Patent application number | Description | Published |
20100246252 | NONVOLATILE SOLID STATE MAGNETIC MEMORY AND RECORDING METHOD THEREOF - A nonvolatile solid state magnetic memory with a ultra-low power consumption and a recording method thereof, the memory including a magnetic material having a magnetic anisotropy that can be changed by increasing or decreasing a carrier concentration, wherein a direction of an easy axis of magnetization, in which the magnetization is oriented easily, is controlled by increasing or decreasing the carrier concentration. The nonvolatile solid state magnetic memory including a recording layer of a magnetic material, and a recording method thereof, in which a carrier (electron or hole) concentration in the recording layer is increased and/or decreased, whereby the magnetization is rotated or reversed and the recording operation is performed. | 09-30-2010 |
20130288398 | METHOD OF MANUFACTURING TUNNELING MAGNETORESISTIVE ELEMENT - [Object] To provide a method of manufacturing a perpendicular magnetization-type magnetic element, which does not need a step of depositing MgO. | 10-31-2013 |
20140097509 | MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY - A disclosed magnetic memory element includes: a magnetization free layer formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a response layer provided so as to be opposed to the magnetization free layer and formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a non-magnetic layer provided so as to be opposed to the response layer on a side opposite to the magnetization free layer and formed of a non-magnetic substance; and a reference layer provided so as to be opposed to the non-magnetic layer on a side opposite to the response layer and formed of a ferromagnetic substance having perpendicular magnetic anisotropy. The magnetization free layer includes a first magnetization fixed region and a second magnetization fixed region which have magnetization fixed in directions antiparallel to each other, and a magnetization free region in which a magnetization direction is variable. | 04-10-2014 |
20140340961 | TUNNEL MAGNETORESISTIVE EFFECT ELEMENT AND RANDOM ACCESS MEMORY USING SAME - Provided is a tunnel magnetoresistive effect element such that a high TMR ratio and a low write current can be realized, and the thermal stability factor (E/k | 11-20-2014 |
Patent application number | Description | Published |
20100044702 | SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE INCLUDING SAME - A thin-film transistor ( | 02-25-2010 |
20110175090 | SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE - In a thin film transistor, a gate insulating layer is formed on a gate electrode formed on an insulating substrate. Formed on the gate insulating layer is a semiconductor layer. Formed on the semiconductor layer are a source electrode and a drain electrode. A protective layer covers them, so that the semiconductor layer is blocked from an atmosphere. The semiconductor layer (active layer) is made of, e.g., a semiconductor containing polycrystalline ZnO to which, e.g., a group V element is added. This allows practical use of a semiconductor device which has an active layer made of zinc oxide and which includes an protective layer for blocking the active layer from an atmosphere. | 07-21-2011 |
20120132908 | SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE - In a thin film transistor, a gate insulating layer is formed on a gate electrode formed on an insulating substrate. Formed on the gate insulating layer is a semiconductor layer. Formed on the semiconductor layer are a source electrode and a drain electrode. A protective layer covers them, so that the semiconductor layer is blocked from an atmosphere. The semiconductor layer (active layer) is made of, e.g., a semiconductor containing polycrystalline ZnO to which, e.g., a group V element is added. This allows practical use of a semiconductor device which has an active layer made of zinc oxide and which includes an protective layer for blocking the active layer from an atmosphere. | 05-31-2012 |
20140355330 | INTEGRATED CIRCUIT - An integrated circuit that does not involve increase in power consumption or decrease in switching probability that occur when a latch circuit using STT-MTJ device, etc. of the prior art is operated at high speed is provided. The integrated circuit | 12-04-2014 |
Patent application number | Description | Published |
20090096045 | MAGNETORESISTIVE DEVICE AND NONVOLATILE MAGNETIC MEMORY EQUIPPED WITH THE SAME - A fast and very low-power-consuming nonvolatile memory. A nonvolatile magnetic memory includes a high-output tunnel magnetoresistive device, in which spin-transfer torque is used for writing. A tunnel magnetoresistive device has a structure such that a ferromagnetic film of a body-centered cubic structure containing Co, Fe, and B, a MgO insulator film of a rock-salt structure oriented in (100), and a ferromagnetic film are stacked. | 04-16-2009 |
20090166773 | Magnetic memory cell and magnetic random access memory - Provided is a reliable nonvolatile memory with a lower power consumption. A ferromagnetic interconnection which is magnetized antiparallel or parallel to a magnetization direction of a ferromagnetic pinned layer in a giant magnetoresistive device or a tunnel magnetoresistive device constituting the magnetic memory cell, is connected to a ferromagnetic free layer with a non-magnetic layer being interposed in between, the ferromagnetic free layer serving as a recording layer. Thereby, the magnetization of the recording layer is switched by use of a spin transfer torque. | 07-02-2009 |
20100034014 | Magnetoresistive Element, Magnetic Memory Cell and Magnetic Random Access Memory Using the Same - Provided is a high-speed and ultra-low-power-consumption nonvolatile memory having a high temperature stability at a zero magnetic field. In a tunnel magnetoresistive film constituting a nonvolatile magnetic memory that employs a writing method using a spin-transfer torque, an insulating layer and a nonmagnetic conductive layer are stacked above a ferromagnetic free layer. | 02-11-2010 |
20120320666 | Magnetoresistive Element and Magnetic Memory - There is provided a magnetoresistive element whose magnetization direction is stable in a direction perpendicular to the film surface and whose magnetoresistance ratio is controlled, as well as magnetic memory using such a magnetoresistive element. By having the material of a ferromagnetic layer forming the magnetoresistive element comprise a ferromagnetic material containing at least one type of | 12-20-2012 |
20130028013 | MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY CELL USING SAME, AND RANDOM ACCESS MEMORY - Provided is a magnetoresistive effect element which uses a perpendicularly magnetized material and has a high TMR ratio. Intermediate layers | 01-31-2013 |
20130058156 | MAGNETIC MEMORY CELL AND MAGNETIC RANDOM ACCESS MEMORY - A relation between a drive current of a selection transistor of a magnetic memory and a threshold magnetization switching current of the magnetoresistance effect element is optimized. In order to optimize the relation between the drive current of the selection transistor and the threshold magnetization switching current of the magnetoresistance effect element | 03-07-2013 |
20130094284 | MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY - Provided are a magneto resistive effect element with a stable magnetization direction perpendicular to a film plane and with a controlled magnetoresistance ratio, and a magnetic memory using the magneto resistive effect element. Ferromagnetic layers | 04-18-2013 |
20130107616 | MAGNETORESISTIVE EFFECT ELEMENT AND RANDOM ACCESS MEMORY USING SAME | 05-02-2013 |
20130141966 | MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY - Provided are a magnetoresistance effect element with a stable magnetization direction perpendicular to film plane and a controlled magnetoresistance ratio, in which writing can be performed by magnetic domain wall motion, and a magnetic memory including the magnetoresistance effect element. The magnetoresistance ratio is controlled by forming a ferromagnetic layer of the magnetoresistance effect element from a ferromagnetic material including at least one type of 3d transition metal or a Heusler alloy. The magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane by controlling the film thickness of the ferromagnetic layer on an atomic layer level. | 06-06-2013 |
20140205862 | Magnetoresistance Effect Element and Magnetic Memory - Provided are a magneto resistive effect element with a stable magnetization direction perpendicular to a film plane and with a controlled magnetoresistance ratio, and a magnetic memory using the magneto resistive effect element. Ferromagnetic layers | 07-24-2014 |