Patent application number | Description | Published |
20090026353 | Photomultiplier Tube and Radiation Detecting Device - A vacuum vessel is configured by hermetically joining a faceplate ( | 01-29-2009 |
20090140151 | Photomultiplier Tube and Radiation Detecting Device - A vacuum vessel is configured by hermetically joining a faceplate ( | 06-04-2009 |
20090160332 | Photomultiplier Tube, Radiation Detecting Device, and Photomultiplier Tube Manufacturing Method - A vacuum vessel is configured by hermetically joining a faceplate to one end of a side tube and a stem to the other end via a tubular member. A photocathode, a focusing electrode, dynodes, a drawing electrode, and anodes are arranged within the vacuum vessel. The dynodes and the anodes have a plurality of channels in association with each other. Each electrode has cutout portions that overlap in a stacking direction, and supporting pins and lead pins are arranged in the cutout portions. A bridge is provided in a concave section arranged between unit anodes, and the bridge is cut off after the anode plate is placed on stem pins. Effective areas of each electrode and the anode are secured sufficiently, thereby allowing electrons to be detected efficiently. | 06-25-2009 |
20090200940 | Photomultiplier Tube and Radiation Detecting Device - A vacuum vessel ( | 08-13-2009 |
20090212699 | PHOTOMULTIPLIER - The present invention relates to a photomultiplier that realizes a significant improvement of response time characteristics by a structure enabling mass production. The photomultiplier comprises a sealed container, and, in the sealed container, a photocathode, an electron multiplier section, and an anode are respectively disposed. The electron multiplier section includes multiple stages of dynode units, and each of the multiple stages of dynode units is fixed with one end of the associated dynode pin while being electrically connected thereto. In particular, the dynode pin, whose one ends are fixed to the multiple stages of dynode units, are held within an effective region of the electron multiplier section contributing to secondary electron multiplication, when the electron multiplier section is viewed from the photocathode side. By this configuration, a focusing distance from the photocathode to a first stage dynode unit can be shortened effectively and the effective region of the electron multiplier section can be enlarged to effectively reduce variations in transit time of photoelectrons propagating from the photocathode to the first stage dynode unit. | 08-27-2009 |
20100213837 | PHOTOMULTIPLIER TUBE - Electrons are prevented from being made incident onto an insulation part of a casing between dynodes to improve a withstand voltage. The photomultiplier tube | 08-26-2010 |
20100213838 | PHOTOMULTIPLIER TUBE - Electrons are prevented from being made incident onto an insulation part between dynodes to improve a withstand voltage. The photomultiplier tube | 08-26-2010 |
20110221336 | PHOTOMULTIPLIER AND ITS MANUFACTURING METHOD - The present invention relates to a photomultiplier having a structure for making it possible to easily realize high detection accuracy and fine processing, and a method of manufacturing the same. The photomultiplier comprises an enclosure having an inside kept in a vacuum state, whereas a photocathode emitting electrons in response to incident light, an electron multiplier section multiplying in a cascading manner the electron emitted from the photocathode, and an anode for taking out a secondary electron generated in the electron multiplier section are arranged in the enclosure. A part of the enclosure is constructed by a glass substrate having a flat part, whereas each of the electron multiplier section and anode is two-dimensionally arranged on the flat part in the glass substrate. | 09-15-2011 |
20120091316 | PHOTOMULTIPLIER TUBE - The photomultiplier tube | 04-19-2012 |
20120091889 | PHOTOMULTIPLIER TUBE - The photomultiplier tube | 04-19-2012 |
20120091890 | PHOTOMULTIPLIER TUBE - The photomultiplier tube | 04-19-2012 |
20120125887 | METHOD FOR MANUFACTURING LIGHT-ABSORBING SUBSTRATE AND METHOD FOR MANUFACTURING MOLD FOR MAKING SAME - A method for manufacturing a light-absorbing substrate having a surface with depressions and projections comprises a first step of irradiating a substrate with a laser light so as to form a plurality of modified regions arranged two-dimensionally along a surface of the substrate within the substrate and cause at least one of each modified region and a fracture generated from the modified region to reach the surface of the substrate and a second step of etching the surface of the substrate after the first step so as to form depressions and projections on the surface of the substrate. | 05-24-2012 |
20120125892 | LASER PROCESSING METHOD - A laser processing method for forming a hole in a sheet-like object to be processed made of silicon comprises a depression forming step of forming a depression in a part corresponding to the hole on a laser light entrance surface side of the object, the depression opening to the laser light entrance surface; a modified region forming step of forming a modified region along a part corresponding to the hole in the object by converging a laser light at the object after the depression forming step; and an etching step of anisotropically etching the object after the modified region forming step so as to advance the etching selectively along the modified region and form the hole in the object; wherein the modified region forming step exposes the modified region or a fracture extending from the modified region to an inner face of the depression. | 05-24-2012 |
20120125893 | LASER PROCESSING METHOD - In a method comprising a modified region forming step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a plurality of modified spots within the object along a modified region forming line tilted in a first lateral direction with respect to a thickness direction of the object and the plurality of modified spots construct a modified region, and an etching step of anisotropically etching the object after the modified region forming step so as to advance the etching selectively along the modified region and form the object with a space extending obliquely with respect to the thickness direction, the modified region forming step forms the plurality of modified spots such that the modified spots adjacent to each other at least partly overlap each other when seen in the first lateral direction. | 05-24-2012 |
20120129348 | LASER PROCESSING METHOD - A laser processing method of converging laser light into an object to be processed made of silicon so as to form a modified region and etching the object along the modified region so as to form the object with a through hole comprises a laser light converging step of converging the laser light at the object so as to form the modified region along a part corresponding to the through hole in the object; an etch resist film producing step of producing an etch resist film resistant to etching on an outer surface of the object after the laser light converging step; and an etching step of etching the object so as to advance the etching selectively along the modified region and form the through hole after the etch resist film producing step; while the laser light converging step exposes the modified region to the outer surface of the object. | 05-24-2012 |
20120129359 | LASER PROCESSING METHOD - A laser processing method comprises a laser light converging step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a modified region within the object, and an etching step of anisotropically etching the object so as to thin the object to a target thickness and advancing the etching selectively along the modified region so as to form the object with a through hole tilted with respect to a thickness direction of the object after the laser light converging step, wherein the laser light converging step forms a first modified region as the modified region in a part corresponding to the through hole in the object and a second modified region as the modified region extending parallel to the thickness direction and joining with the first modified region in a part to be removed upon thinning by the anisotropic etching in the object, and wherein the etching step advances the etching selectively along the second modified region and then along the first modified region while thinning the object and completes forming the through hole when the object is at the target thickness. | 05-24-2012 |
20120131958 | LASER PROCESSING METHOD - A laser processing method of converging a laser light into an object to be processed made of glass so as to form a modified region and etching the object along the modified region so as to form a through hole in the object comprises a browning step of discoloring at least a part of the object by browning; a laser light converging step of forming the modified region in the discolored part of the object by converging the laser light into the object after the browning step; and an etching step of etching the object after the laser light converging step so as to advance the etching selectively along the modified region and form the through hole. | 05-31-2012 |
20120135585 | METHOD FOR MANUFACTURING CHIP - A method for manufacturing a chip constituted by a functional device formed on a substrate comprises a functional device forming step of forming the functional device on one main face of a sheet-like object to be processed made of silicon; a first modified region forming step of converging a laser light at the object so as to form a first modified region along the one main face of the object at a predetermined depth corresponding to the thickness of the substrate from the one main face; a second modified region forming step of converging the laser light at the object so as to form a second modified region extending such as to correspond to a side edge of the substrate as seen from the one main face on the one main face side in the object such that the second modified region joins with the first modified region along the thickness direction of the object; and an etching step of selectively advancing etching along the first and second modified regions after the first and second modified region forming steps so as to cut out a part of the object and form the substrate. | 05-31-2012 |
20120135602 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device having a cooling mechanism comprises a modified region forming step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a modified region within the object along a line to form a modified region, an etching step of anisotropically etching the object after the modified region forming step so as to advance the etching selectively along the first modified region and form a flow path for circulating a coolant as a cooling mechanism within the object, and a functional device forming step of forming a functional device on one main face side of the object. | 05-31-2012 |
20120135606 | LASER PROCESSING METHOD - A laser processing method of converging laser light into an object to be processed made of silicon so as to form a modified region and etching the object along the modified region so as to form the object with a through hole comprises an etch resist film producing step of producing an etch resist film resistant to etching on an outer surface of the object; a laser light converging step of converging the laser light at the object after the etch resist film producing step so as to form the modified region along a part corresponding to the through hole in the object and converging the laser light at the etch resist film so as to form a defect region along a part corresponding to the through hole in the etch resist film; and an etching step of etching the object after the laser light converging step so as to advance the etching selectively along the modified region and form the through hole. | 05-31-2012 |
20120135607 | SUBSTRATE PROCESSING METHOD - A substrate processing method for forming a space extending along a predetermined line in a silicon substrate includes a first step of converging a laser light which is an elliptically-polarized light having an ellipticity other than 1 at the substrate so as to form a plurality of modified spots within the substrate along the line and produce a modified region including the modified spots, and a second step of anisotropically etching the substrate so as to advance an etching selectively along the modified region and form the space in the substrate. In the first step, the light is converged at the substrate such that a moving direction of the light with respect to the substrate and a direction of polarization of the light form an angle of 45° or greater therebetween, and the modified spots are made align in one row along the line. | 05-31-2012 |
20120135608 | SUBSTRATE PROCESSING METHOD - A substrate processing method for forming a space extending along a predetermined line in a silicon substrate includes a first step of converging a laser light which is an elliptically-polarized light having an ellipticity other than 1 at the substrate so as to form a plurality of modified spots within the substrate along the line and construct a modified region including the modified spots, and a second step of anisotropically etching the substrate so as to advance an etching selectively along the modified region and form the space in the substrate. In the first step, the light is converged at the substrate such that a moving direction of the light with respect to the substrate and a direction of polarization of the light form an angle of less than 45° therebetween, and the modified spots are made align in a plurality of rows along the line. | 05-31-2012 |
20120142186 | METHOD FOR MANUFACTURING INTERPOSER - A method for manufacturing an interposer equipped with a plurality of through-hole electrodes comprises a laser light converging step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a modified region in the object; an etching step of anisotropically etching the object after the laser light converging step so as to advance etching selectively along the modified region and form a plurality of through holes in the object, each through hole being tilted with respect to a thickness direction of the object and having a rectangular cross section; an insulating film forming step of forming an insulating film on an inner wall of each through hole after the etching step; and a through-hole electrode forming step of inserting a conductor into the through holes so as to form the through-hole electrodes after the insulating film forming step; wherein the plurality of through holes are arranged such that the through holes aligning in the tilted direction are staggered in a direction perpendicular to the tilted direction as seen from a main face of the object. | 06-07-2012 |
20120274204 | PHOTOMULTIPLIER AND ITS MANUFACTURING METHOD - The present invention relates to a photomultiplier having a structure for making it possible to easily realize high detection accuracy and fine processing, and a method of manufacturing the same. The photomultiplier comprises an enclosure having an inside kept in a vacuum state, whereas a photocathode emitting electrons in response to incident light, an electron multiplier section multiplying in a cascading manner the electron emitted from the photocathode, and an anode for taking out a secondary electron generated in the electron multiplier section are arranged in the enclosure. A part of the enclosure is constructed by a glass substrate having a flat part, whereas each of the electron multiplier section and anode is two-dimensionally arranged on the flat part in the glass substrate. | 11-01-2012 |
20120299219 | LASER PROCESSING METHOD - The present invention provides a laser processing method which improves strength and quality of an object to be processed after working. In the present embodiment, after modified regions | 11-29-2012 |
20130033175 | ELECTRON MULTIPLIER AND PHOTOMULTIPLIER INCLUDING THE SAME - The present invention relates to an electron multiplier and others to effectively suppress luminescence noise, even in compact size, in which each of multistage dynodes has a plurality of columns each having a peripheral surface separated physically, and in which each column is processed in such a shape that an area or a peripheral length of a section parallel to an installation surface on which the electron multiplier is arranged becomes minimum at a certain position on the peripheral surface in the column of interest. | 02-07-2013 |
20140111085 | PHOTOMULTIPLIER AND ITS MANUFACTURING METHOD - The present invention relates to a photomultiplier having a structure for making it possible to easily realize high detection accuracy and fine processing, and a method of manufacturing the same. The photomultiplier comprises an enclosure having an inside kept in a vacuum state, whereas a photocathode emitting electrons in response to incident light, an electron multiplier section multiplying in a cascading manner the electron emitted from the photocathode, and an anode for taking out a secondary electron generated in the electron multiplier section are arranged in the enclosure. A part of the enclosure is constructed by a glass substrate having a flat part, whereas each of the electron multiplier section and anode is two-dimensionally arranged on the flat part in the glass substrate. | 04-24-2014 |