| Patent application number | Description | Published |
|---|
| 20090057803 | SOLID-STATE IMAGING DEVICE, CAMERA AND METHOD OF PRODUCING THE SOLID-STATE IMAGE DEVICE - A solid-state imaging device in which a first conductive type epitaxial layer is formed on its first surface with an interconnection layer and light is received at a second surface of said epitaxial layer, the solid-state imaging device including: (a) a second conductive type region formed in said epitaxial layer with a first impurity concentration and storing a charge generated by a photoelectrical conversion, and (b) a first conductive type impurity layer formed closer to said second surface side of said epitaxial layer than said second conductive type region and having a second impurity concentration higher than the first impurity concentration; wherein the second impurity concentration has a concentration gradient increasing toward the second surface side. | 03-05-2009 |
| 20090262228 | SOLID-STATE IMAGING DEVICE, METHOD OF PRODUCING THE SAME, AND CAMERA - The prevent invention is to provide a solid-state imaging device having a electrode configuration applicable to a progressive scan, and able to reduce a obstruction of incident light at the periphery of a light receiving portion, a method of producing the same, a camera including the same. A first transfer electrode, a second transfer electrode, and a third transfer electrode which have a single layer transfer electrode configuration are repeatedly arranged in a vertical direction. The first transfer electrodes are connected in a horizontal direction by an inter-pixel interconnection formed in the same layer. Shunt interconnections are formed in the horizontal direction and in the vertical direction above the transfer layers. The shunt interconnection connected to the second transfer interconnection is formed on the inter-pixel interconnection. The shunt interconnection connected to the third transfer electrode is formed above the transfer electrodes. | 10-22-2009 |
| 20090268066 | SOLID-STATE IMAGING DEVICE, PRODUCTION METHOD AND DRIVE METHOD THEREOF, AND CAMERA - A solid-state imaging device capable of reducing an eclipse (blocking) of an incident light at a circumferential portion of a light receiving portion and realizing a larger angle of view and high-speed driving. A single-layer transfer electrode configuration of forming first transfer electrodes and second transfer electrodes by one polysilicon layer is adopted. Two shunt wirings extending in a horizontal direction are formed on the first transfer electrodes connected in a horizontal direction and, for example, four-phase transfer pulses are supplied to first transfer electrodes and second transfer electrodes on transfer channels through low-resistance shunt wirings extending in the horizontal direction. | 10-29-2009 |
| 20090268073 | SOLID-STATE IMAGING DEVICE, PRODUCTION METHOD AND DRIVE METHOD THEREOF, AND CAMERA - A solid-state imaging device capable of reducing an eclipse (blocking) of an incident light at a circumferential portion of a light receiving portion and realizing a larger angle of view and high-speed driving. A single-layer transfer electrode configuration of forming first transfer electrodes and second transfer electrodes by one polysilicon layer is adopted. Two shunt wirings extending in a horizontal direction are formed on the first transfer electrodes connected in a horizontal direction and, for example, four-phase transfer pulses are supplied to first transfer electrodes and second transfer electrodes on transfer channels through low-resistance shunt wirings extending in the horizontal direction. | 10-29-2009 |
| 20090269876 | SOLID-STATE IMAGING DEVICE, PRODUCTION METHOD AND DRIVE METHOD THEREOF, AND CAMERA - A solid-state imaging device capable of reducing an eclipse (blocking) of an incident light at a circumferential portion of a light receiving portion and realizing a larger angle of view and high-speed driving. A single-layer transfer electrode configuration of forming first transfer electrodes and second transfer electrodes by one polysilicon layer is adopted. Two shunt wirings extending in a horizontal direction are formed on the first transfer electrodes connected in a horizontal direction and, for example, four-phase transfer pulses are supplied to first transfer electrodes and second transfer electrodes on transfer channels through low-resistance shunt wirings extending in the horizontal direction. | 10-29-2009 |
| 20090317936 | Solid state imaging device, method of producing the same and camera relating to same - A solid state imaging device improving and stabilizing imaging characteristic by optimizing a location of a positive hole accumulation layer to an electrode at the periphery of a light receiving portion, and having light receiving portions formed on a substrate and electrodes formed on the substrate at the periphery of the light receiving portion, each electrode including at least a first electrode to which a positive voltage is applied and a second electrode to which only 0 volt or a negative polarity voltage is applied, each light receiving portion having a signal charge accumulation region formed on the substrate and a positive hole accumulation region formed in a surface layer portion of the signal charge accumulation region, each positive hole accumulation region arranged at a distance from the first electrode and arranged so as. to overlap the second electrode, and method of producing the same and a camera. | 12-24-2009 |
| 20100066886 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A solid-state imaging device includes a pixel section including light receiving sensors, horizontally spaced vertical transfer registers including vertical transfer channel regions and vertical transfer electrodes formed above the vertical transfer channel regions, vertically spaced horizontal transfer registers each including a horizontal transfer channel region and horizontal transfer electrodes formed side by side in a horizontal direction above the horizontal transfer channel region and formed in the same layer as the vertical transfer electrodes, and a horizontal-to-horizontal transfer portion formed between adjacent two of the horizontal transfer registers and including a horizontal-to-horizontal transfer channel region interconnecting respective parts of the horizontal transfer channel regions positioned under the horizontal transfer electrodes to which the transfer drive pulses having different phases are applied, and a horizontal-to-horizontal transfer electrode formed above the horizontal-to-horizontal transfer channel region in the same layer as both the vertical transfer electrodes and the horizontal transfer electrodes. | 03-18-2010 |
| 20100079652 | Solid-state image pickup device and driving method therefor, and electronic apparatus - A solid-state image pickup device includes a plurality of light sensing sections; a plurality of vertical transfer registers configured to transfer signal charge of the plurality of light sensing sections in the vertical direction; a horizontal transfer register configured to transfer the signal charge in the horizontal direction; a floating gate amplifier that is placed at an output side of the horizontal transfer register; a floating diffusion amplifier that is placed in a horizontal transfer register which is provided at a stage subsequent to the floating gate amplifier; and an overflow drain mechanism that is placed in the horizontal transfer register between the floating gate amplifier and the floating diffusion amplifier. | 04-01-2010 |
| 20100171857 | METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE - A method of manufacturing a solid-state imaging device. Light-receiving sensor portions each constituting a pixel in the form of a matrix is arranged. The matrix has columns aligned in a vertical direction and rows aligned in a horizontal direction. Charge-transfer portions are formed on either side of the columns of said pixels. Transfer electrodes in said charge-transfer portions are formed to include a first transfer electrode formed of a first electrode layer and a second transfer electrode formed by electrically connecting the first electrode layer and a second electrode layer through a contact. The second transfer electrode being disposed in the vertical direction above the charge-transfer portion in a vicinity of the contact to decrease the width of the charge-transfer portions in the horizontal direction and increase the light receiving sensor portions in the vertical direction. | 07-08-2010 |
| 20100188547 | Solid-state image capturing apparatus, driving method thereof and electronic apparatus - A solid-state image capturing apparatus includes: a plurality of light sensing units; a plurality of vertical transfer registers including a transfer channel region and a plurality of vertical transfer electrodes; and a first channel stop region provided in parallel to the transfer channel region of the vertical transfer register. Among the vertical transfer electrodes, a vertical transfer electrode serving as a reading electrode is formed without overlapping the first channel stop region. | 07-29-2010 |
| 20100193670 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, METHOD OF DRIVING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A solid-state imaging device includes: a substrate; a substrate voltage supply applying a first potential to the substrate during a light receiving period including first and second exposure periods different from each other and applying a second potential to the substrate during a no-light receiving period; and a plurality of pixels each including: a light receiving portion formed on a front surface side of the substrate and generating a signal charge in accordance with received light; a storage capacitor formed adjacent to the light receiving portion so that the signal charge generated in the light receiving portion is transmitted thereto and is stored and held therein when the first potential is applied to the substrate; dark current suppressing portions; an electronic shutter adjusting layer; a reading gate portion; and a vertical transmission register transmitting the signal charge read by the reading gate portion in the vertical direction. | 08-05-2010 |
| 20100194936 | SOLID-STATE IMAGE CAPTURING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGE CAPTURING DEVICE, METHOD OF DRIVING SOLID-STATE IMAGE CAPTURING DEVICE, AND ELECTRONIC APPARATUS - A solid-state image capturing device includes: a substrate; a substrate voltage source which applies a first potential to the substrate during a light reception period and applies a second potential to the substrate during a non-light reception period; and a plurality of pixels which each includes a light receiver which is formed on a front surface of the substrate and generates signal charges in accordance with received light, a storage capacitor which is formed adjacent to the light receiver and accumulates and stores signal charges generated by the light receiver, dark-current suppressors which are formed in the light receiver and the storage capacitor, an electronic shutter adjusting layer which is formed in an area facing the light receiver in the substrate and distant from the storage capacitor and which adjusts potential distribution, and a floating diffusion portion to which the signal charges accumulated in the storage capacitor are transmitted. | 08-05-2010 |
| 20100194959 | SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING THE SAME, METHOD FOR DRIVING THE SAME, AND ELECTRONIC APPARATUS - A solid-state imaging device including: a substrate; a substrate voltage supply that applies a first potential to the substrate during a light receiving period and applies a second potential to the substrate during a no-light receiving period; and a plurality of pixels including a light receiving portion that generates signal charges in response to received light, a storage capacitor that stores and holds the signal charges, a dark current suppressing portion, an electronic shutter adjusting layer that adjusts potential distribution in a substrate so that the signal charges are swept to the rear surface side of the substrate, a readout gate portion that reads out the signal charges stored in the storage capacitor, and a vertical transfer register that transfers the signal charges read out by the readout gate portion in a vertical direction. | 08-05-2010 |
| 20100227427 | Solid-state imaging device, and camera implementing the same - To provide a solid-state imaging device able to improve light transmittance of a transparent insulation film in a light incident side of a substrate, suppress the dark current, and prevent a quantum efficiently loss, wherein a pixel circuit is formed in a first surface of the substrate and light is received from a second surface, and having: a light receiving unit formed in the substrate and for generating a signal charge corresponding to an amount of incidence light and storing it; a transparent first insulation film formed on the second surface; and a transparent second insulation film formed on the first insulation film and for retaining a charge having the same polarity as the signal charge in an interface of the first insulation film or in inside, thicknesses of the first and second insulation film being determined to obtain a transmittance higher than when using only the first insulation film. | 09-09-2010 |
| 20110053305 | SOLID-STATE IMAGING DEVICE, CAMERA AND METHOD OF PRODUCING THE SOLID-STAE IMAGING DEVICE - Producing a solid-state imaging device by (1) forming a structure including (a) a substrate having a first impurity with a first concentration, (b) a first conductive type Si layer and (c) a first conductive type impurity layer stacked on one another in that order, the first conductive type Si layer being formed on the substrate, the first conductive type impurity layer being formed in a boundary region including a boundary of the substrate and the Si layer, and a part of the substrate facing the boundary and a part of the first conductive type Si layer facing the boundary having a second impurity; and (2) forming in the Si layer a second conductive type region capable of storing in the Si layer a charge generated by a photoelectric conversion; and forming an interconnection layer on the Si layer. | 03-03-2011 |
| 20110065225 | SOLID-STATE IMAGING DEVICE, METHOD OF PRODUCING THE SAME, AND CAMERA - To provide a solid-state imaging device able to improve light transmittance of a transparent insulation film in a light incident side of a substrate, suppress the dark current, and prevent a quantum efficiently loss, wherein a pixel circuit is formed in a first surface of the substrate and light is received from a second surface, and having: a light receiving unit formed in the substrate and for generating a signal charge corresponding to an amount of incidence light and storing it; a transparent first insulation film formed on the second surface; and a transparent second insulation film formed on the first insulation film and for retaining a charge having the same polarity as the signal charge in an interface of the first insulation film or in inside, thicknesses of the first and second insulation film being determined to obtain a transmittance higher than when using only the first insulation film. | 03-17-2011 |
