| Patent application number | Description | Published |
| 20100073137 | SEMICONDUCTOR DEVICE - To provide a semiconductor device which can transmit/receive data to/from a reader/writer without interruption of operation by the reader/writer or the like. A semiconductor device capable of wireless communication includes an antenna circuit, a first demodulation signal generation circuit which demodulates a signal whose modulation factor is from 95% to 100%, both inclusive, a second demodulation signal generation circuit which demodulates a signal whose modulation factor is from 95% and 100%, both inclusive and from 10% and 30%, both inclusive and a logic circuit which selects one of a demodulation signal from the first circuit and a demodulation signal from the second circuit. When the antenna circuit receives an electromagnetic wave, the logic circuit selects the demodulation signal from the second circuit, and when the antenna circuit transmits an electromagnetic wave, the logic circuit selects the demodulation signal from the first circuit. | 03-25-2010 |
| 20100083207 | System for Designing Functional Circuit and Method for Designing Functional Circuit - A hierarchizing means | 04-01-2010 |
| 20110055463 | SEMICONDUCTOR DEVICE AND DRIVING METHOD THE SAME - It is an object to prevent miswriting by radio in a relatively easy way in a semiconductor device which is capable of data communication (reception/transmission) through wireless communication, in particular, in an RFID tag provided with an OTP memory or a write-once memory. Alternatively, it is an object to prevent data from being tampered. Further alternatively, it is an object to inhibit access to a memory in a relatively easy way and to inhibit reading of data in a semiconductor device which is capable of data communication (reception/transmission) through wireless communication. In a semiconductor device including a control circuit and an OTP memory, a memory includes at least a sector for preventing additional writing and an information sector. When data for preventing additional writing is written to the sector for preventing additional writing and information is written to the information sector which is electrically connected to the sector for preventing additional writing, additional writing to the information sector to which the information is written is impossible. | 03-03-2011 |
| 20110079650 | SEMICONDUCTOR DEVICE HAVING WIRELESS COMMUNICATION FUNCTION - A semiconductor device includes a memory portion, a logic portion, and a plurality of signal lines for electrically connecting the memory portion and the logic portion. In the case where a transfer rate between the semiconductor device and a communication device is α [bps], a first clock frequency generated in the logic portion is Kα [Hz] (K is an integer of 1 or more), the number of reading signal lines of the plurality of signal lines is n (n is an integer of 2 or more), and a second clock frequency generated in the logic portion is Lα/n [Hz] (L is any integer satisfying L/n| 04-07-2011 | |
| 20110102018 | LOGIC CIRCUIT AND SEMICONDUCTOR DEVICE - In a logic circuit where clock gating is performed, the standby power is reduced or malfunction is suppressed. The logic circuit includes a transistor which is in an off state where a potential difference exists between a source terminal and a drain terminal over a period during which a clock signal is not supplied. A channel formation region of the transistor is formed using an oxide semiconductor in which the hydrogen concentration is reduced. Specifically, the hydrogen concentration of the oxide semiconductor is 5x10 | 05-05-2011 |
| Patent application number | Description | Published |
| 20080296770 | Semiconductor device - A semiconductor device of the present invention includes a semiconductor substrate; a diffusion layer formed about a surface of the semiconductor substrate; a first conductive layer formed on the semiconductor substrate, and an insulating layer formed on the semiconductor substrate after the first conductive layer and the diffusion layer are formed, and a second conductive layer formed on the insulating layer, and a first contact formed in the insulating layer, connecting the first conductive layer to the second conductive layer, and a second contact formed in the insulating layer, connecting the first conductive layer to the diffusion layer. In addition, a part of the diffusion layer extends to a lower portion of the first contact. | 12-04-2008 |
| 20110207290 | SEMICONDUCTOR DEVICE FABRICATION METHOD - A semiconductor device fabrication method deposits a dielectric stress-canceling film on oxide films formed on the surfaces of a semiconductor substrate and its isolation trenches, and partly etches the dielectric stress-canceling film to leave a dielectric base film inside each trench and a dielectric top film outside each trench. The trenches are then filled with a dielectric layer that covers the dielectric top and base films, the upper part of this dielectric layer is removed to expose the dielectric top films, and the dielectric top films are selectively etched, using the trench-filling dielectric layer as an etching mask. In the resulting trench isolation structure, the trenches are completely filled with dielectric material, and stress exerted by the oxide films in the trenches during heat treatment is canceled by opposing stress exerted by the dielectric base films. | 08-25-2011 |
| Patent application number | Description | Published |
| 20090072498 | ALUMINA-SILICA-BASED FIBER, CERAMIC FIBER, CERAMIC FIBER COMPLEX, RETAINING SEAL MATERIAL, PRODUCTION METHOD THEREOF, AND ALUMINA FIBER COMPLEX PRODUCTION METHOD - A manufacturing method by which alumina-silica based fibers excellent in mechanical strength can be readily and securely obtained. The method obtains precursor fibers as a material by using an alumina-silica based fiber spinning stock solution for use in an inorganic salt method. Next, the precursor fibers are heated under an environment which makes it difficult to carry out an oxidizing reaction on the carbon component contained in the precursor fibers. Thus, the precursor fibers are sintered to obtain alumina-silica based fibers. | 03-19-2009 |
| 20090075812 | ALUMINA-SILICA-BASED FIBER, CERAMIC FIBER, CERAMIC FIBER COMPLEX, RETAINING SEAL MATERIAL, PRODUCTION METHOD THEREOF, AND ALUMINA FIBER COMPLEX PRODUCTION METHOD - A manufacturing method by which alumina-silica based fibers excellent in mechanical strength can be readily and securely obtained. The method obtains precursor fibers as a material by using an alumina-silica based fiber spinning stock solution for use in an inorganic salt method. Next, the precursor fibers are heated under an environment which makes it difficult to carry out an oxidizing reaction on the carbon component contained in the precursor fibers. Thus, the precursor fibers are sintered to obtain alumina-silica based fibers. | 03-19-2009 |
| 20090081442 | ALUMINA-SILICA-BASED FIBER, CERAMIC FIBER, CERAMIC FIBER COMPLEX, RETAINING SEAL MATERIAL, PRODUCTION METHOD THEREOF, AND ALUMINA FIBER COMPLEX PRODUCTION METHOD - A manufacturing method by which alumina-silica based fibers excellent in mechanical strength can be readily and securely obtained. The method obtains precursor fibers as a material by using an alumina-silica based fiber spinning stock solution for use in an inorganic salt method. Next, the precursor fibers are heated under an environment which makes it difficult to carry out an oxidizing reaction on the carbon component contained in the precursor fibers. Thus, the precursor fibers are sintered to obtain alumina-silica based fibers. | 03-26-2009 |
| 20090143217 | ALUMINA-SILICA-BASED FIBER, CERAMIC FIBER, CERAMIC FIBER COMPLEX, RETAINING SEAL MATERIAL, PRODUCTION METHOD THEREOF, AND ALUMINA FIBER COMPLEX PRODUCTION METHOD - A manufacturing method by which alumina-silica based fibers excellent in mechanical strength can be readily and securely obtained. The method obtains precursor fibers as a material by using an alumina-silica based fiber spinning stock solution for use in an inorganic salt method. Next, the precursor fibers are heated under an environment which makes it difficult to carry out an oxidizing reaction on the carbon component contained in the precursor fibers. Thus, the precursor fibers are sintered to obtain alumina-silica based fibers. | 06-04-2009 |