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Hidaka, Kanagawa
Daisuke Hidaka, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20100201822 | INFORMATION PROCESSING APPARATUS - An information processing apparatus includes: a detection mechanism that includes a transparent substrate on which a detection electrode pattern is provided in biaxial directions and detects, with one of main surface sides of the transparent substrate being an input operation surface, a position on the input operation surface within the biaxial space that an object has touched, the transparent substrate being capable of transmitting near-infrared light; a to-be-authenticated-object placement portion provided in the vicinity of the input operation surface and on which the object is placed as an object to be authenticated; a first light source to irradiate the near-infrared light onto the object to be authenticated; and a photographic camera that is provided on the other one of the main surface sides of the transparent substrate and photographs the object to be authenticated onto which the near-infrared light has been irradiated via the transparent substrate. | 08-12-2010 |
Hiroyuki Hidaka, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20100062769 | Base Station Apparatus, Wireless Communication Terminal Apparatus, Communication Method and Computer Readable Medium Thereof - A base station used in a communication system including the base station for broadcasting service information to a wireless communication terminal, and the wireless communication terminal for receiving the service information during an idle state, the base station includes: a storing section for storing information of other base stations existing nearby the base station and service compliant information indicative of whether the other base stations are compliant with transmission of the service information. | 03-11-2010 |
Kenichi Hidaka, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20090003081 | Non-volatile memory and method of manufacturing same - The number of process steps for manufacturing a non-volatile memory is reduced while the performance of the non-volatile memory is improved. The non-volatile memory has a memory cell in which first, second and third P-type diffusion regions are formed in an N-type well, a select gate is formed via a select-gate insulating film over a channel between the first and second P-type diffusion regions, and a floating gate is formed via a floating-gate insulating film over a channel between the second and third P-type diffusion regions. The non-volatile memory has a peripheral circuit in which fourth and fifth P-type diffusion regions are formed in an N-type well, and a peripheral-circuit gate is formed via a peripheral-circuit gate insulating film over a channel between the fourth and fifth P-type diffusion regions. The film thickness of the floating-gate insulating film is greater than that of the select-gate insulating film and peripheral-circuit gate insulating film. | 01-01-2009 |
| 20090184350 | Non-volatile semiconductor memory device - A non-volatile semiconductor memory device having a memory cell in which operating potentials are few and the scale of the peripheral circuitry is reduced includes a select transistor having a source/drain on both sides of a channel of a semiconductor substrate and having a gate electrode disposed on the channel via a thick gate insulating film; an element isolation region formed on the semiconductor substrate in an area adjacent to the select transistor; an antifuse adjacent to the element isolation region, having a lower electrode formed on the semiconductor substrate and having an upper electrode disposed on the semiconductor substrate in an area between the element isolation region and lower electrode via a thin gate insulating film; and a connection contact electrically connecting the source and upper electrode and contacting the source and the upper electrode. | 07-23-2009 |
| 20110108923 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device has a conventional NMOS transistor and an NMOS transistor functioning as an anti-fuse element and having an n type channel region. The conventional NMOS transistor is equipped with an n type extension region and a p type pocket region, while the anti-fuse element is not equipped with an extension region and a pocket region. This makes it possible to improve the performance of the transistor and at the same time improve the characteristics of the anti-fuse element after breakdown of its gate dielectric film. | 05-12-2011 |
| 20110122672 | Non-volatile semiconductor memory device - A non-volatile semiconductor memory device having a memory cell in which operating potentials are few and the scale of the peripheral circuitry is reduced includes a select transistor having a source/drain on both sides of a channel of a semiconductor substrate and having a gate electrode disposed on the channel via a thick gate insulating film; an element isolation region formed on the semiconductor substrate in an area adjacent to the select transistor; an antifuse adjacent to the element isolation region, having a lower electrode formed on the semiconductor substrate and having an upper electrode disposed on the semiconductor substrate in an area between the element isolation region and lower electrode via a thin gate insulating film; and a connection contact electrically connecting the source and upper electrode and contacting the source and the upper electrode. | 05-26-2011 |
Kiyoshi Hidaka, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20110234860 | SOLID-STATE IMAGING DEVICE - According to one embodiment, a correction-parameter storing unit corrects a position of a captured image captured by an image sensor, and an image-position correcting unit corrects the position of the captured image for each pixel based on the correction parameter. | 09-29-2011 |
Kouta Hidaka, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20090265170 | EMOTION DETECTING METHOD, EMOTION DETECTING APPARATUS, EMOTION DETECTING PROGRAM THAT IMPLEMENTS THE SAME METHOD, AND STORAGE MEDIUM THAT STORES THE SAME PROGRAM - An audio feature is extracted from audio signal data for each analysis frame and stored in a storage part. Then, the audio feature is read from the storage part, and an emotional state probability of the audio feature corresponding to an emotional state is calculated using one or more statistical models constructed based on previously input learning audio signal data. Then, based on the calculated emotional state probability, the emotional state of a section including the analysis frame is determined. | 10-22-2009 |
Makoto Hidaka, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20080224386 | Sheet conveying device, sheet finisher, sheet feeding device, image forming apparatus, and sheet conveying method - A sheet conveying device includes entrance rollers and registration rollers. The entrance rollers convey a sheet received from delivery rollers to the registration rollers. The registration rollers correct skew of the sheet. A conveying path between the delivery rollers and the registration rollers is equal to or slightly longer than a length of a sheet in a maximum allowable size for skew correction in a conveying direction in which the sheet is conveyed on the conveying path. | 09-18-2008 |
Masato Hidaka, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20100264125 | WELDING LOWER ELECTRODE DEVICE - An object of the present invention is to reduce the size of an entire device by simplifying a device configuration, and also accurately measure the stroke position of a rod. A lower electrode | 10-21-2010 |
Takahiro Hidaka, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20100015449 | COMPOSITION FOR FORMING GAS-BARRIER MATERIAL, GAS-BARRIER MATERIAL, A METHOD OF PRODUCING THE SAME, AND GAS-BARRIER PACKING MATERIAL - A composition for forming a gas-barrier material, comprising a polycarboxylic acid-type polymer (A) and at least a bifunctional alicyclic epoxy compound (B). The composition for forming a gas-barrier material features excellent gas-barrier property, retort resistance and flexibility, can be cured at a low temperature in a short period of time without affecting the plastic base material, and contributes to improving the productivity. | 01-21-2010 |
| 20110091743 | METHOD OF PRODUCING GAS-BARRIER LAMINATED MEMBER - A method of producing a gas-barrier laminated member having a gas-barrier layer formed by crosslinking the carboxyl groups of a polycarboxylic acid polymer with multivalent metal ions. The method comprises forming a layer (A) containing an alkaline compound of a multivalent metal on at least one surface of a plastic base material, applying a solution (b) obtained by dissolving a polycarboxylic acid polymer in a solvent containing at least water onto the layer (A) that contains the alkaline compound of the multivalent metal, and removing the solvent by a heat treatment so that a metal-ionically crosslinked structure is formed with the multivalent metal ions among the carboxyl groups in the solution (b). The gas-barrier laminated member has excellent adhesion to the base material, gas-barrier property, retort resistance and flexibility, and is efficiently produced by only being heated at a low temperature for a short period of time through a decreased number of simplified steps. | 04-21-2011 |
Yuko Hidaka, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20110008832 | METHODS FOR STABLY RETAINING FOREIGN GENES IN CELLS - A method for preparing a protein or peptide encoded by a foreign gene by expressing a foreign gene, which comprises the steps of: preparing a recombinant vector comprising in an expressible state a gene encoding an aminoacyl-tRNA synthetase, in which a desired foreign gene has been inserted in an expressible state; preparing a mutant host cell or the like in which a chromosomal gene encoding an aminoacyl-tRNA synthetase has been knocked out; transforming the mutant host cell with the recombinant vector to obtain a transformant; and culturing the transformant to prepare the protein or peptide encoded by the foreign gene. It becomes possible to provide a novel means for permitting the retention of a recombinant DNA cloning vector without employing an antibiotic and without limiting the composition of the medium; and a method for preparing a protein or peptide encoded by a foreign gene by using the means. | 01-13-2011 |