Patent application number | Description | Published |
20100103972 | PHOTONIC CRYSTAL LASER AND METHOD OF MANUFACTURING PHOTONIC CRYSTAL LASER - A photonic crystal laser comprises an n-type substrate, an n-type clad layer, an active layer, a p-type clad layer, a photonic crystal layer, a p-type electrode, an n-type electrode and a package member. The n-type clad layer is formed on a first surface of the n-type substrate. The active layer is formed on the n-type clad layer. The p-type clad layer is formed on the active layer. The photonic crystal layer is formed between the n-type clad layer and the active layer or between the active layer and the p-type clad layer, and includes a photonic crystal portion. The p-type electrode is formed on the photonic crystal portion. The n-type electrode is formed on a second surface, and includes a light-transmitting portion arranged on a position opposed to the photonic crystal portion and an outer peripheral portion having lower light transmittance than the light-transmitting portion. | 04-29-2010 |
20100172390 | SURFACE-EMITTING LASER ELEMENT, FABRICATION METHOD THEREOF, SURFACE-EMITTING LASER ARRAY, AND FABRICATION METHOD THEREOF - A fabrication method of a surface-emitting laser element includes a step of preparing a conductive GaN multiple-region substrate including a high dislocation density high conductance region, a low dislocation density high conductance region and a low dislocation density low conductance region, as a conductive GaN substrate; a semiconductor layer stack formation step of forming a plurality of group III-V compound semiconductor layer stack including an emission layer on the substrate; and an electrode formation step of forming a semiconductor side electrode and a substrate side electrode. The semiconductor layer and electrodes are formed such that an emission region into which carriers flow in the emission layer is located above and within the span of the low dislocation density high conductance region. Thus, a surface-emitting laser element having uniform light emission at the emission region can be obtained with favorable yield. | 07-08-2010 |
20100220963 | OPTOELECTRIC CONVERSION MODULE, METHOD FOR ASSEMBLING SAME, AND OPTOELECTRIC INFORMATION PROCESSOR USING SAME - An object is to obtain a module in which an optical fiber can be inserted after a ferrule has been mounted on a circuit board. There is provided an optical module ( | 09-02-2010 |
20110012160 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device | 01-20-2011 |
20130083513 | LIGHT SOURCE UNIT, BACKLIGHT UNIT, AND FLAT PANEL DISPLAY DEVICE - A light source unit ( | 04-04-2013 |
20130163253 | WHITE REFLECTIVE FLEXIBLE PRINTED CIRCUIT BOARD - Provided is a flexible printed circuit board having excellent flexibility and a diffusely reflective white surface (white surface) which does not tend to undergo color change even when irradiated with light such as short-wavelength light, i.e., has high light deterioration resistance, and does not tend to undergo color change even when placed in a high-temperature environment, i.e., has excellent thermal deterioration resistance. The white reflective flexible printed circuit board includes a flexible printed circuit board and a surface constituted by a white reflective material layer. The white reflective material layer is composed of a resin composition containing a fluororesin and an inorganic white pigment. Lighting equipment includes the white reflective flexible printed circuit board and an LED mounted on the surface side constituted by the white reflective material layer of the white reflective flexible printed circuit board. | 06-27-2013 |
Patent application number | Description | Published |
20130032928 | GROUP III NITRIDE COMPOSITE SUBSTRATE - A group III nitride composite substrate includes a support substrate, an oxide film formed on the support substrate, and a group III nitride layer formed on the oxide film. The oxide film may be a film selected from the group consisting of a TiO | 02-07-2013 |
20130040442 | METHOD OF MANUFACTURING GaN-BASED FILM - The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided. | 02-14-2013 |
20130137220 | METHOD OF MANUFACTURING GaN-BASED SEMICONDUCTOR DEVICE - A method of manufacturing a GaN-based semiconductor device includes the steps of: preparing a composite substrate including: a support substrate having a thermal expansion coefficient at a ratio of not less than 0.8 and not more than 1.2 relative to a thermal expansion coefficient of GaN; and a GaN layer bonded to the support substrate, using an ion implantation separation method; growing at least one GaN-based semiconductor layer on the GaN layer of the composite substrate; and removing the support substrate of the composite substrate by dissolving the support substrate. Thus, the method of manufacturing a GaN-based semiconductor device is provided by which GaN-based semiconductor devices having excellent characteristics can be manufactured at a high yield ratio. | 05-30-2013 |
20130149847 | METHOD OF MANUFACTURING GaN-BASED FILM AND COMPOSITE SUBSTRATE USED THEREFOR - The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate including a support substrate dissoluble in hydrofluoric acid and a single crystal film arranged on a side of a main surface of the support substrate, a coefficient of thermal expansion in the main surface of the support substrate being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal, forming a GaN-based film on a main surface of the single crystal film arranged on the side of the main surface of the support substrate, and removing the support substrate by dissolving the support substrate in hydrofluoric acid. Thus, the method of manufacturing a GaN-based film capable of efficiently obtaining a GaN-based film having a large main surface area, less warpage, and good crystallinity, as well as a composite substrate used therefor are provided. | 06-13-2013 |
20130168693 | PROTECTIVE-FILM-ATTACHED COMPOSITE SUBSTRATE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A protective-film-attached composite substrate includes a support substrate, an oxide film disposed on the support substrate, a semiconductor layer disposed on the oxide film, and a protective film protecting the oxide film by covering a portion that is a part of the oxide film and covered with none of the support substrate and the semiconductor layer. A method of manufacturing a semiconductor device includes the steps of: preparing the protective-film-attached composite substrate; and epitaxially growing, on the semiconductor layer of the protective-film-attached composite substrate, at least one functional semiconductor layer causing an essential function of a semiconductor device to be performed. Thus, there are provided a protective-film-attached composite substrate having a large effective region where a high-quality functional semiconductor layer can be epitaxially grown, and a method of manufacturing a semiconductor device in which the protective-film-attached composite substrate is used. | 07-04-2013 |
20130175543 | COMPOSITE GaN SUBSTRATE, METHOD FOR MANUFACTURING COMPOSITE GaN SUBSTRATE, GROUP III NITRIDE SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR DEVICE - A composite GaN substrate of the present invention includes: a conductive GaN substrate having a specific resistance of less than 1 Ωcm; and a semi-insulative GaN layer disposed on the conductive GaN substrate, having a specific resistance of 1×10 | 07-11-2013 |