Patent application number | Description | Published |
20080286550 | Polycrystalline Silicon Rod For Zone Reflecting And A Process For The Production Thereof - The invention relates to a polysilicon rod for FZ applications obtainable by deposition of high-purity silicon from a silicon-containing reaction gas, which has been thermally decomposed or reduced by hydrogen, on a filament rod. The polysilicon rod contains, surrounding the filament rod, an inner zone having but few needle crystals, small in size, an outer zone having a relatively small amount of larger needle crystals, and a smooth transition zone between the inner and outer zones. The polysilicon rods are obtained in high yield and can be refined in one pass in an FZ process. | 11-20-2008 |
20110226628 | CONICAL GRAPHITE ELECTRODE WITH RAISED EDGE - The present invention relates to a carbon electrode having a conical or pyramidal tip, wherein the tip is surrounded on its side by a raised edge. | 09-22-2011 |
20110229658 | GRAPHITE ELECTRODE - The present invention relates to an electrode composed of carbon having at least two different zones, wherein an outer zone (A) forms the base of the electrode and carries one or more inner zones, wherein the innermost zone (B) projects from the zone (A) at the top and has a lower specific thermal conductivity than zone (A). | 09-22-2011 |
20110229717 | METHOD FOR PRODUCING CRACK-FREE POLYCRYSTALLINE SILICON RODS - The invention relates to a method for producing polycrystalline silicon rods by deposition from the gas phase on a thin rod, wherein one or a plurality of disks consisting of a material having a lower electrical resistivity than the polycrystalline silicon under deposition conditions are introduced above the electrodes and/or below the bridge of the rod pair. | 09-22-2011 |
20120100302 | METHOD FOR PRODUCING POLYCRYSTALLINE SILICON RODS - The invention relates to a method for producing polycrystalline silicon rods by deposition of silicon on at least one thin rod in a reactor, wherein, before the silicon deposition, hydrogen halide at a temperature of 400-1000° C. is introduced into the reactor containing at least one thin rod and is irradiated by means of UV light, as a result of which halogen and hydrogen radicals arise and the volatile halides that form are removed from the reactor. | 04-26-2012 |
20130011581 | PROTECTIVE DEVICE FOR ELECTRODE HOLDERS IN CVD REACTORS - A device for protecting electrode holders in CVD reactors includes an electrode suitable for accommodating a filament rod on an electrode holder which includes an electrically conductive material and is installed in a recess of a bottom plate, wherein an intermediate space between an electrode holder and a bottom plate is sealed by means of a sealing material, and the sealing material is protected by a protective body which is made up of one or more parts and is arranged in a ring-like manner around the electrodes, and the height of the protective body increases at least in sections in the direction of the electrode holder. | 01-10-2013 |
20130295408 | POLYCRYSTALLINE SILICON ROD AND PROCESS FOR PRODUCTION THEREOF - The invention provides a polycrystalline silicon rod having a total diameter of at least 150 mm, including a core A having a porosity of 0 to less than 0.01 around a thin rod, and at least two subsequent regions B and C which differ in porosity by a factor of 1.7 to 23, the outer region C being less porous than region B. | 11-07-2013 |
20150361568 | CONICAL GRAPHITE ELECTRODE WITH RAISED EDGE - A carbon electrode has a conical or pyramidal tip, wherein the tip is surrounded on its side by a raised edge. | 12-17-2015 |