| Patent application number | Description | Published |
|---|
| 20090085055 | Method for Growing an Epitaxial Layer - A method for growing an epitaxial layer and devices obtained by that method are disclosed. The method starts by providing a growth substrate having a top surface characterized by a first thermal expansion coefficient (TEC). A mask having a plurality of openings therein is formed on the top surface of the growth substrate. The top surface of the growth substrate is exposed through the openings in the mask. A first epitaxial layer of a first material is grown on the exposed top surface of the openings to form discrete islands of the first material. The discrete islands from adjacent openings in the mask do not contact one another. The first epitaxial layer is characterized by a second TEC. The first and second TECs differ by more than 5 percent. The mask includes a mask material on which the first material will not nucleate. | 04-02-2009 |
| 20090096349 | CROSS FLOW CVD REACTOR - A cross flow chemical vapor deposition chamber can comprise an inlet duct having a generally rectangular cross-section and an outlet duct having a generally rectangular cross-section. The rectangular inlet duct and the rectangular outlet duct can facilitate laminar flow of reactant gases over a susceptor. Movable partitions can be configured to define a plurality of zones within the chamber. Each zone can contain a different reactant gas, concentration of reactant gas, and/or flow rate of reactant gas. Enhanced laminar flow can be provided, undesirable depletion of reactant gas can be mitigated, and enhanced control of reactant gases can be facilitated. | 04-16-2009 |
| 20090126631 | CHEMICAL VAPOR DEPOSITION REACTOR HAVING MULTIPLE INLETS - A chemical vapor deposition reactor has a wafer carrier which cooperates with a chamber of the reactor to facilitate laminar flow of reaction gas within the chamber and a plurality of injectors configured in flow controllable zones so as to mitigate depletion. | 05-21-2009 |
| 20090242924 | LIGHT EMITTING DIODES WITH SMOOTH SURFACE FOR REFLECTIVE ELECTRODE - A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 at a surface whereon the first electrode is formed. | 10-01-2009 |
| 20090272989 | LIGHT EMITTING DEVICE HAVING STACKED MULTIPLE LEDS - A light emitting device and method of producing the same is disclosed. The light emitting device includes a heterostructure having a plurality of light emitting diodes (LEDs) stacked one on top of another. | 11-05-2009 |
| 20100068381 | CHEMICAL VAPOR DEPOSITION REACTOR HAVING MULTIPLE INLETS - A chemical vapor deposition reactor has a wafer carrier which cooperates with a chamber of the reactor to facilitate laminar flow of reaction gas within the chamber and a plurality of injectors configured in flow controllable zones so as to mitigate depletion. | 03-18-2010 |
| 20100236483 | CHEMICAL VAPOR DEPOSITION REACTOR HAVING MULTIPLE INLETS - A chemical vapor deposition reactor has a wafer carrier which cooperates with a chamber of the reactor to facilitate laminar flow of reaction gas within the chamber and a plurality of injectors configured in flow controllable zones so as to mitigate depletion. | 09-23-2010 |
| 20110008923 | LIGHT EMITTING DIODES WITH SMOOTH SURFACE FOR REFLECTIVE ELECTRODE - A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 at a surface whereon the first electrode is formed. | 01-13-2011 |
| 20110069490 | Phosphor Layer having Enhanced Thermal Conduction and Light Sources Utilizing the Phosphor Layer - A light conversion composition and light sources utilizing that composition are disclosed. The light conversion composition includes a transparent carrier medium, a phosphor conversion medium, and a heat-conducting medium. The transparent carrier medium is transparent to light at first and second wavelengths. The phosphor conversion medium converts light of the first wavelength to light of the second wavelength, the phosphor conversion medium being dispersed in the transparent carrier medium. The heat-conducting medium has a thermal resistance that is less than that of the carrier medium. The heat-conducting medium is dispersed in the transparent carrier medium such that the heat-conducting medium is present in a concentration sufficient to yield a net thermal resistance that is less than 90 percent of the carrier thermal resistance. The heat-conducting medium can include particles of a transparent crystalline material, such as silicon, diamond, or sapphire. | 03-24-2011 |
| 20110092005 | LIGHT-EMITTING-DIODE ARRAY AND METHOD FOR MANUFACTURING THE SAME - A method for forming a light-emitting-diode (LED) array is disclosed which comprises forming a LED structure on a substrate, dividing the LED structure into at least a first and a second LED device with a gap, depositing at least one polymer material over the LED structure substantially filling the gap, removing portions of the at least one polymer material to expose a first electrode of the first LED device and a second electrode of the second LED device, and forming an interconnect on top of the at least one polymer material electrically connecting the first and second electrode. | 04-21-2011 |
| 20110097876 | CHEMICAL VAPOR DEPOSITION REACTOR HAVING MULTIPLE INLETS - A chemical vapor deposition reactor has a wafer carrier which cooperates with a chamber of the reactor to facilitate laminar flow of reaction gas within the chamber and a plurality of injectors configured in flow controllable zones so as to mitigate depletion. | 04-28-2011 |
| 20110108862 | LIGHT-EMITTING-DIODE ARRAY AND METHOD FOR MANUFACTURING THE SAME - A light-emitting-diode (LED) array is disclosed which comprises a first LED device having a first electrode, a second LED device having a second electrode, wherein the first and the second LED device are formed on the same substrate and separated by a gap, at least one polymer material substantially filling the gap, and an interconnect, formed on top of the at least one polymer material, electrically connecting the first and the second electrode. | 05-12-2011 |
