| Patent application number | Description | Published |
|---|
| 20080299415 | Sputtering Target, Thin Film for Optical Information Recording Medium and Process for Producing the Same - A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying A | 12-04-2008 |
| 20090042058 | MAGNETIC SEMICONDUCTOR MATERIAL - A magnetic semiconductor material contains at least one type of transition metals (Mn | 02-12-2009 |
| 20090240085 | METHOD OF PRODUCING DIOL, POLYDIOL, SECONDARY ALCOHOL OR DIKETONE COMPOUND - The invention is a process of using, as a reducing agent, a 12CaO.7Al | 09-24-2009 |
| 20090278122 | AMORPHOUS OXIDE AND THIN FILM TRANSISTOR - The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 10 | 11-12-2009 |
| 20090280600 | AMORPHOUS OXIDE AND THIN FILM TRANSISTOR - The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 10 | 11-12-2009 |
| 20100167000 | Sputtering Target, Thin Film for Optical Information Recording Medium and Process for Producing the Same - A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying A | 07-01-2010 |
| 20100240521 | Sputtering Target, Thin Film for Optical Information Recording Medium and Process for Producing the Same - A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying A | 09-23-2010 |
| 20110002832 | SUPERCONDUCTING COMPOUND AND METHOD FOR PRODUCING THE SAME - Disclosed is a superconducting compound which has a structure obtained by partially substituting oxygen ions of a compound, which is represented by the following chemical formula; LnTMOPh [wherein Ln represents at least one element selected from Y and rare earth metal elements (La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu), TM represents at least one element selected from transition metal elements (Fe, Ru, Os, Ni, Pd and Pt), and Pn represents at least one element selected from pnictide elements (N, P, As and Sb)] and has a ZrCuSiAs-type crystal structure (space group P4/nmm), with at least one kind of monovalent anion (F | 01-06-2011 |
| 20110045985 | SUPERCONDUCTOR COMPRISING LAMELLAR COMPOUND AND PROCESS FOR PRODUCING THE SAME - A superconductor which comprises a new compound composition substituting for perovskite copper oxides. The superconductor is characterized by comprising a compound which is represented by the chemical formula A(TM) | 02-24-2011 |
| 20110101352 | AMORPHOUS OXIDE AND THIN FILM TRANSISTOR - The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 10 | 05-05-2011 |
| 20110111965 | LAYERED COMPOUND, SUPERCONDUCTOR AND METHOD FOR PRODUCING SAME - Provides a new non-oxide system compound material superconductor as an alternative of the perovskite type copper oxides superconductor. | 05-12-2011 |
