Patent application number | Description | Published |
20100246252 | NONVOLATILE SOLID STATE MAGNETIC MEMORY AND RECORDING METHOD THEREOF - A nonvolatile solid state magnetic memory with a ultra-low power consumption and a recording method thereof, the memory including a magnetic material having a magnetic anisotropy that can be changed by increasing or decreasing a carrier concentration, wherein a direction of an easy axis of magnetization, in which the magnetization is oriented easily, is controlled by increasing or decreasing the carrier concentration. The nonvolatile solid state magnetic memory including a recording layer of a magnetic material, and a recording method thereof, in which a carrier (electron or hole) concentration in the recording layer is increased and/or decreased, whereby the magnetization is rotated or reversed and the recording operation is performed. | 09-30-2010 |
20130288398 | METHOD OF MANUFACTURING TUNNELING MAGNETORESISTIVE ELEMENT - [Object] To provide a method of manufacturing a perpendicular magnetization-type magnetic element, which does not need a step of depositing MgO. | 10-31-2013 |
20140097509 | MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY - A disclosed magnetic memory element includes: a magnetization free layer formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a response layer provided so as to be opposed to the magnetization free layer and formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a non-magnetic layer provided so as to be opposed to the response layer on a side opposite to the magnetization free layer and formed of a non-magnetic substance; and a reference layer provided so as to be opposed to the non-magnetic layer on a side opposite to the response layer and formed of a ferromagnetic substance having perpendicular magnetic anisotropy. The magnetization free layer includes a first magnetization fixed region and a second magnetization fixed region which have magnetization fixed in directions antiparallel to each other, and a magnetization free region in which a magnetization direction is variable. | 04-10-2014 |
20140340961 | TUNNEL MAGNETORESISTIVE EFFECT ELEMENT AND RANDOM ACCESS MEMORY USING SAME - Provided is a tunnel magnetoresistive effect element such that a high TMR ratio and a low write current can be realized, and the thermal stability factor (E/k | 11-20-2014 |
20150138877 | NONVOLATILE LOGIC GATE DEVICE - A nonvolatile logic gate device is configured to include a resistive network of a memory structure in which at least three nonvolatile resistive elements are connected, a reference resistive network as a reference resistance providing a tolerance of the memory structure to a resistance value of the resistive network of the memory structure, a writing part operable to selectively write or rewrite a value of each of the nonvolatile resistive elements in the resistive network into a maximum or a minimum corresponding to a logical value to be read when data are stored into the resistive network, and a logic circuit structure operable to use, as a logical value of the memory structure, a value obtained by comparison between the resistance value of the resistive network and the resistance value of the reference resistive network. | 05-21-2015 |
20150200354 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device includes: a first magnetic layer ( | 07-16-2015 |
20150235703 | NONVOLATILE CONTENT ADDRESSABLE MEMORY AND METHOD FOR OPERATING SAME - Provided is a nonvolatile content addressable memory. Each word circuit includes a plurality of segments having an order relation. Each of the segments includes one or more memory cells. Each of the memory cells includes a nonvolatile storage element. Each of the segments includes a power switch for turning on/off a power of a memory cell of the segment. During stand-by, all the power switches are turned off, and, in search operation, the power switch is turned on as necessary for each of the segments. | 08-20-2015 |
20150248939 | MAGNETIC-DOMAIN-WALL-DISPLACEMENT MEMORY CELL AND INITIALIZING METHOD THEREFOR - Provided is a magnetic domain wall displacement memory cell, including a recording layer including a magnetic film, the recording layer including: a magnetization reversal region in which magnetization is reversible; and first and second magnetization fixed regions that supply a spin-polarized electron to the magnetization reversal region. The magnetic domain wall displacement memory cell is configured so that a first region in which magnetization reversal occurs due to a first current flowing in a direction parallel to a film surface of the recording layer and a first magnetic field component in the direction parallel to the film surface of the recording layer is formed, and a second region in which no magnetization reversal occurs is formed. | 09-03-2015 |