| Patent application number | Description | Published |
|---|
| 20090008765 | CHIP EMBEDDED SUBSTRATE AND METHOD OF PRODUCING THE SAME - A method of producing a chip embedded substrate is disclosed. This method comprises a first step of mounting a semiconductor chip on a first substrate on which a first wiring is formed; and a second step of joining the first substrate with a second substrate on which a second wiring is formed. In the second step, the semiconductor chip is encapsulated between the first substrate and the second substrate and electrical connection is made between the first wiring and the second wiring so as to form multilayered wirings connected to the semiconductor chip. | 01-08-2009 |
| 20090072011 | METHOD OF MOUNTING CONDUCTIVE BALL AND CONDUCTIVE BALL MOUNTING APPARATUS - A method of mounting a conductive ball according to the present invention includes the steps of, disposing a mask on a substrate including connection pads, the mask having opening portions corresponding to the connection pad, supplying conductive balls on the mask, arranging the conductive balls on the connection pad of the substrate through the opening portions of the mask by moving the conductive balls to one end side of the mask by ball moving member (a brush), and removing excess conductive balls remaining on a region of the mask where the opening portions are provided, by bonding the excess conductive balls to a ball removal film (adhesive film). | 03-19-2009 |
| 20090081867 | METHOD OF MANUFACTURING SUBSTRATE - The present disclosure relates to a method of manufacturing a substrate. The method includes: (a) forming through holes by applying an anisotropic etching to a silicon substrate from a first surface of the silicon substrate; (b) forming a first insulating film to cover the first surface of the silicon substrate, surfaces of the silicon substrate exposed from the through holes, and a second surface of the silicon substrate opposite to the first surface; (c) forming an opening in a portion of the first insulating film provided on the second surface, the portion of the first insulating film corresponding to an area in which the through holes are formed; (d) etching the silicon substrate using the first insulating film provided on the second surface as a mask, thereby forming a cavity in the silicon substrate; and (e) removing the first insulating film. | 03-26-2009 |
| 20090130838 | METHOD OF FORMING CONDUCTIVE BUMPS - A method of forming a conductive bump of the present invention, includes the steps of, preparing a substrate including a connection pad and a protection insulating layer, in which an opening portion is provided on the connection pad, on a surface layer side, arranging a first conductive ball, at least an outer surface portion of which is made of solder, on the connection pad in the opening portion of the protection insulating layer, filling a solder layer in the opening portion by applying a reflow heating to the first conductive ball, arranging a second conductive ball on the solder layer, and obtaining a conductive bump which protrudes from an upper surface of the protection insulating layer, by joining the solder layer and the second conductive ball by a reflow heating. | 05-21-2009 |
| 20100101849 | ELECTRONIC COMPONENT BUILT-IN SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing an electronic component built-in substrate, includes the steps of mounting a chip-like electronic component having a connection pad and a metal protection layer formed on a whole of one surface to cover the connection pad, on a wiring substrate to direct the connection pad upward; embedding the electronic component with the insulating layer; processing the insulating layer in a thickness direction to leave the insulating layer in a side of the electronic component and to expose the metal protection layer of the electronic component; and forming an upper wiring layer having an in-chip wiring part which is connected to the connection pad and contacts an upper surface of the electronic component and is constructed by an underlying metal pattern layer formed by patterning the metal protection layer and a conductive pattern layer formed thereon, and an extended wiring part which is connected to the in-chip wiring part to extend onto the insulating layer and is formed by an identical layer as the conductive pattern layer. | 04-29-2010 |
| 20100109160 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor device, includes the steps of preparing a semiconductor wafer having a connection pad, forming an insulating dam layer in which an opening portion is provided in an area including the connection pad, on the semiconductor wafer, and forming a bump electrode by mounting a conductive ball on the connection pad in the opening portion of the insulating dam layer. | 05-06-2010 |
| 20100155862 | PACKAGE FOR ELECTRONIC COMPONENT, MANUFACTURING METHOD THEREOF AND SENSING APPARATUS - A package for electronic component comprises a rectangular package body having a flat cut surface to be abutted on a flat mounting surface of a mounting substrate, a first side surface intersecting with the flat cut surface, and a first notch part formed at a boundary between the flat cut surface and the first side surface, an electronic component installed in the package body, and a first pad electrically connected to the electronic component and formed on an inner wall surface of the first notch part. | 06-24-2010 |
| 20110147951 | WIRING SUBSTRATE AND SEMICONDUCTOR DEVICE - A wiring substrate includes a wiring layer, an insulating layer formed on the wiring layer, a connection pad formed on the insulating layer, and a via conductor formed to penetrate the insulating layer, and connecting the wiring layer and the connection pad, wherein the wiring layer located under the connection pad is formed to have via receiving electrode portion whose area is smaller than an area of the connection pad, and a wiring portion separated from the via receiving electrode portion, in an area corresponding to the connection pad, and the via receiving electrode portion is connected to the connection pad via the via conductor. | 06-23-2011 |
