| Patent application number | Description | Published |
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| 20100080071 | DATA STORAGE USING READ-MASK-WRITE OPERATION - Method and apparatus for writing data to a storage array, such as but not limited to an STRAM or RRAM memory array, using a read-mask-write operation. In accordance with various embodiments, a first bit pattern stored in a plurality of memory cells is read. A second bit pattern is stored to the plurality of memory cells by applying a mask to selectively write only those cells of said plurality corresponding to different bit values between the first and second bit patterns. | 04-01-2010 |
| 20100085110 | Integrated Circuit Active Power Supply Regulation - Method and apparatus for compensating for voltage fluctuations on a voltage supply line in an integrated circuit device. In accordance with some embodiments, the apparatus includes a voltage fluctuation sensor which senses a voltage on the supply line, and a compensation circuit comprising a switch and a charge storage device (CSD). The switch actively connects the CSD to the supply line when the voltage sensed by the voltage fluctuation sensor passes outside a predetermined voltage range. | 04-08-2010 |
| 20100091562 | TEMPERATURE DEPENDENT SYSTEM FOR READING ST-RAM - A memory device that includes at least one memory cell, the memory cell includes: a magnetic tunnel junction (MTJ); and a transistor, wherein the transistor is operatively coupled to the MTJ; a bit line; a source line; and a word line, wherein the memory cell is operatively coupled between the bit line and the source line, and the word line is operatively coupled to the transistor; a temperature sensor; and control circuitry, wherein the temperature sensor is operatively coupled to the control circuitry and the control circuitry and temperature sensor are configured to control a current across the memory cell. | 04-15-2010 |
| 20100095057 | NON-VOLATILE RESISTIVE SENSE MEMORY ON-CHIP CACHE - Various embodiments of the present invention are generally directed to an apparatus and associated method for a non-volatile resistive sense memory on-chip cache. In accordance with some embodiments, a processing circuit is formed on a first semiconductor substrate. A second semiconductor substrate is affixed to the first semiconductor substrate to form an encapsulated integrated chip package, wherein a non-volatile storage array of resistive sense memory (RSM) cells is formed on the second semiconductor substrate to cache data used by the processing circuit. | 04-15-2010 |
| 20100118588 | VOLTAGE REFERENCE GENERATION FOR RESISTIVE SENSE MEMORY CELLS - Various embodiments of the present invention are generally directed to an apparatus and associated method for generating a reference voltage for a resistive sense memory (RSM) cell, such as an STRAM cell. A dummy reference cell used to generate a reference voltage to sense a resistive state of an adjacent RSM cell. The dummy reference cell comprises a switching device, a resistive sense element (RSE) programmed to a selected resistive state, and a dummy resistor coupled to the RSE. A magnitude of the reference voltage is set in relation to the selected resistive state of the RSE and the resistance of the dummy resistor. | 05-13-2010 |
| 20100177552 | TABLE-BASED REFERENCE VOLTAGE CHARACTERIZATION SCHEME - Method and apparatus for reading data from a non-volatile memory cell, such as a modified STRAM cell. In some embodiments, at least a first and second memory cell are read for a plurality of resistance values that are used to select and store a voltage reference for each memory cell. | 07-15-2010 |
| 20100246250 | Pipeline Sensing Using Voltage Storage Elements to Read Non-Volatile Memory Cells - Various embodiments are generally directed to a method and apparatus for carrying out a pipeline sensing operation. In some embodiments, a read voltage from a first memory cell is stored in a voltage storage element (VSE) and compared to a reference voltage to identify a corresponding memory state of the first memory cell while a second read voltage from a second memory cell is stored in a second VSE. In other embodiments, bias currents are simultaneously applied to a first set of memory cells from the array while read voltages generated thereby are stored in a corresponding first set of VSEs. The read voltages are sequentially compared with at least one reference value to serially output a logical sequence corresponding to the memory states of the first set of memory cells while read voltages are stored for a second set of memory cells in a second set of VSEs. | 09-30-2010 |
| 20110026336 | Data Storage Using Read-Mask-Write Operation - Method and apparatus for writing data to a storage array, such as but not limited to an STRAM or RRAM memory array, using a read-mask-write operation. In accordance with various embodiments, a first bit pattern stored in a plurality of memory cells is read. A second bit pattern is stored to the plurality of memory cells by applying a mask to selectively write only those cells of said plurality corresponding to different bit values between the first and second bit patterns. | 02-03-2011 |
