Patent application number | Description | Published |
20090253249 | Method of manufacturing semiconductor device - There is provided a method of manufacturing a semiconductor device which, in the case where an InP-based device is formed with a sacrificial layer in between, is capable of obtaining better device characteristics than those in the case where an AlAs single layer is used as the sacrificial layer, and which does not have the possibility that the device layer is etched together with the sacrificial layer during etching of the sacrificial layer. A method of manufacturing a semiconductor device includes: a formation step of forming a sacrificial layer which is pseudomorphic to InP on an InP substrate, and then forming an InP-based device layer on the sacrificial layer; and a separation step of separating the InP substrate and the device layer from each other by etching the sacrificial layer. | 10-08-2009 |
20110081746 | METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - A method for producing a semiconductor device includes the steps of forming an organic semiconductor layer on a substrate; forming a protective pattern on the organic semiconductor layer; and patterning the organic semiconductor layer by dissolving, in an organic solvent, or subliming the organic semiconductor layer using the protective pattern as a mask. | 04-07-2011 |
20110101358 | SEMICONDUCTOR DEVICE AND DISPLAY APPARATUS USING THE SEMICONDUCTOR DEVICE - Disclosed herein is a semiconductor device which employs a thin-film transistor. In addition, the semiconductor device has a gate electrode, a gate insulation film, an organic semiconductor layer, a structure, a source electrode, a drain electrode, and an electrode material layer. | 05-05-2011 |
20110204375 | THIN FILM TRANSISTOR STRUCTURE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE - A high-performance thin film transistor structure which is easily manufactured is provided. The thin film transistor structure includes: a first electrode; second and third electrodes apart from each other in a hierarchical level different from that of the first electrode; first, second, and third wirings connected to the first, second, and third electrodes, respectively; a main stack body disposed so as to be opposed to the first electrode with an interlayer insulating layer in between, between the first electrode, and the second and third electrodes; and a sub stack body including an insulating layer and a semiconductor layer, disposed so as to be opposed to the first wiring with the interlayer insulating layer in between, between the first and second wirings in a position where the first and second wirings overlap and/or between the first and third wirings in a position where the first and third wirings overlap. | 08-25-2011 |
20110215406 | THIN FILM TRANSISTOR AND ELECTRONIC DEVICE - A thin film transistor capable of stably obtaining good performance is provided. The thin film transistor includes an organic semiconductor layer, and a protective layer and a source electrode and a drain electrode formed on the organic semiconductor layer. The protective layer is disposed at least in a region between the source electrode and the drain electrode. | 09-08-2011 |
20120149179 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - There is provided a method of manufacturing a semiconductor device which, in the case where an InP-based device is formed with a sacrificial layer in between, is capable of obtaining better device characteristics than those in the case where an AlAs single layer is used as the sacrificial layer, and which does not have the possibility that the device layer is etched together with the sacrificial layer during etching of the sacrificial layer. A method of manufacturing a semiconductor device includes: a formation step of forming a sacrificial layer which is pseudomorphic to InP on an InP substrate, and then forming an InP-based device layer on the sacrificial layer; and a separation step of separating the InP substrate and the device layer from each other by etching the sacrificial layer. | 06-14-2012 |
20120292758 | SEMICONDUCTOR ELEMENT AND ELECTRONIC APPARATUS - A semiconductor element including an organic semiconductor layer and a layer disposed on the upper surface of the organic semiconductor layer, wherein the outline of the layer is inside the outline of the organic semiconductor layer. | 11-22-2012 |
20120319116 | SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING SAME, DISPLAY DEVICE, AND ELECTRONIC DEVICE - A semiconductor element includes: an organic semiconductor layer; an electrode disposed on the organic semiconductor layer so as to be in contact with the organic semiconductor layer; and a wiring layer formed separately from the electrode and electrically connected to the electrode. | 12-20-2012 |
20120322899 | METHOD FOR MANUFACTURING A REGENERATED FISCHER-TROPSCH SYNTHESIS CATALYST, AND HYDROCARBON MANUFACTURING METHOD - A method for producing a regenerated Fischer-Tropsch synthesis catalyst obtained by regenerating a spent catalyst used in a Fischer-Tropsch synthesis reaction, comprising a steaming step of bringing the above spent catalyst into contact with a mixed gas comprising 1 to 30% by volume of steam and an inert gas at a pressure of atmospheric pressure to 5 MPa and a temperature of 150 to 350° C., the above spent catalyst being a spent catalyst in which cobalt and/or ruthenium is supported on a carrier comprising silica with an average pore diameter measured by a nitrogen adsorption method of 4 to 25 nm, and of which activity represented by an initial carbon monoxide conversion is 40 to 95%, based on the activity of a corresponding unused catalyst. | 12-20-2012 |
20120329890 | FISCHER-TROPSCH SYNTHESIS CATALYST, MANUFACTURING METHOD THEREFOR, AND HYDROCARBON MANUFACTURING METHOD - A Fischer-Tropsch synthesis catalyst containing 10 to 30% by mass, as a metal atom, of metallic cobalt and/or cobalt oxide, based on the mass of the catalyst, supported on a carrier containing silica, in which the carrier has an average pore diameter of 8 to 25 nm and the metallic cobalt and/or cobalt oxide has an average crystallite diameter of not less than the average pore diameter of the carrier and less than 35 nm. | 12-27-2012 |
20130008827 | HYDROISOMERIZATION CATALYST, PROCESS FOR PRODUCING THE SAME, METHOD OF DEWAXING HYDROCARBON OIL, PROCESS FOR PRODUCING HYDROCARBON, AND PROCESS FOR PRODUCING LUBE BASE OIL - The hydroisomerization catalyst of the present invention is a catalyst used for hydroisomerization of a hydrocarbon, including a support including a calcined zeolite modified with at least one metal selected from the group consisting of Na, K, Cs, Mg, Ca, Ba, and K, and having a thermal history that includes heating at 350° C. or more, and at least one inorganic oxide selected from the group consisting of alumina, silica, titania, boria, zirconia, magnesia, ceria, zinc oxide, phosphorus oxide, and a composite oxide containing a combination of at least two or more of these oxides; and at least one metal supported on the support and selected from the group consisting of elements belonging to Groups 8 to 10 of the periodic table, molybdenum and tungsten. | 01-10-2013 |
20130237020 | THIN FILM TRANSISTOR STRUCTURE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE - A high-performance thin film transistor structure which is easily manufactured is provided. The thin film transistor structure includes: a first electrode; second and third electrodes apart from each other in a hierarchical level different from that of the first electrode; first, second, and third wirings connected to the first, second, and third electrodes, respectively; a main stack body disposed so as to be opposed to the first electrode with an interlayer insulating layer in between, between the first electrode, and the second and third electrodes; and a sub stack body including an insulating layer and a semiconductor layer, disposed so as to be opposed to the first wiring with the interlayer insulating layer in between, between the first and second wirings in a position where the first and second wirings overlap and/or between the first and third wirings in a position where the first and third wirings overlap. | 09-12-2013 |
20140018454 | ACTIVATED FISCHER-TROPSCH SYNTHESIS REACTION CATALYST AND METHOD FOR PRODUCING HYDROCARBONS - A Fischer-Tropsch synthesis reaction catalyst includes a catalyst support containing a silica and zirconium oxide in an amount of 0.5 to 14% by mass based on the mass of the catalyst support, and cobalt metal and a cobalt oxide supported on the catalyst support in an amount equivalent to 10 to 40% by mass of tricobalt tetroxide based on the mass of the catalyst, wherein the degree of reduction of the cobalt atoms is within a range from 75 to 93%, and the amount of hydrogen gas adsorption per unit mass of the catalyst at 100° C. is within a range from 0.40 to 1.0 ml/g. | 01-16-2014 |
20140020383 | Solar Heat Steam Cycle System - An object of the present invention is to provide a solar heat steam cycle system capable of operating efficiently and stably in keeping with the status of collected or stored heat, and a control method for use with the system. | 01-23-2014 |
20140054568 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - A semiconductor device includes: a gate electrode; an organic semiconductor film forming a channel; and a pair of source-drain electrodes formed on the organic semiconductor film, the pair of source-drain electrodes each including a connection layer, a buffer layer, and a wiring layer that are laminated in order. | 02-27-2014 |
20140323777 | FUEL OIL BASE AND AVIATION FUEL COMPOSITION CONTAINING SAME - The aviation fuel oil base of the present invention is obtained by hydrotreating an oil to be treated containing an oxygen-containing hydrocarbon compound derived from an animal or vegetable oils and fat and a sulfur-containing hydrocarbon compound and then hydroisomerizing the resultant hydrotreated oil, wherein a yield of a fraction having a boiling range of 140 to 300° C. is 70 mass % or more; an isoparaffin content is 80 mass % or more; a content of isoparaffin having 2 or more branches is 17 mass % or more; an aromatic content is less than 0.1 vol %; an olefin content is less than 0.1 vol %; a sulfur content is less than 1 mass ppm; and an oxygen content is less than 0.1 mass %. | 10-30-2014 |
20150086153 | OPTICAL DEVICE HAVING A STEPWISE OR TAPERED LIGHT INPUT/OUTPUT PART AND MANUFACTURING METHOD THEREFOR - In a method of manufacturing an optical device including an optical waveguide having a core, a cladding and a light input/output part through which a light beam is input or output, a substrate is prepared which is provided with a uniform thickness of single-crystalline film having its constituent atoms forming a diamond lattice structure and its surface being neither the (111) plane nor its equivalent planes. In the single-crystalline film, a precursor structure is formed which has a precursor of light input/output part. A mask is formed such as to expose the precursor with the remaining part covered. The structure is immersed into an alkaline solution for wet etching with the (111) planes used as etch-stop planes. | 03-26-2015 |
Patent application number | Description | Published |
20090237860 | FEEDSTOCK COMPOSITION AND RAW COKE FOR ELECTRICITY STORAGE CARBON MATERIAL AND NEEDLE COKE - The present invention provides feedstock compositions for use of the production of an activated carbon for electric double layer capacitor electrodes or the production of needle coke, comprising a first heavy oil with an initial boiling point of 300° C. or higher, an asphalten content of 12 percent by mass or less, a saturate content of 50 percent by mass or more and a sulfur content of 0.3 percent by mass or less, produced as a residue resulting from vacuum-distillation of a petroleum-based oil and a second heavy oil with an initial boiling point of 150° C. or higher and a sulfur content of 0.5 percent by mass or less, produced by subjecting a hydrocarbon oil to fluidized catalytic cracking. | 09-24-2009 |
20090268375 | RAW COKE FOR ELECTRICITY STORAGE CARBON MATERIAL AND NEEDLE COKE - The present invention provides a raw coke having such a structure that the graphitized product resulting from graphitization of the raw coke at a temperature of 2800° C. under an inactive gas atmosphere will have ratios of the crystallite size to the lattice constant of 360 or less in the (002) plane and 1500 or less in the (110) plane, as a raw coke providing active carbon produced by alkali-activating the raw coke, which is reduced in remaining alkali content and can simplify washing operation because washing liquid can easily pass through the activated carbon, or as a raw coke for the production of needle coke. | 10-29-2009 |
20110218376 | PROCESS FOR PRODUCING HYDROCARBON OIL - The method for manufacturing a hydrocarbon oil of the present invention comprises a first step wherein a plurality of reaction zones filled with a specific catalyst is disposed in series and a feedstock oil containing an oxygen-containing hydrocarbon compound derived from an animal or vegetable oil is supplied and hydrotreated under the conditions of a hydrogen pressure of 1 MPa or more and 10 MPa or less in each of the reaction zones; and a second step wherein hydrogen, hydrogen sulfide, carbon dioxide and water are removed from a product to be treated obtained in the first step to obtain a hydrocarbon oil. Among the plurality of reaction zones, the inlet temperature of the reaction zone disposed on the most upstream side is 150° C. or more and 250° C. or less, the inlet temperature of the second most upstream reaction zone or below is equal to or higher than the condensation temperature of water, and the outlet temperature of the reaction zone disposed on the most downstream side is 260° C. or more and 360° C. or less. The feedstock oil comprises a recycled oil containing a specific amount of a part of the hydrocarbon oil obtained in the second step and a specific amount of a sulfur-containing hydrocarbon compound. | 09-08-2011 |
20110237853 | PROCESS FOR PRODUCING HYDROCARBON OIL - A method for manufacturing a hydrocarbon oil, comprising: a first step wherein a feedstock oil containing an oxygen-containing organic compound and a water-insoluble chlorine-containing compound is brought into contact with a hydrogenation catalyst comprising a support containing a porous inorganic oxide and one or more metals selected from Group VIA and Group VIII of the periodic table supported on the support in the presence of hydrogen to generate a hydrocarbon oil and water in a vapor state by the hydrodeoxygenation of an oxygen-containing organic compound and convert the water-insoluble chlorine-containing compound into a water-soluble chlorine-containing compound; a second step wherein the water in the reaction product of the first step is maintained in a vapor state and the reaction product of the first step is brought into contact with a nitrogen-containing Brønsted base compound which has a boiling point at normal pressure of 100° C. or less and is water-soluble to obtain a product to be treated; and a third step wherein the product to be treated is cooled to a temperature not higher than the temperature at which water in a vapor state is liquefied to form an aqueous phase containing a water-soluble chlorine-containing compound and a nitrogen-containing Brønsted base compound and then separate the aqueous phase from an oil to be treated to obtain a product oil containing a hydrocarbon oil. | 09-29-2011 |