Patent application number | Description | Published |
20080290370 | Semiconductor devices and methods of manufacturing thereof - Semiconductor devices and methods of manufacturing thereof are disclosed. In a preferred embodiment, a method of manufacturing a semiconductor device includes providing a workpiece, and forming a recess in the workpiece. The recess has a depth having a first dimension. A first semiconductive material is formed in the recess to partially fill the recess in a central region to a height having a second dimension. The second dimension is about one-half or greater of the first dimension. A second semiconductive material is formed over the first semiconductive material in the recess to completely fill the recess, the second semiconductive material being different than the first semiconductive material. | 11-27-2008 |
20080303060 | Semiconductor devices and methods of manufacturing thereof - Semiconductor devices and methods of manufacturing thereof are disclosed. In a preferred embodiment, a method of manufacturing a semiconductor device includes providing a semiconductor wafer, forming a first material on the semiconductor wafer, and affecting the semiconductor wafer with a manufacturing process. The manufacturing process inadvertently causes a portion of the first material to be removed. The portion of the first material is replaced with a second material. | 12-11-2008 |
20090039442 | Semiconductor Devices and Methods of Manufacture Thereof - Semiconductor devices and methods of manufacture thereof are disclosed. In a preferred embodiment, a method of manufacturing a semiconductor device includes providing a semiconductor wafer, forming at least one isolation structure within the semiconductor wafer, and forming at least one feature over the semiconductor wafer. A top portion of the at least one isolation structure is removed, and a liner is formed over the semiconductor wafer, the at least one feature, and the at least one isolation structure. A fill material is formed over the liner. The fill material and the liner are removed from over at least a portion of a top surface of the semiconductor wafer. | 02-12-2009 |
20090289379 | Methods of Manufacturing Semiconductor Devices and Structures Thereof - Methods of manufacturing semiconductor devices and structures thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming recesses in a first region and a second region of a workpiece. The first region of the workpiece is masked, and the recesses in the second region of the workpiece are filled with a first semiconductive material. The second region of the workpiece is masked, and the recesses in the first region of the workpiece are filled with a second semiconductive material. | 11-26-2009 |
20090294807 | Methods of Fabricating Transistors and Structures Thereof - Methods of fabricating transistors, semiconductor devices, and structures thereof are disclosed. In one embodiment, a method of fabricating a transistor includes forming a gate dielectric over a workpiece, and forming a gate over the gate dielectric. Sidewall spacers are formed over the gate dielectric and the gate, the sidewall spacers comprising germanium oxide (GeO or GeO | 12-03-2009 |
20100065922 | Semiconductor Devices and Methods of Manufacture Thereof - Semiconductor devices and methods of manufacture thereof are disclosed. In a preferred embodiment, a method of manufacturing a semiconductor device includes providing a semiconductor wafer, forming at least one isolation structure within the semiconductor wafer, and forming at least one feature over the semiconductor wafer. A top portion of the at least one isolation structure is removed, and a liner is formed over the semiconductor wafer, the at least one feature, and the at least one isolation structure. A fill material is formed over the liner. The fill material and the liner are removed from over at least a portion of a top surface of the semiconductor wafer. | 03-18-2010 |
20100197093 | STRESS OPTIMIZATION IN DUAL EMBEDDED EPITAXIALLY GROWN SEMICONDUCTOR PROCESSING - A method of manufacturing dual embedded epitaxially grown semiconductor transistors is provided, the method including depositing a first elongated oxide spacer over first and second transistors of different types, depositing a first elongated nitride spacer on the first oxide spacer, depositing a first photoresist block on the nitride spacer above the first transistor, etching the first nitride spacer above the second transistor, implanting a first halo around the second transistor, etching a first recess in an outer portion of the first halo, stripping the first photoresist above the first transistor, forming a first epitaxially grown semiconductor material in the first recess, implanting a first extension in a top portion of the first material, depositing an elongated blocking oxide over the first and second transistors and first extension, depositing a second photoresist block on the blocking oxide above the second transistor and first extension, etching the blocking oxide and first nitride spacer above the first transistor, implanting a second halo around the first transistor, etching a second recess in an outer portion of the second halo, stripping the second photoresist above the second transistor, forming a second epitaxially grown semiconductor material in the second recess, implanting a second extension in a top portion of the second material, etching the blocking oxide above the second transistor, etching nitride caps from the first and second transistors, depositing a second elongated oxide spacer on the first and second transistors, depositing a second elongated nitride spacer on the second oxide spacer, etching the second nitride spacer to leave nitride sidewalls around gates of the first and second transistors, and implanting deep sources and drains in the first and second transistors. | 08-05-2010 |
20100197100 | Semiconductor Devices and Methods of Manufacturing Thereof - Semiconductor devices and methods of manufacturing thereof are disclosed. In a preferred embodiment, a method of manufacturing a semiconductor device includes providing a workpiece, and forming a recess in the workpiece. The recess has a depth having a first dimension. A first semiconductive material is formed in the recess to partially fill the recess in a central region to a height having a second dimension. The second dimension is about one-half or greater of the first dimension. A second semiconductive material is formed over the first semiconductive material in the recess to completely fill the recess, the second semiconductive material being different than the first semiconductive material. | 08-05-2010 |