| Patent application number | Description | Published |
|---|
| 20090021536 | DRIVING CIRCUIT OF DISPLAY ELEMENT AND IMAGE DISPLAY APPARATUS - A new driving circuit is provided. The driving circuit according to the present invention comprises a first period for setting a current to be supplied to a display element, a second period for setting a gray-scale of the display element, and a third period for supplying a driving current to the display element. The present invention, in the driving circuit of the display element, is provided with a current source circuit for supplying a constant current to the display element and a control circuit for controlling the time to supply a constant current to the display element from the current source circuit. | 01-22-2009 |
| 20090065771 | FIELD EFFECT TRANSISTOR USING OXIDE FILM FOR CHANNEL AND METHOD OF MANUFACTURING THE SAME - The present invention provides a field effect transistor including an oxide film as a semiconductor layer, wherein the oxide film includes one of a source part and a drain part to which one of hydrogen and deuterium is added. | 03-12-2009 |
| 20090102829 | PIXEL CIRCUIT AND IMAGE DISPLAY APPARATUS HAVING THE PIXEL CIRCUIT - A pixel circuit and an image display apparatus are provided making use of a hysteresis characteristics of a transistor for driving a display element. The pixel circuit comprises: a transistor providing both different first and second relations between a gate voltage value and a drain current value at a transition from off state to an on state, and from the on state transits to the off state respectively; a display element supplied as a drive current with a current controlled by the transistor; and a capacitor element connected to a gate electrode of the transistor. One of the first and second relations is utilized during a first period for setting the drive current to be supplied to the display element. And, the other of the first and second relations is utilized during a second period for supplying the drive current to the display element to effect light emission. | 04-23-2009 |
| 20100051938 | AMORPHOUS OXIDE SEMICONDUCTOR AND THIN FILM TRANSISTOR USING THE SAME - There is provided an amorphous oxide semiconductor including hydrogen and at least one element of indium (In) and zinc (Zn), the amorphous oxide semiconductor containing one of hydrogen atoms and deuterium atoms of 1×10 | 03-04-2010 |
| 20100053041 | PIXEL CIRCUIT, LIGHT EMITTING DISPLAY DEVICE AND DRIVING METHOD THEREOF - A pixel circuit including at least a light emitting element, and a thin film transistor that supplies to the light emitting element a first current controlling a gray scale according to luminance-current characteristics of the light emitting element, wherein the thin film transistor has a back gate electrode, at least a driving period in which the thin film transistor supplies the first current to the light emitting element, and a writing period in which a second current is written to the thin film transistor before the driving period in order to pass the first current to the thin film transistor during the driving period are included, and by changing voltages which are applied to the back gate electrode in the driving period and the writing period, current capability to a gate voltage of the thin film transistor is made to differ. | 03-04-2010 |
| 20100085081 | INVERTER MANUFACTURING METHOD AND INVERTER - To provide an enhancement-depletion (E/D) inverter which can be easily manufactured, in the present invention, a method of manufacturing an inverter which is composed of an oxide semiconductor in which a channel layer includes at least one element selected from In, Ga and Zn formed on a same substrate, the inverter being the E/D inverter having plural thin film transistors, is characterized by comprising the steps of: forming a first transistor and a second transistor, the thicknesses of the channel layers of the first and second transistors being mutually different; and executing heat treatment to at least one of the channel layers of the first and second transistors. | 04-08-2010 |
| 20100090205 | ACTIVE MATRIX DISPLAY APPARATUS - An active matrix display apparatus including a transistor | 04-15-2010 |
| 20100117072 | LIGHT EMITTING APPARATUS AND METHOD OF MANUFACTURING THE SAME - To provide a light emitting apparatus in which high definition can be realized and the connection reliability of a wiring portion is excellent, the light emitting apparatus includes: a substrate; a light emitting element which includes a first electrode, an emission layer, and a second electrode which are stacked on the substrate in the stated order; and a thin film transistor which is of an n-type and includes a channel layer and a drain electrode, the light emitting element and the thin film transistor are arranged in parallel and in contact with the substrate, the channel layer of the thin film transistor has a field effect mobility equal to or larger than 1 cm | 05-13-2010 |
| 20100213459 | THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREFOR, AND DISPLAY APPARATUS USING THE SAME - A transistor is constituted of a gate electrode | 08-26-2010 |
| 20110073856 | THIN FILM TRANSISTOR - To achieve, in an oxide semiconductor thin layer transistor, both the stability of threshold voltage against electric stress and suppression of variation in the threshold voltage in a transfer characteristic. A thin film transistor includes an oxide semiconductor layer and a gate insulating layer disposed so as to be in contact with the oxide semiconductor layer, wherein the oxide semiconductor layer contains hydrogen atoms and includes at least two regions that function as active layers of the oxide semiconductor and have different average hydrogen concentrations in the layer thickness direction; and when the regions functioning as the active layers of the oxide semiconductor are sequentially defined as, from the side of the gate insulating layer, a first region and a second region, the average hydrogen concentration of the first region is lower than the average hydrogen concentration of the second region. | 03-31-2011 |
| 20110092016 | METHOD OF TREATING SEMICONDUCTOR ELEMENT - In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 10 | 04-21-2011 |
| 20110101346 | LIGHT EMITTING DISPLAY APPARATUS - There is provided a light emitting display apparatus including at least a light emitting element and a thin film transistor (TFT) for driving the light emitting element, characterized in that a mechanism is provided in which a semiconductor constituting the TFT is irradiated with at least a part of light whose wavelength is longer than a predetermined wavelength among the light emitted by the light emitting element. | 05-05-2011 |
