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Hidenori Miyoshi, Yamanashi JP

Hidenori Miyoshi, Yamanashi JP

Patent application numberDescriptionPublished
20080213998METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR MANUFACTURING APPARATUS AND STORAGE MEDIUM FOR EXECUTING THE METHOD - The semiconductor device manufacturing method includes forming an alloy film of copper and an additive metal along a wall surface of a recess portion of an interlayer insulating film in a surface of a substrate; forming a barrier layer made of a compound of the additive metal and a constituent element of the interlayer insulating film; heating the substrate under an atmosphere containing an organic acid, an organic acid anhydride, or ketones to precipitate surplus additive metal onto a surface of the alloy film; and burying copper in the recess portion after heating the substrate. Since the organic acid, the organic acid anhydride, and the ketones have a reducing power for Cu, an oxidation of Cu in the alloy film is suppressed while a barrier layer made of a compound of the additive metal and a constituent element of the insulating film is formed.09-04-2008
20090075475METHOD OF SUBSTRATE TREATMENT, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, SUBSTRATE TREATING APPARATUS, AND RECORDING MEDIUM - Substrate processing apparatus 03-19-2009
20090087995METHOD OF SUBSTRATE TREATMENT, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, SUBSTRATE TREATING APPARATUS, AND RECORDING MEDIUM - Substrate processing apparatus 04-02-2009
20090163038HEAT TREATMENT METHOD, HEAT TREATMENT APPARATUS AND SUBSTRATE PROCESSING APPARATUS - Disclosed is a heat treatment unit 06-25-2009
20090324827CVD FILM FORMING METHOD AND CVD FILM FORMING APPARATUS - A wafer W is arranged on a susceptor 12-31-2009
20090325393HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS - Disclosed is a heat treatment method including a step of placing a wafer W provided with a low-k film and a metal layer in a heat treatment furnace 12-31-2009
20100108108SUBSTRATE MOUNTING TABLE, SUBSTRATE PROCESSING APPARATUS AND METHOD FOR TREATING SURFACE OF SUBSTRATE MOUNTING TABLE - A substrate mounting table includes a mounting table main body whose top surface and side surface are covered with an upper cover member. Surface treatment is performed partially to a substrate surrounding region disposed outside a substrate mounting region on a top surface of the upper cover member, so that the substrate surrounding region is smoother than the substrate mounting region. The substrate mounting region is covered by a wafer when the wafer is mounted thereon. Thus, for instance, a metal component generated upon removal of a metal oxide film from the substrate is not easily adhered on the mounting table, and is easily removed if adhered.05-06-2010
20100316799FILM FORMING METHOD AND FILM FORMING APPARATUS - Disclosed is a film forming method including the steps of: producing a monovalent carboxylic acid metal salt gas by reacting a bivalent carboxylic acid metal salt with a carboxylic acid; supplying the monovalent carboxylic acid metal salt gas on a substrate to accumulate a monovalent carboxylic acid metal salt film; and decomposing the monovalent carboxylic acid metal salt film by supplying energy to the substrate formed with the monovalent carboxylic acid metal salt film so as to form a metallic film.12-16-2010

Patent applications by Hidenori Miyoshi, Yamanashi JP