the burying insulating layer and the fan-out interconnection. | 09-30-2010 |
20100314778 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - In forming a semiconductor device, an insulation layer is formed on top of a semiconductor chip having a plurality of external terminals. A plurality of interconnections is formed on the insulating layer. External terminals are electrically connected to coordinated interconnections through a plurality of vias formed in the insulation layer. The interconnections are each formed integral with a via conduction part which covers the entire surfaces of the bottom and the sidewall sections of the via. The interconnection is formed so as to be narrower in its region overlying the via than the upper via diameter. | 12-16-2010 |
20110003472 | WIRING SUBSTRATE FOR MOUNTING SEMICONDUCTORS, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR PACKAGE - A wiring substrate for mounting semiconductors is provided with an insulation film, wires formed in the insulation film, and a plurality of electrode pads that electrically connect to the wires through vias. The electrode pads are provided to have their surfaces exposed to both of the front surface and the rear surface of the insulation film, and at least a part of the side surface of the electrode pads is buried in the insulation film. The insulation film is formed by forming electrode pads on the respective two metallic plates, thereafter, laminating an insulation layer and wires on the respective metallic plates to cover the electrode pad, and adhering the insulation layers to each other for integration, and thereafter, removing the metallic plates. | 01-06-2011 |
20110121445 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a plural number of interconnects and a plural number of vias are stacked. A semiconductor element is enclosed in an insulation layer. At least one of the vias provided in insulation layers and/or at least one of interconnects provided in the interconnect layers are of cross-sectional shapes different from those of the vias formed in another one of the insulation layers and/or interconnects provided in another one of the interconnect layers. | 05-26-2011 |
20110136298 | METHOD OF MANUFACTURING A WIRING BOARD - A wiring board has an insulating layer, a plurality of wiring layers formed in such a way as to be insulated from each other by the insulating layer, and a plurality of vias formed in the insulating layer to connect the wiring layers. Of the wiring layers, a surface wiring layer formed in one surface of the insulating layer include a first metal film exposed from the one surface and a second metal film embedded in the insulating layer and stacked on the first metal film. Edges of the first metal film project from edges of the second metal film in the direction in which the second metal film spreads. By designing the shape of the wiring layers embedded in the insulating layer in this manner, it is possible to obtain a highly reliable wiring board that can be effectively prevented from side etching in the manufacturing process and can adapt to miniaturization and highly dense packaging of wires. | 06-09-2011 |
20110175213 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes: at least one semiconductor element having electrode terminals; a metal plate supporting the semiconductor element; and a wiring board covering the semiconductor element and including a plurality of insulating layers and wiring layers alternately stacked and external connection terminals on a surface, the wiring layers being electrically connected to each other by vias. The electrode terminals and the external connection terminals are electrically connected via at least one of the wiring layers and the vias. At least one of the electrode terminals, the is wiring layers, and the vias is electrically connected to the metal plate. | 07-21-2011 |
20110281401 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A transparent board is positioned on a support board provided with a positioning mark, and a release material is provided. A semiconductor element is then positioned so that the electrode element faces upward, and the support board is then removed. An insulating resin is then formed on the release material so as to cover the semiconductor element; and a via, a wiring layer, an insulation layer, an external terminal, and a solder resist are then formed. The transparent board is then peeled from the semiconductor device through the use of the release material. A chip can thereby be mounted with high precision, there is no need to provide a positioning mark during mounting of the chip on the substrate in the manufacturing process, and the substrate can easily be removed. As a result, a semiconductor device having high density and a thin profile can be manufactured at low cost. | 11-17-2011 |
20120153501 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In a semiconductor device in which the semiconductor chip including the external terminal(s) is embedded in an insulating layer and interconnect conductor(s) is (are) formed on the insulating layer, base hole(s) is (are) formed at position(s) of the insulating layer corresponding to the external terminal(s) in a state where the semiconductor chip has shrunk after having been embedded in the insulating layer. The interconnect conductor(s) is (are) electrically connected to the external terminal(s) through the base hole(s). | 06-21-2012 |
20120319254 | WIRING BOARD WITH BUILT-IN SEMICONDUCTOR ELEMENT - A wiring board including a built-in semiconductor element includes the semiconductor element, a peripheral insulating layer covering an outer peripheral side surface of the semiconductor element, an upper surface-side wiring provided on an upper surface side of the wiring board, and a lower surface-side wiring provided on a lower surface side of the wiring board. The semiconductor element includes a first wiring structure layer including a first wiring and a first insulating layer alternately provided on a semiconductor substrate, and a second wiring structure layer including a second wiring and a second insulating layer alternately provided on the first wiring structure layer. The upper surface-side wiring includes a wiring electrically connected to the first wiring via the second wiring. The second wiring is thicker than the first wiring and thinner than the upper surface-side wiring. The second insulating layer is formed of a resin material and is thicker than the first insulating layer. | 12-20-2012 |
20130087927 | MULTIMEDIA PROVIDING SERVICE - Provided is a semiconductor device of higher density, thin thickness and low cost not plagued with low reliability ascribable to concentration of internal stress in an ultimate product. The semiconductor device includes a semiconductor element, and a support substrate arranged on a surface of the semiconductor element opposite to its surface provided with a pad. The support substrate is wider in area than the semiconductor element. The semiconductor device also includes a burying insulating layer on the support substrate for burying the semiconductor element in it, and a fan-out interconnection led out from the pad to an area on the burying insulating layer lying more peripherally outwardly than the semiconductor element; and a reinforcement portion arranged in a preset area above the outer periphery of the semiconductor element for augmenting mechanical strength of the burying insulating layer and the fan-out interconnection (FIG. | 04-11-2013 |
20130127037 | SEMICONDUCTOR DEVICE BUILT-IN SUBSTRATE - An object of the present invention is to provide a semiconductor device built-in substrate, which can be made thin and can suppress occurrence of warpage. The present invention provides a semiconductor substrate which is featured by including a first semiconductor device serving as a substrate, a second semiconductor device placed on the circuit surface side of the first semiconductor device in the state where the circuit surfaces of the first and second semiconductor devices are placed to face in the same direction, and an insulating layer incorporating therein the second semiconductor device, and which is featured in that a heat dissipation layer is formed at least between the first semiconductor device and the second semiconductor device, and in that the heat dissipation layer is formed on the first semiconductor device so as to extend up to the outside of the second semiconductor device. | 05-23-2013 |
20140024177 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes: at least one semiconductor element having electrode terminals; a metal plate supporting the semiconductor element; and a wiring board covering the semiconductor element and including a plurality of insulating layers and wiring layers alternately stacked and external connection terminals on a surface, the wiring layers being electrically connected to each other by vias. The electrode terminals and the external connection terminals are electrically connected via at least one of the wiring layers and the vias. At least one of the electrode terminals, the wiring layers, and the vias is electrically connected to the metal plate. | 01-23-2014 |
20140367863 | SEMICONDUCTOR DEVICE - A semiconductor device comprises: a semiconductor element; a support substrate arranged on a surface of the semiconductor element opposite to a surface thereof provided with a pad, the support substrate being wider in area than the semiconductor element; a burying insulating layer on the support substrate for burying the semiconductor element therein; a fan-out interconnection led out from the pad to an area on the burying insulating layer lying more peripherally outwardly than the semiconductor element; and a reinforcement portion arranged in a preset area on top of outer periphery of the semiconductor element for augmenting the mechanical strength of the burying insulating layer and the fan-out interconnection. | 12-18-2014 |