| Patent application number | Description | Published |
|---|
| 20090032907 | Method for Producing GaxIn1-xN(0<x>) Crystal Gaxin1-xn(0<x<1) Crystalline Substrate, Method for Producing GaN Crystal, GaN Crystalline Substrate, and Product - It seems that a conventional method for producing a GaN crystal by using HVPE has a possibility that the crystallinity of a GaN crystal can be improved by producing a GaN crystal at a temperature higher than 1100° C. However, such a conventional method has a problem in that a quartz reaction tube ( | 02-05-2009 |
| 20090155989 | NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF PRODUCING SAME - A nitride semiconductor crystal substrate is produced by forming a network mask repeating a closed loop unit shape upon an undersubstrate, growing a nitride semiconductor crystal in vapor phase, producing convex facet hills covered with facets on exposed parts Π, forming outlining concavities on mask-covered parts | 06-18-2009 |
| 20090189253 | METHOD OF PRODUCING A NITRIDE SEMICONDUCTOR DEVICE AND NITRIDE SEMICONDUCTOR DEVICE | 07-30-2009 |
| 20090194848 | METHOD FOR MANUFACTURING GALLIUM NITRIDE CRYSTAL AND GALLIUM NITRIDE WAFER - There is provided a method for fabricating a gallium nitride crystal with low dislocation density, high crystallinity, and resistance to cracking during polishing of sliced pieces by growing the gallium nitride crystal using a gallium nitride substrate including dislocation-concentrated regions or inverted-polarity regions as a seed crystal substrate. Growing a gallium nitride crystal | 08-06-2009 |
| 20110031534 | PROCESS FOR PRODUCING Si(1-v-w-x)CwAlxNv BASE MATERIAL, PROCESS FOR PRODUCING EPITAXIAL WAFER, Si(1-v-w-x)CwAlxNv BASE MATERIAL, AND EPITAXIAL WAFER - There are provided a Si | 02-10-2011 |
| 20110039071 | METHOD OF MANUFACTURING A Si(1-v-w-x)CwAlxNv SUBSTRATE, METHOD OF MANUFACTURING AN EPITAXIAL WAFER, Si(1-v-w-x)CwAlxNv SUBSTRATE, AND EPITAXIAL WAFER - There are provided a method for manufacturing a Si | 02-17-2011 |
| 20110042788 | PROCESS FOR PRODUCING Si(1-v-w-x)CwAlxNv BASE MATERIAL, PROCESS FOR PRODUCING EPITAXIAL WAFER, SI(1-v-w-x)CwAlxNv BASE MATERIAL, AND EPITAXIAL WAFER | 02-24-2011 |
| 20110104438 | AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE CRYSTAL, AND OPTICAL COMPONENT - A method of producing an Al | 05-05-2011 |
| 20110109973 | AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE CRYSTAL, AND OPTICAL LENS - A method of producing an Al | 05-12-2011 |
| 20110110840 | METHOD FOR PRODUCING GROUP III-NITRIDE CRYSTAL AND GROUP III-NITRIDE CRYSTAL - A method for producing a group III-nitride crystal having a large thickness and high quality and a group III-nitride crystal are provided. A method for producing a group III-nitride crystal | 05-12-2011 |
| 20110114016 | AlGaN BULK CRYSTAL MANUFACTURING METHOD AND AlGaN SUBSTRATE MANUFACTURING METHOD - There is provided an AlGaN bulk crystal manufacturing method for manufacturing a high-quality AlGaN bulk crystal having a large thickness. Also, there is provided an AlGaN substrate manufacturing method for manufacturing a high-quality AlGaN substrate. The AlGaN bulk crystal manufacturing method includes the following steps: First, a support substrate composed of Al | 05-19-2011 |
| 20110134509 | WAVELENGTH CONVERSION ELEMENT AND METHOD FOR MANUFACTURING WAVELENGTH CONVERSION ELEMENT - A wavelength conversion element having an improved property-maintaining life and a method for manufacturing the wavelength conversion element are provided. A wavelength conversion element | 06-09-2011 |
| 20110156213 | METHOD OF MANUFACTURING NITRIDE SUBSTRATE, AND NITRIDE SUBSTRATE - A method of manufacturing a nitride substrate includes the following steps. Firstly, a nitride crystal is grown. Then, the nitride substrate including a front surface is cut from the nitride crystal. In the step of cutting, the nitride substrate is cut such that an off angle formed between an axis orthogonal to the front surface and an m-axis or an a-axis is greater than zero. When the nitride crystal is grown in a c-axis direction, in the step of cutting, the nitride substrate is cut from the nitride crystal along a flat plane which passes through a front surface and a rear surface of the nitride crystal and does not pass through a line segment connecting a center of a radius of curvature of the front surface with a center of a radius of curvature of the rear surface of the nitride crystal. | 06-30-2011 |
