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Hellmer
Michael Hellmer, Carlsbad, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090147901 | Auto Frequency Acquisition Maintenance in a Clock and Data Recovery Device - A system and method are provided for automatic frequency acquisition maintenance in a clock and data recovery (CDR) device. In an automatic frequency acquisition (AFA) mode, the method uses a phase detector (PHD) to acquire the phase of a non-synchronous input communication signal having an initial first frequency. In the event of a loss of lock/loss of signal (LOL/LOS) signal being asserted, a frequency ratio value is retrieved from memory. Using a phase-frequency detector (PFD), the reference signal, and the frequency ratio value, a synthesized signal is generated. In response to using the PFD to generate the synthesized signal and the LOL/LOS signal being deasserted, a rotational frequency detector (RFD) is used to generate a synthesized signal having a frequency equal to the frequency of the input communication signal. With the continued deassertion of the LOL/LOS signal, the PHD is enabled and the phase of the input signal is acquired. | 06-11-2009 |
Michael John Hellmer, Carlsbad, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20100092174 | Differential Inverse Multiplexing Virtual Channels in 40G Ethernet Applications - A system and method are provided for deinterleaving differential inverse multiplexed (DIM) virtual channels in a 40G Ethernet receiver. The method accepts a 10.3125 gigabits per second (Gbps) (10G) Ethernet virtual channel with 64B/86B blocks, including periodic Lane Alignment Marker (LAM) blocks. The 10G virtual channel is deinterleaved into two 5.15625 Gbps (5G) virtual channels by: 1) deinterleaving consecutive blocks from the 10G virtual channel into the 5G virtual channels in an alternating order, and 2) reversing the order of deinterleaving in response to each detected LAM block. Then, the method supplies the 5G virtual channels (i.e. to a MAC module). | 04-15-2010 |
Ronald P. Hellmer, Round Rock, TX US
| Patent application number | Description | Published |
|---|---|---|
| 20080268658 | Photo-assisted hydrogenation process - Apparatus and method are provided for hydrogenating semiconductor or other materials by ultraviolet (UV) radiation in the presence of hydrogen. Hydrogen uptake may be optimized by selection of temperature and wavelength of the UV radiation. Patterned areas may be selectively hydrogenated, such as mesas in Avalanche Photodiode Arrays. | 10-30-2008 |
| 20090309623 | Method for Assessment of Material Defects - A method is provided for measuring defects in semiconductor materials. In one embodiment the method includes placing deuterium in the material and directing an ion beam onto the material to cause a nuclear reaction with the deuterium. Products of the nuclear reaction are analyzed (NRA) to measure the concentration of defects. In other embodiments, a spectroscopic technique is used to detect the deuterium taggant. Lattice defect or total defect occurrences can be selected by selecting the method of placing deuterium in the sample. Defect concentration vs. depth below the surface of material can be determined by varying the energy of the ion beam or by measuring energy profiles of products of the nuclear reaction. The method may be applied to wafers, pixels or other forms of semiconductor materials and may be combined with X-ray analysis of elements on the material. | 12-17-2009 |
Ronald Paul Hellmer, Round Rock, TX US
| Patent application number | Description | Published |
|---|---|---|
| 20100327276 | Method and system for passivation of defects in mercury cadmium telluride based optoelectric devices - Apparatus and method to improve the operating parameters of HgCdTe-based optoelectric devices by the addition of hydrogen to passivate dislocation defects. A chamber and a UV light source are provided. The UV light source is configured to provide UV radiation within the chamber. The optoelectric device, which may comprise a HgCdTe semiconductor, is placed into the chamber and may be held in position by a sample holder. Hydrogen gas is introduced into the chamber. The material is irradiated within the chamber by the UV light source with the device and hydrogen gas present within the chamber to cause absorption of the hydrogen into the material. | 12-30-2010 |
| 20110070143 | Hydrogenation Of Polysilicon Nanowires - An apparatus and method for improving the electrical conductivity of a thermoelectric material, particularly a material comprising polysilicon nanowires. The method comprises hydrogenation of the device to improve the electrical conductivity of the device with negligible change to the thermal conductivity. Hydrogenation of the thermoelectric device may be accomplished using several techniques, including UV-assisted hydrogenation in a vacuum chamber. | 03-24-2011 |