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Heo, US
Charles Heo, Plano, TX US
| Patent application number | Description | Published |
|---|---|---|
| 20110029651 | DYNAMIC SERVER CONSOLIDATION AND RATIONALIZATION MODELING TOOL - A method and system for providing efficient and flexible techniques for modeling technical and economic benefits of consolidating information technology (IT) systems, hardware, software, network, and other infrastructure are described. The system includes a data processing system configured to receive data from a user. The system also includes an input collection system communicatively coupled to the data processing system, with the input collection system designed to organize, convert, and sort the data to generate baseline server information. In addition, the system includes an optimization system communicatively coupled to the data processing system, with the optimization system designed to generate one or more server consolidation models based on the baseline server information. Further, based on the generated one or more server consolidation models, a recommendation can be generated. | 02-03-2011 |
Deuk Heo, Pullman, WA US
| Patent application number | Description | Published |
|---|---|---|
| 20100036211 | SYSTEMS AND METHODS FOR MEASURING PHYSIOLOGICAL PARAMETERS OF A BODY - Systems and methods for measuring physiological parameters of a body are described. In some embodiments, the system employs a physiological monitoring device capable of measuring, amplifying, digitizing and transmitting events ranging in frequency from 0 (DC) to 10 kHz. | 02-11-2010 |
Dongho Heo, Fremont, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090050271 | MASK TRIMMING - A method for etching a dielectric layer is provided. A patterned mask with mask features is formed over a dielectric layer. The mask has isolated areas and dense areas of the mask features. The mask is trimmed by a plurality of cycles, where each cycle includes depositing a deposition layer, and selectively etching the deposition layer and the patterned mask. The selective etching selectively trims the isolated areas of the mask with respect to the dense areas of the mask. The dielectric layer is etched using the thus trimmed mask. The mask is removed. | 02-26-2009 |
| 20090050603 | MASK TRIMMING WITH ARL ETCH - A method for etching a dielectric layer disposed below an antireflection layer (ARL) is provided. The method comprises (a) forming a patterned mask with mask features over the ARL, the mask having isolated areas and dense areas of the mask features, (b) trimming and opening, and (c) etching the dielectric layer using the trimmed mask. The trimming and opening comprises a plurality of cycles, where each cycle includes (b1) a trim-etch phase which etches the ARL in a bottom of the mask features and selectively trims the isolated areas of the mask with respect to the dense areas, and (b2) a deposition-etch phase which deposits a deposition layer on the mask while further etching the ARL in the bottom of the mask features. The trimming and opening result in a net trimming of the mask in the isolated areas. | 02-26-2009 |
| 20090286400 | PLASMA PROCESS WITH PHOTORESIST MASK PRETREATMENT - A method for etching features in a dielectric layer through a photoresist (PR) mask is provided. The PR mask is patterned using laser light having a wavelength not more than 193 nm. The PR mask is pre-treated with a noble gas plasma, and then a plurality of cycles of a plasma process is provided. Each cycle includes a deposition phase that deposits a deposition layer over the PR mask, the deposition layer covering a top and sidewalls of mask features of the PR mask, and a shaping phase that shapes the deposition layer deposited over the PR mask. | 11-19-2009 |
| 20110030895 | MASK TRIMMING - A method for etching a dielectric layer is provided. A patterned mask with mask features is formed over a dielectric layer. The mask has isolated areas and dense areas of the mask features. The mask is trimmed by a plurality of cycles, where each cycle includes depositing a deposition layer, and selectively etching the deposition layer and the patterned mask. The selective etching selectively trims the isolated areas of the mask with respect to the dense areas of the mask. The dielectric layer is etched using the thus trimmed mask. The mask is removed. | 02-10-2011 |
Jaeyeong Heo, Somerville, MA US
| Patent application number | Description | Published |
|---|---|---|
| 20120027937 | Cyclic Metal Amides and Vapor Deposition Using Them - Novel cyclic amides containing tin or lead are disclosed. These cyclic amides can be used for atomic layer deposition or chemical vapor deposition of tin or lead as well as their oxides, sulfides, selenides, nitrides, phosphides, carbides, silicides or borides or other compounds. Tin(IV) oxide, SnO | 02-02-2012 |
Jaeyeong Heo, Cambridge, MA US
| Patent application number | Description | Published |
|---|---|---|
| 20110159286 | METHOD OF MANUFACTURING SILICA NANOWIRES - Provided is a method of manufacturing silica nanowires. The method includes: providing an object to be processed into a reaction chamber; supplying a precursor having a heteroleptic structure, which has a chemical forma SiA | 06-30-2011 |
Jin-Hwa Heo US
| Patent application number | Description | Published |
|---|---|---|
| 20110045647 | METHODS OF FORMING NON-VOLATILE MEMORY DEVICES - A non-volatile memory device includes a dielectric layer between a charge storage layer and a substrate. Free bonds of the dielectric layer can be reduced to reduce/prevent charges from leaking through the free bonds and/or from being trapped by the free bonds. As a result, data retention properties and/or durability of a non-volatile memory device may be enhanced. | 02-24-2011 |
Jungseok Heo, Glenview, IL US
| Patent application number | Description | Published |
|---|---|---|
| 20080213916 | Allosterically Catalyzed Signal Amplification in Chemical and Biological Sensing - Coordination complexes having at least two structural conformations are disclosed. The coordination complexes contain at least one metal center and at least one hemi-labile ligand, and change structural conformations due to the presence or absence of allosteric effectors. Methods of detecting an analyte using the coordination complexes are also disclosed. | 09-04-2008 |
| 20090211445 | AMORPHOUS INFINITE COORDINATION POLYMER MICROPARTICLES AND USE FOR HYDROGEN STORAGE - Infinite coordination polymeric (ICP) materials are disclosed. One ICP material has a formula | 08-27-2009 |
Youn-Hyoung Heo US
| Patent application number | Description | Published |
|---|---|---|
| 20080232322 | METHOD AND APPARATUS FOR RECEIVING A CONTROL CHANNEL IN A MOBILE COMMUNICATION SYSTEM - A method and apparatus for receiving control information in a mobile communication system. A controller acquires information indicating variable Control Channel Elements (CCEs) allocated for first User Equipments (UEs) among CCEs constituting control channels, acquires information indicating fixed CCEs allocated for second UEs, selects the variable CCEs when a UE receiving the control information is included in the first UEs, and selects the fixed CCEs when the UE is included in the second UEs. A control information receiver receives the control information through the selected CCEs. | 09-25-2008 |
Yunseok Heo, Ann Arbor, MI US
| Patent application number | Description | Published |
|---|---|---|
| 20100233799 | INTEGRATED MICROFLUIDIC CONTROL EMPLOYING PROGRAMMABLE TACTILE ACTUATORS - Microfluidic devices having active features such as valves, peristaltic pumps, and mixing portions are fabricated to have a thin elastomeric membrane over the active features. The active features are activated by a tactile actuator external to the membrane, for example, a commercial Braille display. The display may be computer controlled, for example by simple text editor software, to activate individual Braille protrusions or a plurality of protrusions to actuate the active portions of the microfluidic device. Integral devices can incorporate the tactile actuators in a single device, but still external to the membrane. | 09-16-2010 |
Yun Seok Heo, Ann Arbor, MI US
| Patent application number | Description | Published |
|---|---|---|
| 20100247384 | Microfluidic cell culture device and method for using same - Microfluidic devices for cell culturing and methods for using the same are disclosed. One device includes a substrate and membrane. The substrate includes a reservoir in fluid communication with a passage. A bio-compatible fluid may be added to the reservoir and passage. The reservoir is configured to receive and retain at least a portion of a cell mass. The membrane acts as a barrier to evaporation of the bio-compatible fluid from the passage. A cover fluid may be added to cover the bio-compatible fluid to prevent evaporation of the bio-compatible fluid. | 09-30-2010 |
| 20100323439 | MICROFLUIDIC CELL CULTURE DEVICE - Microfluidic devices for cell culturing and methods for using the same are disclosed. One device includes a substrate and membrane. The substrate includes a reservoir in fluid communication with a passage. A bio-compatible fluid may be added to the reservoir and passage. The reservoir is configured to receive and retain at least a portion of a cell mass. The membrane acts as a barrier to evaporation of the bio-compatible fluid from the passage. A cover fluid may be added to cover the bio-compatible fluid to prevent evaporation of the bio-compatible fluid. | 12-23-2010 |
| 20100323447 | MICROFLUIDIC CELL CULTURE DEVICE AND METHOD FOR USING SAME - Microfluidic devices for cell culturing and methods for using the same are disclosed. One device includes a substrate and membrane. The substrate includes a reservoir in fluid communication with a passage. A bio-compatible fluid may be added to the reservoir and passage. The reservoir is configured to receive and retain at least a portion of a cell mass. The membrane acts as a barrier to evaporation of the bio-compatible fluid from the passage. A cover fluid may be added to cover the bio-compatible fluid to prevent evaporation of the bio-compatible fluid. | 12-23-2010 |