| Patent application number | Description | Published |
|---|
| 20080294875 | PARALLEL PROCESSOR FOR EFFICIENT PROCESSING OF MOBILE MULTIMEDIA - Provided is a parallel processor for supporting a floating-point operation. The parallel processor has a flexible structure for easy development of a parallel algorithm involving multimedia computing, requires low hardware cost, and consumes low power. To support floating-point operations, the parallel processor uses floating-point accumulators and a flag for floating-point multiplication. Using the parallel processor, it is possible to process a geometric transformation operation in a 3-dimensional (3D) graphics process at low cost. Also, the cost of a bus width for instructions can be minimized by a partitioned Single-Instruction Multiple-Data (SIMD) method and a method of conditionally executing instructions. | 11-27-2008 |
| 20100156680 | METHOD OF DRIVING BIT STREAM PROCESSOR - Provided is a bit stream processor using a reduced table lookup. The bit stream processor includes a bit stream exclusive register in a general purpose register in order to process data of a variable length effectively. Additionally, the bit stream processor an instruction of a table lookup method to which a prefix method is applied and a bit stream exclusive instruction in order to reduce an entire memory size. | 06-24-2010 |
| 20100162016 | LOW POWER CONSUMPTION PROCESSOR - Provided is a low power consumption processor. The processor includes: a plurality of blocks; a memory storing instructions that control each of the plurality of blocks; and a multi power controller generates a signal that activates at least one of the plurality of blocks according to an address storing the instruction, and provides a normal power voltage or a reduction power voltage in response to the activation signal. | 06-24-2010 |
| Patent application number | Description | Published |
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| 20080203488 | CMOS semiconductor device and method of fabricating the same - Example embodiments provide a complementary metal-oxide semiconductor (CMOS) semiconductor device and a method of fabricating the CMOS semiconductor device. The CMOS semiconductor device may include gates in the nMOS and pMOS areas, polycrystalline silicon (poly-Si) capping layers, metal nitride layers underneath the poly-Si capping layers, and a gate insulating layer underneath the gate. The metal nitride layers of the nMOS and pMOS areas may be formed of the same type of material and may have different work functions. Since a metal gate is formed of identical types of metal nitride layers, a process may be simplified, yield may be increased, and a higher-performance CMOS semiconductor device may be obtained. | 08-28-2008 |
| 20090072719 | Passivation film and electronic display device including the passivation film - Example embodiments relate to a passivation film for protecting an electronic device. The passivation film may include a myelin layer. The myelin layer may have a thickness of about 100 Å to 10 μm. The passivation film may further include an inorganic film. Example embodiments also relate to an electronic display device including a substrate, an organic light-emitting device (OLED) disposed on the substrate, and a myelin layer disposed on the organic light-emitting device. A plurality of myelin layers and a plurality of inorganic films may be alternately stacked on the organic light-emitting device in lieu of a single myelin layer. | 03-19-2009 |
| 20090173927 | Storage node, phase change memory device and methods of manufacturing and operating the same - Provided are a storage node, phase change memory device and methods of manufacturing and operating the same. The storage node may include an electrode, a phase change layer, and an anti-diffusion layer between the electrode and the phase change layer and including a silicide compound. The phase change memory device may include the storage node and a switching device connected to the storage node. | 07-09-2009 |
| 20100006820 | SILICA NANOWIRE COMPRISING SILICON NANODOTS AND METHOD OF PREPARING THE SAME - Provided are a silica nanowire that includes silicon nanodots and a method of preparing the same. The silica nanowire has excellent capacitance characteristics and improved light absorption ability, and thus can be effectively used in a variety of fields, such as various semiconductor devices including CTF memory, image sensors, photodetectors, light emitting diodes, laser diodes, and the like. | 01-14-2010 |
