| Patent application number | Description | Published |
|---|
| 20080286970 | Method for producing a semiconductor component and a semiconductor component produced according to the method - A method for producing a semiconductor component includes forming an n-doped layer in a p-doped layer of the semiconductor component, wherein the n-doped layer comprises at least one of: a sieve-like layer or a network-like layer. The method also includes porously etching the p-doped layer between the material of the n-doped layer to form a top electrode, and forming a cavity below the n-doped layer. | 11-20-2008 |
| 20090008749 | Device made of single-crystal silicon - A device made of single-crystal silicon having a first side, a second side which is situated opposite to the first side, and a third side which extends from the first side to the second side, the first side and the second side each extending in a | 01-08-2009 |
| 20090079037 | Micromechanical component and method for producing a micromechanical component - A micromechanical component, in particular a micromechanical sensor, having a first wafer and a second wafer is provided, the first wafer having at least one structural element, and the second wafer having at least one mating structural element, and, in addition, the structural element and the mating structural element are designed in such a way that a relative displacement of the first wafer relative to the second wafer parallel to a main extension plane of the first wafer essentially leads to compressive loading or tensile loading between the structural element and the mating structural element. | 03-26-2009 |
| 20090100932 | ACCELERATION SENSOR - An acceleration sensor having a mass which is movably supported outside its center of gravity, first electrodes on the mass and second electrodes located at a distance therefrom forming a capacitive sensor in order to determine a change in position of the mass as a function of time. At least one spring element which generates a restoring force when the mass is deflected from its neutral position is provided on the side of the mass facing the capacitive sensor. The mass may be obtained by being exposed from a material layer, and the mass is surrounded, at least at its side faces, by this material. | 04-23-2009 |
| 20090162619 | METHOD FOR PRODUCING A MICROMECHANICAL COMPONENT AND MIRCOMECHANICAL COMPONENT - A method is provided for producing a micromechanical component and a micromechanical component is provided, particularly a microphone, a micro-loudspeaker or a pressure sensor (an absolute pressure sensor or a relative pressure sensor) having a substrate and having a diaphragm pattern, for the production of the diaphragm pattern, process steps being provided that are compatible only with a circuit that is monolithically integrated into or on the substrate, a sacrificial pattern applied onto the substrate being removed for the production of the diaphragm pattern. | 06-25-2009 |
| 20090206422 | Micromechanical diaphragm sensor having a double diaphragm - A method for producing a micromechanical diaphragm sensor, and a micromechanical diaphragm sensor produced with the method. The micromechanical diaphragm sensor has at least one first diaphragm as well as a second diaphragm, which is disposed essentially on top of the first diaphragm. Furthermore, the micromechanical diaphragm sensor has a first cavity and a second cavity, which is essentially disposed above the first cavity. | 08-20-2009 |
| 20100025786 | Method for Manufacturing a Diaphragm on a Semiconductor Substrate and Micromechanical Component Having Such a Diaphragm - A method for manufacturing a diaphragm, on a semiconductor substrate, includes the method operations or tasks of a) providing a semiconductor substrate, b) producing trenches in the semiconductor substrate, webs made of semiconductor substrate remaining between the trenches, c) producing an oxide layer on the walls of the trenches with the aid of a thermal oxidation method, d) producing access openings in a cover layer produced in a preceding method operation or task on the semiconductor substrate, to expose the semiconductor substrate in the area of the webs, e) isotropic etching of the semiconductor substrate exposed in method operation or task d) using a method selective to the oxide layer and to the cover layer, at least one cavity being produced in the webs below the cover layer, which is laterally delimited by the oxide layer of at least one trench, and f) depositing a sealing layer to seal the access openings in the cover layer. | 02-04-2010 |
| 20100089868 | METHOD FOR PRODUCING A MICROMECHANICAL COMPONENT HAVING A FILLER LAYER AND A MASKING LAYER - A method for producing a micromechanical component is proposed, a trench structure being substantially completely filled up by a first filler layer, and a first mask layer being applied on the first filler layer, on which in turn a second filler layer and a second mask layer are applied. A micromechanical component is also proposed, the first filler layer filling up the trench structure of the micromechanical component and at the same time forming a movable sensor structure. | 04-15-2010 |
| 20100133630 | METHOD FOR PRODUCING A MICROMECHANICAL COMPONENT HAVING A TRENCH STRUCTURE FOR BACKSIDE CONTACT - A method for manufacturing a micromechanical component is proposed. In this context, at least one trench structure having a depth less than the substrate thickness is to be produced in a substrate. In addition, an insulating layer and a filler layer are produced or applied on a first side of the substrate. The filler layer comprises a filler material that substantially fills up the trench structure. A planar first side of the substrate is produced by way of a subsequent planarization within a plane of the filler layer or of the insulating layer or of the substrate. A further planarization of the second side of the substrate is then accomplished. A micromechanical component that is manufactured in accordance with the method is also described. | 06-03-2010 |
| 20100164023 | MICROMECHANICAL COMPONENT AND CORRESPONDING PRODUCTION METHOD - A micromechanical component having a conductive substrate, a first conductive layer provided above the substrate and that forms, above a cavity provided in the substrate, an elastically deflectable diaphragm region of monocrystalline silicon and an adjacent peripheral region, a circuit trace level provided above the first conductive layer in a manner that is electrically insulated from the first conductive layer, the circuit trace level having above the diaphragm region a first electrode region and having above the peripheral region a first connection region electrically connected to the same, and a second conductive layer that is provided above the circuit trace level, the second conductive layer having above the diaphragm region a second electrode region that is electrically insulated from the first electrode region, and having above the peripheral region a second connection region electrically insulated from the second electrode region and electrically connected to the first connection region. Also provided is a suitable production method. | 07-01-2010 |
| 20100258884 | Method for attaching a first carrier device to a second carrier device and micromechanical components - A method for attaching a first carrier device to a second carrier device includes forming at least one first bond layer and/or solder layer on a first exterior of the first carrier device, a partial surface being framed by the at least one first bond layer and/or solder layer, and placing the first carrier device on the second carrier device and fixedly bonding or soldering the first carrier device to the second carrier device. The at least one first bond layer and/or solder layer includes a first cover area which is larger than a first contact area. | 10-14-2010 |
| 20100307247 | MICROMECHANICAL ACCELERATION SENSOR AND METHOD FOR MANUFACTURING AN ACCELERATION SENSOR - A micromechanical acceleration sensor for a transport device, in particular a motor vehicle, having a seismic mass. The seismic mass includes an auxiliary mass, and the auxiliary mass is composed of a different material than the seismic mass. Also described is a method for manufacturing an acceleration sensor for a transport device, in particular a motor vehicle, having a seismic mass, an auxiliary mass being provided on/in the seismic mass when forming the seismic mass. Also described is an assembly, apparatus, or device, in particular for a motor vehicle. The assembly, apparatus, or device has a micromechanical acceleration sensor as described, or an acceleration sensor manufactured as described. | 12-09-2010 |
| 20110014794 | DEVICE MADE OF SINGLE-CRYSTAL SILICON - A device made of single-crystal silicon having a first side, a second side which is situated opposite to the first side, and a third side which extends from the first side to the second side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the third side extending in a first area in a 111 plane of the single-crystal silicon. The third side extends in a second area in a 110 plane of the single-crystal silicon. Furthermore, a production method for producing a device made of single-crystal silicon is described. | 01-20-2011 |
