| Patent application number | Description | Published |
|---|
| 20080211567 | BIDIRECTIONAL SWITCH AND METHOD FOR DRIVING THE SAME - A bidirectional switch includes a field-effect transistor having a first ohmic electrode, a second ohmic electrode and a gate electrode, and a control circuit for controlling between a conduction state and a cut-off state by applying a bias voltage to the gate electrode. The control circuit applies the bias voltage from the first ohmic electrode as a reference when a potential of the second ohmic electrode is higher than the potential of the first ohmic electrode, and applies the bias voltage from the second ohmic electrode as a reference when the potential of the second electrode is lower than the potential of the first ohmic electrode. | 09-04-2008 |
| 20080303162 | SEMICONDUCTOR DEVICE - A semiconductor device includes a layered structure including a first nitride semiconductor layer and a second nitride semiconductor layer that are sequentially formed over a substrate in this order. The second nitride semiconductor layer has a wider bandgap than the first nitride semiconductor layer. A first electrode and a second electrode are formed spaced apart from each other on the layered structure. A first insulating layer with a high breakdown field is formed in a region with electric field concentration between the first electrode and the second electrode over the layered structure. The first insulating layer has a higher breakdown field than air. | 12-11-2008 |
| 20090078943 | NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A nitride semiconductor device mainly made of a nitride semiconductor material having excellent heat dissipation characteristics and great crystallinity and a method for manufacturing thereof are provided. The method for manufacturing the nitride semiconductor includes vapor-depositing a diamond layer on a silicon substrate, bonding an SOI substrate on a surface of the diamond layer, thinning the SOI substrate, epitaxially growing an GaN layer on the thinned SOI substrate, removing the silicon substrate, and bonding, on a rear-surface of the diamond layer, a material having a thermal conductivity greater than a thermal conductivity of the silicon substrate. The SOI substrate has an outermost surface layer and a silicon oxide layer. In the thinning, the SOI substrate is thinned by selectively removed through the silicon oxide layer, so that only the outermost surface layer is left. | 03-26-2009 |
| 20090114948 | SEMICONDUCTOR DEVICE - To provide a semiconductor device that has a sufficiently low on-resistance and excellent low-capacitance and high-speed characteristics as compared with conventional GaN-based diodes. The semiconductor device includes: a substrate ( | 05-07-2009 |
| 20100090250 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor layer; at least one electrode formed on a semiconductor layer to be in contact with the semiconductor layer; and a passivation film covering the semiconductor layer and at least part of the top surface of the electrode to protect the semiconductor layer and formed of a plurality of sub-films. The passivation film includes a first sub-film made of aluminum nitride. | 04-15-2010 |
| 20100097105 | SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME - A semiconductor device includes a semiconductor layer stack | 04-22-2010 |
| 20100321363 | PLASMA DISPLAY PANEL DRIVING DEVICE AND PLASMA DISPLAY - A plasma display panel driving device includes an electrode driving unit for generating a drive pulse to be applied to an electrode of a plasma display panel. The electrode driving unit has a plurality of switches. At least one of the plurality of switches is a switch device including a dual-gate semiconductor device. The dual-gate semiconductor device | 12-23-2010 |
| 20110095335 | NITRIDE SEMICONDUCTOR DEVICE - A high breakdown voltage GaN-based transistor is provided on a silicon substrate. A nitride semiconductor device including: a silicon substrate, a SiO | 04-28-2011 |
