| Patent application number | Description | Published |
|---|
| 20080205461 | Optical phase conjugation laser diode - A phase-conjugating resonator that includes a semiconductor laser diode apparatus that comprises a phase-conjugating array of retro-reflecting hexagon apertured hexahedral shaped corner-cube prisms, an electrically and/or optically pumped gain-region, a distributed bragg reflecting mirror-stack, a gaussian mode providing hemispherical shaped laser-emission-output metalized mirror. Wherein, optical phase conjugation is used to neutralize the phase perturbating contribution of spontaneous-emission, acoustic phonons, quantum-noise, gain-saturation, diffraction, and other intracavity aberrations and distortions that typically destabilize any stimulated-emission made to undergo amplifying oscillation within the inventions phase-conjugating resonator. Resulting in stablized high-power laser-emission-output into a single low-order fundamental transverse cavity mode and reversal of intra-cavity chirp that provides for high-speed internal modulation capable of transmitting data at around 20-Gigabits/ps. | 08-28-2008 |
| 20080305560 | Method for eliminating defects from semiconductor materials - Using a helium cryostat, the temperature for a substrate wafer(s) is reduced to 2.2 Kelvin over a period of twenty-four hours. Next, a soak segment will hold the temperature of the substrate wafer at 2.2 Kelvins for a period of ninety-six hours. At these low temperatures, alloys such as GaAs, InP, and GaP will form dipole molecular moments, which will re-align along lines of internal magnetic force as molecular bonds condense. Next the substrate wafer's temperature is ramped up to room temperature over a period of twenty-four hours. Next, the temperature of the substrate wafer is ramped up to assure that the temperature gradients made to occur within the wafer are kept low. Typically, a temper ramp up temperature will range between 300° F. to 1100° F. and depends upon the single crystal material used to construct the substrate wafer. Next, the substrate wafer undergoes a temper hold segment, which assures that the entire substrate wafer has had the benefit of the tempering temperature. A typical temper hold segment is around 3 hours and depends upon the material, thickness, and diameter size of the substrate wafer. | 12-11-2008 |
| 20090162948 | METHOD FOR ELIMINATING DEFECTS FROM SEMICONDUCTOR MATERIALS - Using a helium cryostat, the temperature for a substrate wafer(s) is reduced to 2.2 Kelvin over a period of twenty-four hours. Next, a soak segment will hold the temperature of the substrate wafer at 2.2 Kelvins for a period of ninety-six hours. At these low temperatures, alloys such as GaAs, InP, and GaP will form dipole molecular moments, which will re-align along lines of internal magnetic force as molecular bonds condense. Next the substrate wafer's temperature is ramped up to room temperature over a period of twenty-four hours. Next, the temperature of the substrate wafer is ramped up to assure that the temperature gradients made to occur within the wafer are kept low. Typically, a temper ramp up temperature will range between 300° F. to 1100° F. and depends upon the single crystal material used to construct the substrate wafer. Next, the substrate wafer undergoes a temper hold segment, which assures that the entire substrate wafer has had the benefit of the tempering temperature. A typical temper hold segment is around 3 hours and depends upon the material, thickness, and diameter size of the substrate wafer. | 06-25-2009 |
| 20090273839 | Method for constructing a phase conjugate mirror - A method that provides for a phase conjugate mirror | 11-05-2009 |
| 20100279446 | OPTICAL PHASE CONJUGATION LASER DIODE - A phase-conjugating resonator that includes a semiconductor laser diode apparatus that comprises a phase-conjugating array of retro-reflecting hexagon apertured hexahedral shaped corner-cube prisms, an electrically and/or optically pumped gain-region, a distributed bragg reflecting mirror-stack, a gaussian mode providing hemispherical shaped laser-emission-output metalized mirror. Wherein, optical phase conjugation is used to neutralize the phase perturbating contribution of spontaneous-emission, acoustic phonons, quantum-noise, gain-saturation, diffraction, and other intracavity aberrations and distortions that typically destabilize any stimulated-emission made to undergo amplifying oscillation within the inventions phase-conjugating resonator. Resulting in stablized high-power laser-emission-output into a single low-order fundamental transverse cavity mode and reversal of intra-cavity chirp that provides for high-speed internal modulation capable of transmitting data at around 20-Gigabits/ps. | 11-04-2010 |
