| Patent application number | Description | Published |
|---|
| 20080218913 | TUNNELING MAGNETORESISTIVE ELEMENT WHICH INCLUDES Mg-O BARRIER LAYER AND IN WHICH NONMAGNETIC METAL SUBLAYER IS DISPOSED IN ONE OF MAGNETIC LAYERS - In a tunneling magnetoresistive element, an insulating barrier layer is made of Mg—O, and a first pinned magnetic layer has a laminated structure in which a nonmagnetic metal sublayer made of Ta is interposed between a lower ferromagnetic sublayer and an upper ferromagnetic sublayer. The nonmagnetic metal sublayer has an average thickness of about 1 Å or more and about 5 Å or less. | 09-11-2008 |
| 20080225443 | TUNNELING MAGNETIC SENSING ELEMENT AND METHOD FOR PRODUCING SAME - A free magnetic layer has a laminated structure in which a first magnetic sublayer composed of Co—Fe or Fe and a second magnetic sublayer composed of Co—Fe—B or Fe—B are formed, in that order, on an insulating barrier layer composed of Mg—O. This effectively improves the rate of change in resistance (ΔR/R) compared with the related art. | 09-18-2008 |
| 20080261082 | TUNNELING MAGNETORESISTIVE ELEMENT INCLUDING MULTILAYER FREE MAGNETIC LAYER HAVING INSERTED NONMAGNETIC METAL SUBLAYER - A tunnel magnetoresistive element includes a laminate including a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer. The insulating barrier layer is composed of Ti—Mg—O or Ti—O. The free magnetic layer includes an enhancement sublayer, a first soft magnetic sublayer, a nonmagnetic metal sublayer, and a second soft magnetic sublayer. For example, the enhancement sublayer is composed of Co—Fe, the first soft magnetic sublayer and the second soft magnetic sublayer are composed of Ni—Fe, and the nonmagnetic metal sublayer is composed of Ta. The total thickness of the average thickness of the enhancement sublayer and the average thickness of the first soft magnetic sublayer is in the range of 25 to 80 angstroms. Accordingly, the tunneling magnetoresistive element can consistently have a higher rate of resistance change than before. | 10-23-2008 |
| 20100055452 | TUNNELING MAGNETIC SENSING ELEMENT INCLUDING MGO FILM AS INSULATING BARRIER LAYER - A tunneling magnetic sensing element includes a laminate in which an underlayer, a seed layer, an antiferromagnetic layer, a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer are laminated in order from below. The insulating barrier layer is made of Mg—O. The underlayer is made of Ti, and the seed layer is made of one selected from a group consisting of Ni—Fe—Cr and Ru. | 03-04-2010 |
| 20100270865 | MAGNETIC COUPLING TYPE ISOLATOR - A magnetic coupling type isolator includes: a magnetic field generator for generating an external magnetic field by an input signal; a magnetoresistive element for detecting the external magnetic field and converting the detected magnetic field into an electric signal, the magnetoresistive element being electrically insulated from the magnetic field generator and positioned in a location capable of being magnetically coupled so as to be overlapped with the magnetic field generator as seen in a top plan view; and first and second shield films overlapped with the magnetic field generator and the magnetoresistive element as seen in a top plan view, wherein a distance between the magnetoresistive element and the second shield film is set to 8 to 100 μm. | 10-28-2010 |
| 20100270866 | MAGNETIC COUPLING TYPE ISOLATOR - A magnetic coupling type isolator includes: a magnetic field generator for generating an external magnetic field by an input signal; a magnetoresistive element for detecting the external magnetic field and converting the detected magnetic field into an electric signal, the magnetoresistive element being electrically insulated from the magnetic field generator and positioned in a location capable of being magnetically coupled so as to be overlapped with the magnetic field generator as seen in a top plan view; first and second shield films overlapped with the magnetic field generator and the magnetoresistive element as seen in a top plan view; and a third shield film disposed to surround the magnetoresistive element. | 10-28-2010 |
| 20110080165 | MAGNETIC BALANCE TYPE CURRENT SENSOR - A magnetic balance type current sensor measures a measured current which flows in a feedback coil when electrical conduction is provided by a voltage difference according to an induction magnetic field from the measured current and an equilibrium state is reached in which the induction magnetic field and a cancel magnetic field cancel each other. Sensor elements in a pair are arranged at positions with magnetic field from the measured current. The magnetization direction of the pinned magnetic layer in the magnetoresistive effect element of one sensor element is aligned in a forward direction with respect to the magnetic field formed by the measured current. The magnetization direction of the pinned magnetic layer in the magnetoresistive effect element of the other sensor element is aligned in a reverse direction with respect to the magnetic field formed by the measured current. | 04-07-2011 |
| 20110156798 | ALPS GREEN DEVICES CO., LTD. - Magnetoresistive effect elements R | 06-30-2011 |
| Patent application number | Description | Published |
|---|
| 20080278863 | TUNNELING MAGNETIC SENSING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A tunneling magnetic sensing element includes: a pinned magnetic layer whose direction of magnetization is pinned in one direction; an insulating barrier layer; and a free magnetic layer whose direction of magnetization changes in response to an external magnetic field. The pinned magnetic layer, the insulating barrier layer and the free magnetic layer are deposited in the named order. A first protective layer composed of a platinum-group element is disposed on the free magnetic layer, and a second protective layer composed of Ti is disposed on the first protective layer. | 11-13-2008 |
| 20080285180 | MAGNETIC SENSING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - An underlying layer is composed of Co—Fe—B that is an amorphous magnetic material. Thus, the upper surface of the underlying layer can be taken as a lower shield layer-side reference position for obtaining a gap length (GL) between upper and lower shields, resulting in a narrower gap than before. In addition, since the underlying layer has an amorphous structure, the underlying layer does not adversely affect the crystalline orientation of individual layers to be formed thereon, and the surface of the underlying layer has good planarizability. Accordingly, PW50 (half-amplitude pulse width) and SN ratio can be improved more than before without causing a decrease in rate of change in resistance (Δ R/R) or the like, thereby achieving a structure suitable for increasing recording density. | 11-20-2008 |
| 20090115551 | Noise filter - The invention can provide a miniaturized noise filter. The noise filter for reducing noise comprises a coil with a conductive wire ( | 05-07-2009 |
| 20100007566 | Vehicle Roof Mount Antenna - The vehicle roof mount antenna to be detachably mounted on a vehicle roof is mainly constituted by an antenna cover | 01-14-2010 |
| 20100055501 | TUNNELING MAGNETIC SENSING ELEMENT - A tunneling magnetic sensing element includes a laminate in which a pinned magnetic layer having a magnetization direction pinned, an insulating barrier layer, and a free magnetic layer having a magnetization direction variable with an external magnetic field are laminated in order from below. The insulating barrier layer is made of Mg—O. The free magnetic layer has a soft magnetic layer and an enhanced layer disposed between the soft magnetic layer and the insulating barrier layer to have a spin polarization ratio higher than the soft magnetic layer. An insertion magnetic layer made of one selected from Co—Fe—B, Co—B, Fe—B, and Co—Fe is inserted into the soft magnetic layer in a direction parallel to the interface of each layer constituting the laminate, and the soft magnetic layer is divided into multiple layers in a thickness direction through the insertion magnetic layer. | 03-04-2010 |
| Patent application number | Description | Published |
|---|
| 20080258617 | Organic electroluminescence device and manufacturing method therefor - An organic EL device in accordance with the invention has a structure in which a first electrode, a light-emitting layer, and a second electrode are formed on a substrate in this order, and light from the light-emitting layer is emitted to an exterior of the device via the second electrode. | 10-23-2008 |
| 20080274660 | Electroluminescent display device, method for manufacturing the same, and electronic equipment - A transparent cathode electrode technology for an electroluminescent display device having a top emission structure, provides a top emission type electroluminescent display device and a method to manufacture the same. Oxidation of a substrate film can be reduced or prevented during the film formation of a metal oxide. Electronic equipment including this display device is also provided. A first electrode, a function layer including a luminescent layer, and a transparent second electrode made of a metal oxide are laminated on the substrate in that order from the lower surface. At this time, the oxygen concentration in the second electrode is made to vary in the film thickness direction, and the oxygen concentration in the vicinity of the interface between the second electrode and the function layer is made lower than the average oxygen concentration in the second electrode. | 11-06-2008 |
| 20080315761 | Light-emitting device having openings in electrode - The invention provides a light-emitting device, a manufacturing method thereof, and an electronic apparatus which can improve the emission efficiency of light, obtain uniform brightness within a display surface in high reliability, in particular, and which can suppress lowering of the emission efficiency of light due to various wiring line structures, even though a large screen is performed. In a light-emitting device having a light-emitting element in which a first electrode on a base substrate, a functional layer having a light-emitting layer, and a second electrode are sequentially deposited, the first electrode and the second electrode are reflective, and the second electrode has an opening through which light from the light-emitting layer passes. | 12-25-2008 |
| 20110148944 | DISPLAY DEVICE - A display device includes a light emitting functional layer disposed between a first and second substrates; a first pixel which emits light to the second substrate and has a first pixel electrode disposed between the light emitting functional layer and the first substrate, a second electrode disposed between the light emitting functional layer and the second substrate, and a first reflecting layer disposed between the first pixel electrode and the first substrate; a second pixel which emits light to the first substrate side and has a second pixel electrode disposed between the light emitting functional layer and the first substrate, a second electrode disposed between the light emitting functional layer and the second substrate, and a second reflecting layer disposed between the second electrode and the second substrate; and a driving element which drives the first and second pixel electrodes is disposed above first substrate. | 06-23-2011 |
