| Patent application number | Description | Published |
| 20100300507 | HIGH EFFICIENCY LOW COST CRYSTALLINE-SI THIN FILM SOLAR MODULE - One embodiment of the present invention provides a double-sided heterojunction solar cell module. The solar cell includes a frontside glass cover, a backside cover situated below the frontside glass cover, and a number of solar cells situated between the frontside glass cover and the backside glass cover. Each solar cell includes a semiconductor multilayer structure situated below the frontside glass cover, including: a frontside electrode grid, a first layer of heavily doped amorphous Si (a-Si) situated below the frontside electrode, a layer of lightly doped crystalline-Si (c-Si) situated below the first layer of heavily doped a-Si, and a layer of heavily doped c-Si situated below the lightly doped c-Si layer. The solar cell also includes a second layer of heavily doped a-Si situated below the multilayer structure; and a backside electrode situated below the second layer of heavily doped a-Si. | 12-02-2010 |
| 20110068367 | DOUBLE-SIDED HETEROJUNCTION SOLAR CELL BASED ON THIN EPITAXIAL SILICON - One embodiment of the present invention provides a double-sided heterojunction solar cell. The solar cell includes a lightly doped epitaxial crystalline Si (c-Si) base layer, a front-side passivation layer situated on the front side of the lightly doped epitaxial c-Si base layer, a back-side passivation layer situated on the back side of the lightly doped epitaxial c-Si base layer, a front-side emitter situated on the surface of the front-side passivation layer, a back surface field (BSF) layer situated on the surface of the back-side passivation layer, a front-side electrode, and a back-side electrode. | 03-24-2011 |
| 20110108100 | ALUMINUM GRID AS BACKSIDE CONDUCTOR ON EPITAXIAL SILICON THIN FILM SOLAR CELLS - One embodiment of the present invention provides a solar cell. The solar cell includes a substrate, a first heavily doped crystalline-Si (c-Si) layer situated above the substrate, a lightly doped c-Si layer situated above the first heavily doped crystalline-Si layer, a second heavily doped c-Si layer situated above the lightly doped c-Si layer, a front side electrode grid situated above the second heavily doped c-Si layer, and a backside electrode grid situated on the backside of the substrate. | 05-12-2011 |
| 20110272012 | SOLAR CELL WITH OXIDE TUNNELING JUNCTIONS - One embodiment of the present invention provides a tunneling junction based solar cell. The solar cell includes a base layer; a quantum-tunneling-barrier (QTB) layer situated adjacent to the base layer; an emitter; a surface field layer; a front-side electrode; and a back-side electrode. | 11-10-2011 |
| 20110277816 | SOLAR CELL WITH SHADE-FREE FRONT ELECTRODE - One embodiment of the present invention provides a solar cell with shade-free front electrode. The solar cell includes a photovoltaic body, a front-side ohmic contact layer situated above the photovoltaic body, a back-side ohmic contact layer situated below the photovoltaic body, a front-side electrode situated above the front-side ohmic contact layer, and a back-side electrode situated below the back-side ohmic contact layer. The front-side electrode includes a plurality of parallel metal grid lines, and the surface of at least one metal grid line is curved, thereby allowing incident light hitting the curved surface to be reflected downward and absorbed by the solar cell surface adjacent to the metal grid line. | 11-17-2011 |
| 20110277825 | SOLAR CELL WITH METAL GRID FABRICATED BY ELECTROPLATING - One embodiment of the present invention provides a solar cell. The solar cell includes a photovoltaic structure, a transparent-conductive-oxide (TCO) layer situated above the photovoltaic structure, and a front-side metal grid situated above the TCO layer. The TCO layer is in contact with the front surface of the photovoltaic structure. The metal grid includes at least one of: Cu and Ni. | 11-17-2011 |
| Patent application number | Description | Published |
| 20100229927 | HETEROJUNCTION SOLAR CELL BASED ON EPITAXIAL CRYSTALLINE-SILICON THIN FILM ON METALLURGICAL SILICON SUBSTRATE DESIGN - One embodiment of the present invention provides a heterojunction solar cell. The solar cell includes a metallurgical-grade Si (MG-Si) substrate, a layer of heavily doped crystalline-Si situated above the MG-Si substrate, a layer of lightly doped crystalline-Si situated above the heavily doped crystalline-Si layer, a backside ohmic-contact layer situated on the backside of the MG-Si substrate, a passivation layer situated above the heavily doped crystalline-Si layer, a layer of heavily doped amorphous Si (a-Si) situated above the passivation layer, a layer of transparent-conducting-oxide (TCO) situated above the heavily doped a-Si layer, and a front ohmic-contact electrode situated above the TCO layer. | 09-16-2010 |
| 20100258168 | SILICON-BASED DIELECTRIC STACK PASSIVATION OF SI-EPITAXIAL THIN-FILM SOLAR CELLS - One embodiment of the present invention provides a solar cell. The solar cell includes a metallurgical-grade Si (MG-Si) substrate, a first layer of heavily doped crystalline-Si situated above the MG-Si substrate, a layer of lightly doped crystalline-Si situated above the first heavily doped crystalline-Si layer, a backside ohmic-contact layer situated on the backside of the MG-Si substrate, a second layer of heavily doped crystalline-Si situated above the lightly doped crystalline-Si layer, a first layer of dielectric situated above the second heavily doped crystalline-Si layer, a second layer of dielectric situated above the first dielectric layer, and front electrodes situated above the second dielectric layer. | 10-14-2010 |
| 20100300506 | LOW-COST HIGH-EFFICIENCY SOLAR MODULE USING EPITAXIAL SI THIN-FILM ABSORBER AND DOUBLE-SIDED HETEROJUNCTION SOLAR CELL WITH INTEGRATED MODULE FABRICATION - One embodiment of the present invention provides a double-sided heterojunction solar cell module. The solar cell includes a frontside glass cover, a backside glass cover situated below the frontside glass cover, and a number of solar cells situated between the frontside glass cover and the backside glass cover. Each solar cell includes a semiconductor multilayer structure situated below the frontside glass cover, including: a frontside electrode grid, a first layer of heavily doped amorphous Si (a-Si) situated below the frontside electrode, a layer of lightly doped crystalline-Si (c-Si) situated below the first layer of heavily doped a-Si, and a layer of heavily doped c-Si situated below the lightly doped c-Si layer. The solar cell also includes a second layer of heavily doped a-Si situated below the multilayer structure; and a backside electrode situated below the second layer of heavily doped a-Si. | 12-02-2010 |
| Patent application number | Description | Published |
| 20110181884 | OPTOFLUIDIC MICROSCOPE DEVICE WITH PHOTOSENSOR ARRAY - Embodiments of the present invention relate to techniques for improving optofluidic microscope (OFM) devices. One technique which may be used eliminates the aperture layer covering the light detector layer. Other techniques retain the aperture layer, reversing the relative position of the light source and light detector such that light passes through the aperture layer before passing through the fluid channel to the light detector. Another technique adds an optical tweezer for controlling the movement of objects moving through the fluid channel. Another technique adds an optical fiber bundle to relay light from light transmissive regions to a remote light detector. Another technique adds two electrodes at ends of the fluid channel to generate an electrical field capable of moving objects through the fluid channel while suppressing rotation. These techniques can be employed separately or in combination to improve the capabilities of OFM devices. | 07-28-2011 |
| 20110211058 | COMPACT AUTOMATED CELL COUNTER - Biological cells in a liquid suspension are counted in an automated cell counter that focuses an image of the suspension on a digital imaging sensor that contains at least 4,000,000 pixels each having an area of 2×2 μm or less and that images a field of view of at least 3 mm | 09-01-2011 |
| 20110222051 | MICROASSEMBLED IMAGING FLOW CYTOMETER - A microassembled imaging cytometer includes a sensing location that undergoes relative motion with a cell. Light from a light source is focused by a focusing element to a plurality of focused illumination spots or lines at the sensing location, illuminating the cell as the cell traverses the sensing location. A collection lens collects light emanating from the cell and refocuses the collected light onto an array light sensor. The focusing element may include an array of microlenses having spherical or aspheric surfaces. The system may include a processing unit that constructs a digital image of the cell based at least in part on signals produced by the array light sensor indicating the intensity and distribution of light falling on the array light sensor. The system may characterize cells using light emanating from the cells by fluorescence. | 09-15-2011 |
| 20110222068 | NEAR REAL TIME OPTICAL PHASE CONJUGATION - An optical system and associated method enable near real time optical phase conjugation. In the method, a translucent medium is illuminated by a sample illumination beam. Light scattered by the medium is directed to an electronic image sensor while a reference beam is also directed to the electronic image sensor. The scattered light and the reference beam form an interference pattern at the electronic image sensor. A digital representation of the interference pattern is recorded using the electronic image sensor, and the characteristics of a conjugate of the sample beam are computed from the numerical representation. A conjugate beam having the computed characteristics is generated using a configurable optical element and directed back to the translucent medium. The generation of the conjugate beam may be accomplished using a spatial light modulator. | 09-15-2011 |