Inventors list

Assignees list

Classification tree browser

Top 100 Inventors

Top 100 Assignees


Hidetoshi Nishiyama

Hidetoshi Nishiyama, Yokohama JP

Patent application numberDescriptionPublished
20090033924Defects Inspecting Apparatus And Defects Inspecting Method - An inspecting apparatus and method including first and second illuminating units for illuminating a surface of a specimen to be inspected with different incident angles and first and second detecting optical units arranged at different elevation angle directions to the surface of the specimen for detecting images of the specimen illuminated by the first and second illuminating units.02-05-2009
20100259751DEFECTS INSPECTING APPARATUS AND DEFECTS INSPECTING METHOD - An inspecting apparatus and method including first and second illuminating units for illuminating a surface of a specimen to be inspected with different incident angles and first and second detecting optical units arranged at different elevation angle directions to the surface of the specimen for detecting images of the specimen illuminated by the first and second illuminating units.10-14-2010

Patent applications by Hidetoshi Nishiyama, Yokohama JP

Hidetoshi Nishiyama, Fujisawa JP

Patent application numberDescriptionPublished
20080225286Method And Apparatus For Detecting Defects - A defect inspection method and apparatus that can easily and quickly determine, from among a plurality of inspection conditions, a condition that allows for an inspection with high sensitivity. The inspection apparatus has a variety of optical functions to cover a variety of kinds of defects to be inspected (shape, material, nearby pattern, etc.). For each optical function, grayscale depths of defects that the operator wants detected and of pseudo defects that he or she wants undetected are accumulated for future use, so that conditions conducive to a higher sensitivity and a lower pseudo defect detection rate can be selected efficiently. Conditions that can be selected for optical systems include a bright-field illumination, a dark-field illumination and a bright-/dark-field composite illumination, illumination wavelength bands, polarization filters and spatial filters.09-18-2008
20080246964Method and Its Apparatus for Inspecting Particles or Defects of a Semiconductor Device - Conventionally, a particle/defect inspection apparatus outputs a total number of detected particles/defects as the result of detection. For taking countermeasures to failures in manufacturing processes, the particles/defects detected by the inspection apparatus are analyzed. Since the inspection apparatus outputs a large number of detected particles/defects, an immense time is required for analyzing the detected particles/defects, resulting in a delay in taking countermeasures to a failure in the manufacturing processes. In the present invention, an apparatus for optically inspecting particles or defects relates a particle or defect size to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result. A failure analysis is conducted by setting a threshold for identifying a failure in each of regions on a semiconductor device or the like to statistically evaluate detected particles.10-09-2008
20080291437 METHOD OF INSPECTING A SEMICONDUCTOR DEVICE AND AN APPARATUS THEREOF - A method and apparatus of inspecting a sample, in which the sample is inspected under a plurality of inspection conditions, and inspection data obtained by inspecting the sample under each of the plurality of inspection conditions and position information on the sample of the inspection date in correspondence with the respective inspection conditions, are stored. The inspection data for each of the plurality of inspection conditions is against each other by the use of the position information on the sample to determine a position to be inspected in detail, and an image of the sample at a position to be inspected in detail is obtained. The obtained image is classified, the inspection condition of the sample by the use of information of classification of the image is determined.11-27-2008
20090177413System For Monitoring Foreign Particles, Process Processing Apparatus And Method Of Electronic Commerce - A system for monitoring foreign matter includes a manufacturing line having plural process processing apparatuses, a production management system which manages the processing of workpieces in the manufacturing line, plural optical heads which monitor foreign matter in relation to at least one of the workpieces, and which provide an output signal indicative thereof, and at least one image signal processing unit provided in a lesser number than a number of the plural optical heads for processing the output signal therefrom.07-09-2009
20090323054METHOD FOR INSPECTING DEFECT AND APPARATUS FOR INSPECTING DEFECT - The present invention is an apparatus for inspecting foreign particles/defects, comprises an illumination optical system, a detection optical system, a shielding unit which is provided in said detection optical system to selectively shield diffracted light pattern coming from circuit pattern existing on an inspection object and an arithmetic processing system, wherein said shielding unit comprises a micro-mirror array device or a reflected type liquid crystal, or a transmission type liquid crystal, or an object which is transferred a shielding pattern to an optical transparent substrate, or a substrate or a film which is etched so as to leave shielding patterns, or an optical transparent substrate which can be changed in transmission by heating, sudden cold, or light illumination, or change of electric field or magnetic field, or a shielding plate of cylindrical shape or plate shape.12-31-2009
20100053319Method and apparatus for pattern inspection - According to the present invention, for a pattern inspection apparatus that compares images in corresponding areas of two patterns that are identical and that determines an unmatched portion between the images is a defect, a plurality of detection systems and a plurality of corresponding image comparison methods are provided. With this configuration, the affect of uneven brightnesses for a pattern that occurs due to differences in film thicknesses can be reduced, a highly sensitive pattern inspection can be performed, a variety of defects can be revealed, and the pattern inspection apparatus can be applied for processing performed within a wide range. Furthermore, the pattern inspection apparatus also includes a unit for converting the tone of image signals of comparison images for a plurality of different processing units, and when a difference in brightness occurs in the same pattern of the images, a defect can be correctly detected.03-04-2010
20100140474METHOD OF INSPECTING A SEMICONDUCTOR DEVICE AND AN APPARATUS THEREOF - A method and apparatus of inspecting a sample, in which the sample is inspected under a plurality of inspection conditions, and inspection data obtained by inspecting the sample under each of the plurality of inspection conditions and position information on the sample of the inspection date in correspondence with the respective inspection conditions, are stored. The inspection data for each of the plurality of inspection conditions is against each other by the use of the position information on the sample to determine a position to be inspected in detail, and an image of the sample at a position to be inspected in detail is obtained. The obtained image is classified, the inspection condition of the sample by the use of information of classification of the image is determined.06-10-2010

Patent applications by Hidetoshi Nishiyama, Fujisawa JP

Hidetoshi Nishiyama, Fujisawa-Shi JP

Patent application numberDescriptionPublished
20100088042Apparatus And Method For Testing Defects - An apparatus and method for detecting defects on a specimen includes an illumination optical unit which obliquely projects a laser focused onto a line on a surface of the specimen, a table unit which mounts the specimen and which is movable, a detection optical unit which detects with an image sensor an image of light formed by light reflected from the specimen and passed through a filter which blocks diffraction light resulting from patterns formed on the specimen, a signal processor which processes a signal outputted from the image sensor of the detection optical unit to extract defects of the specimen, and a display unit which displays information of defects extracted by the signal processor. The filter is adjustable.04-08-2010

Patent applications by Hidetoshi Nishiyama, Fujisawa-Shi JP

Hidetoshi Nishiyama, Higashiyamato JP

Patent application numberDescriptionPublished
20090184255INSPECTION METHOD AND INSPECTION SYSTEM USING CHARGED PARTICLE BEAM - In an electric immersion lens having high resolution capability, secondary electrons generated from a specimen are accelerated to suppress the dependency of rotational action of the secondary electrons applied thereto by an objective lens upon energy levels of the secondary electrons and when selectively detecting low and high angle components of elevation and azimuth as viewed from a secondary electron generation site by means of an annular detector interposed between an electron source and the objective lens, the secondary electrons are adjusted and deflected by means of an E×B deflector such that the center axis of secondary electrons converged finely under acceleration is made to be coincident with the center axis of a low elevation signal detection system and the secondary electrons are deviated from an aperture of a high elevation signal detection system.07-23-2009
20090194690Inspection Method And Inspection System Using Charged Particle Beam - An electron beam system includes a sample holder to hold a sample, electron optics to obtain an image of the sample, an electrode to control a charged state of the sample, a monitor to determine a range of voltage applied to the electrode, and a processing unit to obtain plural images of different charged states of the sample in accordance with a change of the applied to the electrode and to determine voltage from the voltage contrasts of the images.08-06-2009

Patent applications by Hidetoshi Nishiyama, Higashiyamato JP

Hidetoshi Nishiyama, Kokubunji JP

Patent application numberDescriptionPublished
20090189075INSPECTION METHOD AND INSPECTION SYSTEM USING CHARGED PARTICLE BEAM - Secondary electrons and back scattered electrons generated by irradiating a wafer to be inspected such as a semiconductor wafer with a charged particle beam are detected by a detector. A signal proportional to the number of detected electrons is generated, and an inspection image is formed on the basis of the signal. On the other hand, in consideration of a current value and irradiation energy of a charged particle beam, an electric field on the surface of the inspection wafer, emission efficiency of the secondary electrons and back scattered electrons, and the like, an electric resistance and an electric capacitance are determined so as to coincide with those in the inspection image. In a state where a difference between a resistance value in a normal portion and a resistance value in a defective portion is sufficiently increased by using the charging generated by the irradiation of electron beams, an inspection is conducted to thereby detect a defect.07-30-2009

Hidetoshi Nishiyama, Miyagi JP

Patent application numberDescriptionPublished
20090061079EVAPORATION APPARATUS, METHOD OF MANUFACTURING ANODE USING SAME, AND METHOD OF MANUFACTURING BATTERY USING SAME - An evaporation apparatus that is capable of stably forming a good quality thin film and is highly suitable for mass production is provided. The evaporation apparatus include an evaporation source discharging an evaporation material by heating, a retention member retaining an evaporation object, and a heat shield member that is located between the evaporation source and the evaporation object retained by the retention member, has an opening for passing the evaporation material in a state of vapor phase from the evaporation source to the evaporation object, and shields the evaporation object from part of radiation heat of the evaporation source. The heat shield member is located closer to the evaporation source than to the retention member.03-05-2009