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Hidaka, Osaka
Atsushi Hidaka, Osaka JP
| Patent application number | Description | Published |
|---|---|---|
| 20100012026 | EVAPORATION SUPPLY APPARATUS FOR RAW MATERIAL AND AUTOMATIC PRESSURE REGULATING DEVICE USED THEREWITH - An evaporation supply apparatus for raw material used in semiconductor manufacturing includes a source tank in which a raw material is pooled; a flow rate control device that supplies carrier gas at a regulated flow rate into the source tank; a primary piping path for feeding mixed gas G | 01-21-2010 |
| 20110100483 | GAS SUPPLY APPARATUS EQUIPPED WITH VAPORIZER - An energy-saving, downsized gas supply apparatus equipped with a vaporizer is provided, wherein the gas supply apparatus is capable of stably and easily performing highly accurate gas flow rate control without requiring rigorous temperature control on the vaporizer side. The present invention pertains to a gas supply apparatus equipped with a vaporizer that includes (a) a liquid receiving tank; (b) a vaporizer that vaporizes liquid; (c) a high-temperature type pressure type flow rate control device that adjusts a flow rate of a vaporized gas; and (d) heating devices that heat the vaporizer, the high-temperature type pressure type flow rate control device, and desired portions of pipe passages connected to the vaporizer and the high-temperature type pressure type flow rate control device. | 05-05-2011 |
Kazuhisa Hidaka, Osaka JP
| Patent application number | Description | Published |
|---|---|---|
| 20080260624 | Process for Production of Composition - The invention provides a process for production of a composition comprising a perovskite structure compound, the process comprising: a first process to heat a hydrous oxide of at least one B group element selected from the group consisting of Ti, Zr, Hf, and Sn at a temperature within a range of 80 to 300° C. in the presence of an aqueous medium so as to dehydrate the hydrous oxide; and a second process to heat a reaction product obtained in the first process and a hydroxide of at least one A group element selected from the group consisting of Ba, Sr, Ca, Mg and Pb at a temperature within a range of 100 to 300° C. in the presence of an aqueous medium. | 10-23-2008 |
Koichiro Hidaka, Osaka JP
| Patent application number | Description | Published |
|---|---|---|
| 20100233348 | FOOD OR DRINK AND METHOD OF PRODUCTION THEREOF - The present invention provides a method of producing a food or drink containing one or more components extracted from a raw material by using fruit(s), vegetable(s), bean(s), nut(s), mushroom(s), alga(e) or tea(s) as the raw material, which comprises the following steps: freezing the raw material; grinding the frozen matter at a controlled temperature; and dipping the ground matter in a solvent and thus extracting one or more components of the raw material. It is preferable that the temperature in the grinding step is controlled to a level not higher than the brittle temperature of an aroma component, a colorant or an essential oil which can be extracted from the raw material. According to the production method of the present invention, the obtained food or drink can sufficiently contain a desired component contained in fruit(s) or vegetable(s). | 09-16-2010 |
Masahito Hidaka, Osaka JP
| Patent application number | Description | Published |
|---|---|---|
| 20110031786 | CENTRIFUGAL AIR BLOWER AND AUTOMOBILE SEAT - A centrifugal multi-blade impeller ( | 02-10-2011 |
| 20110050051 | MOUNTING STRUCTURE AND MOTOR - A mounting structure | 03-03-2011 |
Nobuyuki Hidaka, Osaka JP
| Patent application number | Description | Published |
|---|---|---|
| 20080224878 | Relay - A light guide part ( | 09-18-2008 |
Shigemi Hidaka, Osaka JP
| Patent application number | Description | Published |
|---|---|---|
| 20090029826 | Controller of work vehicle - Various works of a tractor or wheel loader that require frequent operations of start, stop, and switching between the forward drive and reverse drive that are repeated alternately can be performed very easily. The control apparatus comprises a speed change sensor that detects the step-on amount of a speed change pedal, an actuator that regulates the swash plate angle of a hydraulic pump based on the detection value of the speed change sensor, a transmission output unit rotation sensor that detects the revolution speed of an output shaft, and a control unit. The control unit performs control such that when the speed change pedal is not stepped on, a brake is applied to the travel wheels and both the forward drive clutch and the reverse drive clutch are disengaged, and also performs control such that when the transmission drive output detected with the transmission output unit rotation sensor is not more than that the forward-reverse drive switching speed, either the forward drive clutch or the reverse drive clutch is engaged as the speed change pedal is stepped on. When the engagement of the forward drive clutch or reverse drive clutch is confirmed, the brake of the travel wheels is released. | 01-29-2009 |
Yasuyoshi Hidaka, Osaka JP
| Patent application number | Description | Published |
|---|---|---|
| 20090218014 | Method for Producing Duplex Stainless Steel Seamless Pipe - The present invention is to provide a method for producing duplex stainless steel seamless pipe in which a duplex stainless steel billet can be inhibited from generating an oxide scale on the surface thereof during heating and the generation of outer surface flaw can also be prevented. The billet is heated in the a heating furnace for 1.5 hours or more and 4.0 hours or less at a heating temperature of 1250° C. or more and 1320° C. or less while regulating the average concentration of sulfur dioxide (SO | 09-03-2009 |
| 20090301151 | LUBRICANT COMPOSITION FOR HOT METAL WORKING AND METHOD OF HOT METAL WORKING USING THE SAME - The present invention provides a lubricant composition for hot metal working which is capable of inhibiting generation of flaws on the surface of materials to be provided for hot metal working, and provides a method of hot metal working. The invention provides a lubricant composition for hot metal working comprising a plurality of glass frits respectively having different softening point from each other. | 12-10-2009 |
| 20100018281 | METHOD OF MANUFACTURING PLUG USED TO PIERCE AND ROLL METAL MATERIAL, METHOD OF MANUFACTURING METAL PIPE AND PLUG USED TO PIERCE AND ROLL METAL MATERIAL - A plug material having a prescribed shape is prepared, the prepared plug material is thermally treated in a heat treatment atmosphere that contains at least 1.0 vol. % oxygen at a heat treatment temperature of at least 950° C. and less than 1050° C. and thus a plug having an oxide scale layer | 01-28-2010 |
Yoshiharu Hidaka, Osaka JP
| Patent application number | Description | Published |
|---|---|---|
| 20100144146 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - The step a) of forming a noble metal film or a metal film containing a noble metal on a semiconductor substrate containing silicon or a conductive film containing silicon is performed, the step b) of forming a silicide film containing a noble metal on the semiconductor substrate or the conductive film is performed, after the step a), by performing thermal treatment to the semiconductor substrate, the step c) of activating unreacted part of the noble metal using a first chemical solution is performed after the step b), and the step d) of dissolving the unreacted part of the noble metal activated in the step c) is performed. The step d) is performed within 30 minutes or less after the step c). | 06-10-2010 |
| 20100178763 | METHOD AND APPARATUS FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes the steps of: (a) forming an alloy film containing a precious metal on a substrate having a semiconductor layer or on a conductive film formed on the substrate; (b) heat-treating the substrate to allow the precious metal to react with silicon forming a silicide film containing the precious metal on the substrate or the conductive film; (c) removing an unreacted portion of the alloy film with a first chemical solution after the step (b); (d) forming a silicon oxide film on the top surface of the silicide film including a portion underlying a residue of the precious metal by exposing the substrate to an oxidative atmosphere; and (e) dissolving the residue of the precious metal with a second chemical solution. | 07-15-2010 |
| 20100178764 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device, includes the steps of (a) forming a metal film containing a precious metal on a substrate having a semiconductor layer containing silicon or on a conductive film containing silicon formed on the substrate, (b) after step (a), heat-treating the substrate to allow the precious metal to react with silicon to form a silicide film containing the precious metal on the substrate or the conductive film, (c) after step (b), forming an oxide film on a portion of the silicide film underlying an unreacted portion of the precious metal using a first chemical solution, and (d) dissolving the unreacted portion of the precious metal using a second chemical solution. | 07-15-2010 |
| 20100304554 | PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE - In a production method for a semiconductor device relating to the present invention, first, a pattern of a resist film made of organic polymers is formed on a semiconductor substrate. Next, impurity ions with 1×10 | 12-02-2010 |