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| 20090152242 | PLASMA TREATMENT APPARATUS AND PLASMA TREATMENT METHOD - The invention provides a plasma treatment apparatus or a plasma treatment method having a high productivity while maintaining a stable treatment performance. In a plasma treatment apparatus feeding a plurality of gases fed into the treatment chamber and treating a sample arranged within the treatment chamber by a plasma formed by using the plurality of gases, the plasma treatment apparatus has a plurality of feeding gas lines in which the plurality of gases respectively pass, a plurality of gas flow rate regulators respectively arranged on the feeding gas lines and respectively regulating flow rates of the plurality of gases, and a testing gas flow path coupled to the gas line so as to be arranged outside the treatment chamber and arranging a tester testing a flow rate of a gas from a gas flow rate controller therein, and the plasma treatment apparatus tests the gas flow rate regulator on a gas line corresponding to the gas which is not used for the treatment in the plurality of gases in parallel with the treatment. | 06-18-2009 |
| 20110144792 | SEMICONDUCTOR PROCESSING SYSTEM AND PROGRAM - In a processing system of a linear tool in which plural carrying robots are arranged in carrying mechanical units to which processing modules are coupled and a processing target is delivered and received between the plural carrying robots, in the case where there are plural carrying routes on which the processing target is carried, the present invention provides a technique for determining the carrying route on which the highest throughput can be obtained. | 06-16-2011 |
| 20110217148 | VACUUM PROCESSING APPARATUS AND PROGRAM - The present invention provides an efficient transferring control method in a vacuum processing apparatus of a linear tool in which plural vacuum robots are arranged in transferring mechanical units to which process chambers are connected and processing-target members are passed and received among the plural vacuum robots. In addition, the present invention provides a vacuum processing apparatus in which there are provided plural controlling methods, and a unit which determines whether rates of the transferring robots are to be controlled or rates of the process chambers are to be controlled on the basis of processing time of each processing-target member and switches the controlling method in accordance with a site whose rate is controlled. | 09-08-2011 |
| 20110218662 | VACUUM PROCESSING APPARATUS AND PROGRAM - Provided is a method for controlling efficient transferring operations in a vacuum processing apparatus with a linear tool. In the apparatus, plural transferring robots are arranged in transferring mechanism units in which plural process chambers are connected with each other, and to-be-processed wafers are received and passed between plural transferring robots. As the transferring robots is far from the load lock, the number of transferring operations to the process chambers is set larger, the number of times of continuous transferring operations to the process chambers is set as small as possible, and an odd number of times of continuous transferring operations to buffer rooms is set, by a destination determination unit and operation control rules. Further, transferring operations are performed based on the destination determination unit and the operation control rules. | 09-08-2011 |
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| 20110110751 | VACUUM PROCESSING SYSTEM AND VACUUM PROCESSING METHOD OF SEMICONDUCTOR PROCESSING SUBSTRATE - A vacuum processing system of a semiconductor processing substrate and a vacuum processing method using the same comprises an atmospheric transfer chamber having a plurality of cassette stands for transferring a wafer, a lock chamber for storing the wafer transferred from the atmospheric transfer chamber, a first vacuum transfer chamber to which the wafer from the lock chamber is transferred, a transfer intermediate chamber connected to the first vacuum transfer chamber, a second vacuum transfer chamber connected to the transfer intermediate chamber, at least one vacuum processing chamber connected to the first vacuum transfer chamber, and two or more vacuum processing chambers connected to a rear side of the second vacuum transfer chamber, wherein the number of vacuum processing chambers connected to the first vacuum transfer chamber is smaller than the number of vacuum processing chambers connected to the second vacuum transfer chamber, or the number of use of vacuum processing chambers connected to the first vacuum transfer chamber is restricted to one. | 05-12-2011 |
| 20110110752 | VACUUM PROCESSING SYSTEM AND VACUUM PROCESSING METHOD OF SEMICONDUCTOR PROCESSING SUBSTRATE - The invention provides a vacuum processing system of a semiconductor processing substrate and a vacuum processing method using the same, comprising an atmospheric transfer chamber having a plurality of cassette stands, a lock chamber arranged on a rear side of the atmospheric transfer chamber, and a first vacuum transfer chamber connected to a rear side of the lock chamber, wherein the first vacuum transfer chamber does not have any vacuum processing chamber connected thereto and has transfer intermediate chambers connected thereto, and the transfer intermediate chambers have subsequent vacuum transfer chambers connected thereto, and wherein the wafers are transferred via the lock chamber to the first vacuum transfer chamber to be processed in each of the subsequent vacuum processing chambers, which are further transferred via any of the transfer intermediate chambers connected to the first vacuum transfer chamber to the subsequent vacuum transfer chambers, and the respective wafers transferred to the subsequent vacuum transfer chambers other than the first vacuum transfer chamber are transferred to the respective vacuum processing chambers connected to each of the vacuum processing chambers and processed therein. | 05-12-2011 |
