Patent application number | Description | Published |
20100190003 | Dielectric thin film, method of manufacturing same, and applications thereof - A dielectric thin film and a method of manufacturing the same, wherein the manufacture of a dielectric thin film having a composition represented by Ba | 07-29-2010 |
20120055372 | DIELECTRIC-THIN-FILM FORMING COMPOSITION, METHOD OF FORMING DIELECTRIC THIN FILM, AND DIELECTRIC THIN FILM FORMED BY THE METHOD - A dielectric-thin-film forming composition for forming a BST dielectric thin film, includes a liquid composition for forming a thin film which takes a form of a mixed composite metal oxide in which a composite oxide B including Cu (copper) is mixed into a composite metal oxide A expressed by a formula: Ba | 03-08-2012 |
20120100330 | LIQUID AND METHOD FOR REMOVING CSD COATED FILM, FERROELECTRIC THIN FILM AND METHOD FOR PRODUCING THE SAME - Coated film is removed at an outer peripheral edge of a substrate before heat-treating in CSD method by spraying or dropping liquid for removing CSD coated film including water and organic solvent mixed in a weight ratio of 50:50 to 0:100, in which the organic solvent is one or more selected from the group consisting of β-diketones, β-ketoesters, polyhydric alcohol, carboxylic acids, alkanolamines, α-hydroxy carboxylic acid, α-hydroxy carbonyl derivatives, and hydrazone derivatives. | 04-26-2012 |
20120224297 | PROCESS OF FORMING DIELECTRIC THIN FILM AND THIN FILM CAPACITOR HAVING SAID DIELECTRIC THIN FILM - In this process of forming a dielectric thin film, when a dielectric thin film represented by Ba | 09-06-2012 |
20120295099 | METHOD FOR PRODUCING FERROELECTRIC THIN FILM - A method for producing a ferroelectric thin film comprising: coating a composition for forming a ferroelectric thin film on a base electrode of a substrate having a substrate body and the base electrode that has crystal faces oriented in the (111) direction, calcining the coated composition, and subsequently performing firing the coated composition to crystallize the coated composition, and thereby forming a ferroelectric thin film on the base electrode, wherein the method includes formation of a orientation controlling layer b coating the composition on the base electrode, calcining the coated composition, and firing the coated composition, where an amount of the composition coated on the base electrode is controlled such that a thickness of the orientation controlling layer after crystallization is in a range of 35 nm to 150 nm, and thereby controlling the preferential crystal orientation of the orientation controlling layer in the (100) plane. | 11-22-2012 |
20120295100 | METHOD FOR PRODUCING FERROELECTRIC THIN FILM - A method for producing a ferroelectric thin film comprising: coating a composition for forming a ferroelectric thin film on a base electrode of a substrate having a substrate body and the base electrode that has crystal daces oriented in the (111) direction, calcining the coated composition, and subsequently performing firing the coated composition to crystallize the coated composition, and thereby forming a ferroelectric thin film on the base electrode, wherein the method includes formation of an orientation controlling layer by coating the composition on the base electrode, calcining the coated composition, and firing the coated composition, where an amount of the composition coated on the base electrode is controlled such that a thickness of the orientation controlling layer after crystallization is in a range of 5 nm to 30 nm, and thereby controlling the preferential crystal orientation of the orientation controlling layer to be in the (110) plane. | 11-22-2012 |
20130252436 | DIELECTRIC THIN FILM, METHOD OF MANUFACTURING SAME, AND APPLICATIONS THEREOF - A dielectric thin film and a method of manufacturing the same, wherein the manufacture of a dielectric thin film having a composition represented by Ba | 09-26-2013 |
20140212576 | DIELECTRIC THIN FILM-FORMING COMPOSITION AND METHOD OF FORMING DIELECTRIC THIN FILM USING THE SAME - In a thin film capacitor or the like, a dielectric thin film-forming composition capable of improving leakage current characteristics; and a method of forming a dielectric thin film using this composition are provided. Regarding a dielectric thin film-forming composition for forming a dielectric thin film, the dielectric thin film is formed of a barium strontium titanate (BST)-based complex perovskite film, and the composition is doped with aluminum (Al). In addition, a doping amount of the aluminum (Al) is in a range of 0.1 at % to 15 at % with respect to 100 at % of perovskite A site atoms contained in the composition. | 07-31-2014 |
20140284515 | FERRITE THIN FILM-FORMING COMPOSITION AND METHOD OF FORMING FERRITE THIN FILM - This ferrite thin film-forming composition is a composition for forming a thin film of NiZn ferrite, CuZn ferrite, or NiCuZn ferrite using a sol-gel method, and the composition includes: metal raw materials; and a solvent containing N-methyl pyrrolidone, wherein a ratio of an amount of N-methyl pyrrolidone to 100 mass % of the total amount of the composition is in a range of 30 to 60 mass %. | 09-25-2014 |
20140287136 | LaNiO3 THIN FILM-FORMING COMPOSITION AND METHOD OF FORMING LaNiO3 THIN FILM USING THE SAME | 09-25-2014 |
20140287251 | PZT-BASED FERROELECTRIC THIN FILM-FORMING COMPOSITION, METHOD OF PREPARING THE SAME, AND METHOD OF FORMING PZT-BASED FERROELECTRIC THIN FILM USING THE SAME - This PZT-based ferroelectric thin film-forming composition comprises: a PZT precursor; a diol; one of polyvinyl pyrrolidones and a polyethylene glycol; water, and a linear monoalcohol having 6 to 12 carbon chains. In this composition, a concentration of the PZT precursor in 100 wt % of the composition is 17 wt % to 35 wt % in terms of oxides, the ratio of the diol to 100 wt % of the composition is 16 wt % to 56 wt %, the ratio of the one of the polyvinyl pyrrolidones and the polyethylene glycol to 1 mol of the PZT precursor is 0.01 mol to 0.25 mol, the ratio of the water to 1 mol of the PZT precursor is 0.5 mol to 3 mol, and the ratio of the linear monoalcohol to 100 wt % of the composition is 0.6 wt % to 10 wt %. | 09-25-2014 |
20140288219 | FERROELECTRIC THIN FILM-FORMING SOL-GEL SOLUTION - This ferroelectric thin film-forming sol-gel solution contains: a PZT-based compound; a high-molecular compound used to adjust the viscosity containing polyvinyl pyrrolidone; and an organic dopant containing N-methyl pyrrolidone, in which the amount of the PZT-based compound is greater than or equal to 17 mass % in terms of oxides, the molar ratio (PZT-based compound:polyvinyl pyrrolidone) of the polyvinyl pyrrolidone to the PZT-based compound is 1:0.1 to 1:0.5 in terms of monomers, and the amount of the organic dopant containing N-methyl pyrrolidone in the sol-gel solution is 3 mass % to 13 mass %. | 09-25-2014 |
20140288233 | METHOD OF PRODUCING FERROELECTRIC THIN FILM-FORMING COMPOSITION AND APPLICATION OF THE SAME - A method of preparing a ferroelectric thin film-forming composition, specifically, a method of preparing a PZT thin film-forming composition includes: a step of allowing composition precursor raw materials, which contain PZT precursor substances at a concentration of 23 to 38 mass % in terms of oxides in 100 mass % of the composition precursor raw materials, and a high-molecular compound to react with each other to obtain a PZT thin film-forming composition precursor; and a step of aging the PZT thin film-forming composition precursor at a temperature of 0 to 10° C. for at least 30 days. | 09-25-2014 |
20140293505 | PZT-BASED FERROELECTRIC THIN FILM AND METHOD OF FORMING THE SAME - A PZT-based ferroelectric thin film is formed by coating a PZT-based ferroelectric thin film-forming composition on a lower electrode of a substrate one or two or more times, pre-baking the composition, and baking the composition to be crystallized, and this thin film includes PZT-based particles having an average particle size in a range of 500 nm to 3000 nm when measured on a surface of the thin film, in which heterogeneous fine particles having an average particle size of 20 nm or less, which are different from the PZT-based particles, are precipitated on a part or all of the grain boundaries on the surface of the thin film. | 10-02-2014 |
20140294720 | LiCoO2 FILM-FORMING PRECURSOR SOLUTION AND METHOD OF FORMING LiCoO2 FILM USING THE SAME | 10-02-2014 |
20140295172 | METHOD OF FORMING PNbZT FERROELECTRIC THIN FILM - A method includes: coating a composition for forming a PZT ferroelectric film not containing Nb on a lower electrode | 10-02-2014 |
20140295197 | PZT-BASED FERROELECTRIC THIN FILM-FORMING COMPOSITION, METHOD OF PREPARING THE SAME, AND METHOD OF FORMING PZT-BASED FERROELECTRIC THIN FILM USING THE SAME - In a PZT-based ferroelectric thin film-forming composition, a ratio of a PZT precursor to 100 wt % of the composition is 17 to 35 wt % in terms of oxides, a ratio of a diol to 100 wt % of the composition is 16 to 56 wt %, a ratio of a polyvinyl pyrrolidone or a polyethylene glycol to 1 mol of the PZT precursor is 0.01 to 0.25 mol in terms of monomers, a ratio of the water to 1 mol of the PZT precursor is 0.5 to 3 mol, and the composition does not further contain a linear monoalcohol having 6 to 12 carbon chains which has a ratio of 0.6 to 10 wt % with respect to 100 wt % of the composition. | 10-02-2014 |