| Patent application number | Description | Published |
|---|
| 20080225622 | SEMICONDUCTOR MEMORY DEVICE, OPERATIONAL PROCESSING DEVICE AND STORAGE SYSTEM - A thin film magnetic memory includes a size-variable Read Only Memory (ROM) region and a size-variable Random Access Memory (RAM) coupled to different ports for parallel access to the ports, respectively. A memory system allowing fast and efficient data transfer can be achieved. | 09-18-2008 |
| 20080239795 | NONVOLATILE MEMORY DEVICE WITH WRITE ERROR SUPPRESSED IN READING DATA - A data write current from a pinned layer to a free layer is larger than a data write current from the free layer to the pinned layer. A data read current is smaller in value than the data write current. In the case where a difference in data read current between a high-resistance state and a low-resistance state is relatively small, a sense amplifier is connected so that the data read current flows from the pinned layer to the free layer, namely from a source line to a bit line. | 10-02-2008 |
| 20080316798 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A path routing from a write current source supplying a write current through an internal data line, a bit line and a source line to a reference potential except a memory cell is configured to have a constant resistance independent of a memory cell position selected in a memory array, and each of the resistance value of the current path between the memory cell and the write current source and the resistance value of the current path between the selected memory cell and the reference potential node is set to 500Ω or lower. A nonvolatile semiconductor memory device having improved reliability of data read/write is achieved. | 12-25-2008 |
| 20090316499 | Semiconductor memory device operational processing device and storage system - A thin film magnetic memory includes a size-variable Read Only Memory (ROM) region and a size-variable Random Access Memory (RAM) coupled to different ports for parallel access to the ports, respectively. A memory system allowing fast and efficient data transfer can be achieved. | 12-24-2009 |
| 20100091557 | MAGNETIC RANDOM ACCESS MEMORY HAVING IMPROVED READ DISTURB SUPPRESSION AND THERMAL DISTURBANCE RESISTANCE - Between the value of an electric current and the supply duration for which the electric current is supplied that cause magnetization reversal, there is the relation of monotonous decrease. This means that, as the supply duration is shortened, the threshold current value for causing the magnetization reversal is larger. Therefore, in terms of suppressing occurrence of read disturb, the read current supply duration may be shortened to increase the threshold value of the current causing the magnetization reversal and thereby ensure a sufficient read disturb margin. Therefore, the read current supply duration may be shortened relative to the write current supply duration ensure the read disturb margin and suppress occurrence of read disturb. | 04-15-2010 |
| 20100107656 | DEHUMIDIFIER/HUMIDIFIER FOR VEHICLE - A dehumidifier/humidifier for vehicle comprising a casing as air flow channel and, accommodated therein in sequence, first air blower ( | 05-06-2010 |
| 20100107673 | DEHUMIDIFICATION/HUMIDIFICATION DEVICE FOR VEHICLE - In a dehumidification/humidification device, a blower ( | 05-06-2010 |
