| Patent application number | Description | Published |
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| 20080213998 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR MANUFACTURING APPARATUS AND STORAGE MEDIUM FOR EXECUTING THE METHOD - The semiconductor device manufacturing method includes forming an alloy film of copper and an additive metal along a wall surface of a recess portion of an interlayer insulating film in a surface of a substrate; forming a barrier layer made of a compound of the additive metal and a constituent element of the interlayer insulating film; heating the substrate under an atmosphere containing an organic acid, an organic acid anhydride, or ketones to precipitate surplus additive metal onto a surface of the alloy film; and burying copper in the recess portion after heating the substrate. Since the organic acid, the organic acid anhydride, and the ketones have a reducing power for Cu, an oxidation of Cu in the alloy film is suppressed while a barrier layer made of a compound of the additive metal and a constituent element of the insulating film is formed. | 09-04-2008 |
| 20090075475 | METHOD OF SUBSTRATE TREATMENT, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, SUBSTRATE TREATING APPARATUS, AND RECORDING MEDIUM - Substrate processing apparatus | 03-19-2009 |
| 20090087995 | METHOD OF SUBSTRATE TREATMENT, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, SUBSTRATE TREATING APPARATUS, AND RECORDING MEDIUM - Substrate processing apparatus | 04-02-2009 |
| 20090163038 | HEAT TREATMENT METHOD, HEAT TREATMENT APPARATUS AND SUBSTRATE PROCESSING APPARATUS - Disclosed is a heat treatment unit | 06-25-2009 |
| 20090324827 | CVD FILM FORMING METHOD AND CVD FILM FORMING APPARATUS - A wafer W is arranged on a susceptor | 12-31-2009 |
| 20090325393 | HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS - Disclosed is a heat treatment method including a step of placing a wafer W provided with a low-k film and a metal layer in a heat treatment furnace | 12-31-2009 |
| 20100108108 | SUBSTRATE MOUNTING TABLE, SUBSTRATE PROCESSING APPARATUS AND METHOD FOR TREATING SURFACE OF SUBSTRATE MOUNTING TABLE - A substrate mounting table includes a mounting table main body whose top surface and side surface are covered with an upper cover member. Surface treatment is performed partially to a substrate surrounding region disposed outside a substrate mounting region on a top surface of the upper cover member, so that the substrate surrounding region is smoother than the substrate mounting region. The substrate mounting region is covered by a wafer when the wafer is mounted thereon. Thus, for instance, a metal component generated upon removal of a metal oxide film from the substrate is not easily adhered on the mounting table, and is easily removed if adhered. | 05-06-2010 |
| 20100316799 | FILM FORMING METHOD AND FILM FORMING APPARATUS - Disclosed is a film forming method including the steps of: producing a monovalent carboxylic acid metal salt gas by reacting a bivalent carboxylic acid metal salt with a carboxylic acid; supplying the monovalent carboxylic acid metal salt gas on a substrate to accumulate a monovalent carboxylic acid metal salt film; and decomposing the monovalent carboxylic acid metal salt film by supplying energy to the substrate formed with the monovalent carboxylic acid metal salt film so as to form a metallic film. | 12-16-2010 |
| Patent application number | Description | Published |
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| 20090042384 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND TARGET SUBSTRATE PROCESSING SYSTEM - A semiconductor device manufacturing method includes removing copper deposits, by use of an organic acid gas and an oxidizing gas, from a surface of a second interlayer insulation film having a groove formed therein and reaching a copper-containing electric connector member. The second interlayer insulation film is disposed on a first interlayer insulation film provided with the electric connector member. The method then includes reducing a surface of the electric connector member exposed at a bottom of the groove of the second interlayer insulation film; forming a barrier layer on the second interlayer insulation film; and forming a copper-containing conductive film to fill the groove of the second interlayer insulation film. | 02-12-2009 |
| 20090042397 | COPPER RE-DEPOSITION PREVENTING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SUBSTRATE PROCESSING APPARATUS - A copper re-deposition preventing method includes placing inside a chamber a target substrate with a film including a copper-containing substance and formed thereon, and performing removal of the copper-containing substance from the target substrate placed inside the chamber, by dry cleaning using an organic compound. Then, the method includes unloading from the chamber the target substrate processed by the removal of the copper-containing substance, and depositing a coating film inside the chamber, in which the target substrate processed by the removal of the copper-containing substance is no longer present, thereby covering copper-containing scattered particles left inside the chamber. | 02-12-2009 |
| 20090204252 | SUBSTRATE PROCESSING METHOD AND APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND STORAGE MEDIUM - A substrate processing method includes a first step of forming a metal complex by allowing a processing gas containing an organic compound to be adsorbed by a metal layer formed on a target substrate while setting the target substrate to be kept at a first temperature, and a second step of sublimating the metal complex by heating the target substrate to maintain it at a second temperature higher than the first temperature. | 08-13-2009 |
| 20100029086 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND STORAGE MEDIUM - A semiconductor device having high reliability is provided by reducing fluorine remaining in a metal forming the semiconductor device. Specifically disclosed is a method for manufacturing a semiconductor device including a fluoride removal step for removing a metal fluoride produced on a metal forming an electrode or wiring of a semiconductor device which is formed on a substrate to be processed. This method for manufacturing a semiconductor device is characterized in that the metal fluoride is removed by supplying formic acid in a gaseous state to the substrate to be processed in the fluoride removal step. | 02-04-2010 |
| 20110265950 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND TARGET SUBSTRATE PROCESSING SYSTEM - A semiconductor device manufacturing method includes removing copper deposits, by use of an organic acid gas and an oxidizing gas, from a surface of a second interlayer insulation film having a groove formed therein and reaching a copper-containing electric connector member. The second interlayer insulation film is disposed on a first interlayer insulation film provided with the electric connector member. The method then includes reducing a surface of the electric connector member exposed at a bottom of the groove of the second interlayer insulation film; forming a barrier layer on the second interlayer insulation film; and forming a copper-containing conductive film to fill the groove of the second interlayer insulation film. | 11-03-2011 |
| 20120006782 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A substrate processing method for removing a copper oxide film on a surface of Cu and a Cu-containing residue adhered to an interlayer insulating film in a Cu wiring structure on a substrate by using an organic acid-containing gas is provided. The substrate processing method includes removing the Cu-containing residue by etching by supplying the substrate with a processing gas containing an organic acid gas, after the temperature of the substrate is set to be maintained at a first temperature; and removing the copper oxide film on the surface of Cu by means of a reduction reaction by supplying the substrate with the processing gas containing the organic acid gas, after the temperature of the substrate is set to be maintained at a second temperature that is higher than the first temperature. | 01-12-2012 |
