| Patent application number | Description | Published |
|---|
| 20090101936 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND WAFER - There are provided a semiconductor light emitting element which allows an improvement in light extraction efficiency without increasing the number of fabrication steps, and a wafer. In a semiconductor light emitting element | 04-23-2009 |
| 20090127568 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR FABRICATING THE SAME - A semiconductor light emitting element includes a substrate | 05-21-2009 |
| 20090267091 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a substrate | 10-29-2009 |
| 20090321745 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device includes: a substrate; a first conductivity type layer formed on the substrate and including a plurality of group III-V nitride semiconductor layers of a first conductivity type; an active layer formed on the first conductivity type layer; and a second conductivity type layer formed on the active layer and including a group III-V nitride semiconductor layer of a second conductivity type. The first conductivity type layer includes an intermediate layer made of Al | 12-31-2009 |
| 20100187565 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND WAFER - There are provided a semiconductor light emitting element which allows an improvement in light extraction efficiency without increasing the number of fabrication steps, and a wafer. In a semiconductor light emitting element | 07-29-2010 |
| 20110089466 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a substrate | 04-21-2011 |
| Patent application number | Description | Published |
|---|
| 20100047939 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - In a semiconductor light emitting device, light is lost from a side surface of a substrate; therefore, if a substrate side surface occupies a large area, it decreases light extraction efficiency. The area of the substrate side surface may be reduced by reducing a thickness of the substrate. However, a thin substrate has low mechanical strength and is cracked by a stress during work process, and that decreases the yield. | 02-25-2010 |
| 20100237382 | SEMICONDUCTOR LIGHT EMITTING ELEMENT, SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE ELEMENT, AND METHOD FOR MANUFACTURING THE DEVICE - The present invention provides a semiconductor light emitting element capable of improving light extraction efficiency and a semiconductor light emitting device using the semiconductor light emitting element without adding any manufacturing step | 09-23-2010 |
| 20100252855 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - In semiconductor light-emitting devices in which a light-emitting layer is formed on one surface of a substrate, and an n-side electrode and a p-side electrode are formed over the same surface of the substrate as the light-emitting layer, heat generated by a semiconductor light-emitting element needs to be dissipated to a submount. However, it is extremely complicated to fabricate connection members serving also as heat dissipating members and to control fabrication of the connection members, according to semiconductor light-emitting elements having electrodes of various sizes and shapes. By increasing the density of p-side bumps near the n-side electrode, the heat transfer area from the semiconductor light-emitting element to the submount is increased near the n-side electrode, whereby the heat dissipation effect is enhanced. | 10-07-2010 |
| 20100258830 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME - Light from a semiconductor light-emitting element travels in all directions. Thus, light that travels in the directions other than a lighting direction cannot be used effectively. Means for forming a semiconductor light-emitting element having tilted side surfaces, and forming a reflective layer on the tilted side surfaces has been proposed. However, since the tilted surfaces are formed by an etching method or the like, it takes a long time to form the tilted surfaces, and it is difficult to control the tilted surfaces. As a solution to these problems, semiconductor light-emitting elements are placed on a submount substrate and sealed with a sealant, and then a groove is formed in a portion between adjoining ones of the semiconductor light-emitting elements. The grooves formed are filled with a reflective material, and a light-emitting surface is polished. Then, the submount substrate is divided into individual semiconductor light-emitting devices. Thus, a semiconductor light-emitting device having a reflective layer on its side surfaces can be obtained. | 10-14-2010 |
| 20100258837 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE SAME - In a semiconductor light emitting device, in which a light emitting layer is formed on one surface of a conductive substrate, and an n-type electrode and a p-type electrode are formed on the same side as the light emitting layer, there has been the problem that, if larger electric power is applied, heat is generated near the n-side electrode to reduce luminous efficiency. | 10-14-2010 |
| 20110037092 | LIGHT-EMITTING ELEMENT - A light-emitting device includes an n-type semiconductor layer | 02-17-2011 |
