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Heiji
Heiji Enomoto, Sendai-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090088589 | PROCESS FOR PRODUCTION OF LACTIC ACID AND EQUIPMENT FOR THE PRODUCTION - A process for producing lactic acid according to the invention is characterized in that glycerin is subjected to a hydrothermal reaction under an alkaline condition at a temperature in the range of 150 to 400° C. and under pressure equal to or more than the saturated vapor pressure at the temperature. The glycerin produced from plant fats, animal fats or the like or pure product synthesized chemically or a discharge containing glycerin generated at the production of diesel fuel oil from fats, in which the fats are subjected to a transesterification with alcohol in the presence of an alkali catalyst in order to obtain fatty acid ester is preferably used as a starting material. | 04-02-2009 |
| 20100047140 | APPARATUS FOR PRODUCING LACTIC ACID - An apparatus for producing lactic acid according to the invention comprises a reactor carrying out: subjecting glycerin to a hydrothermal reaction under an alkaline condition, supplying an alkaline solution comprising glycerin; and continuously producing lactic acid, wherein glycerin is subjected to a hydrothermal reaction under an alkaline condition at a temperature in the range of 150 to 400° C. and under pressure equal to or more than the saturated vapor pressure at the temperature. The glycerin produced from plant fats, animal fats or the like or pure product synthesized chemically or a discharge containing glycerin generated at the production of diesel fuel oil from fats, in which the fats are subjected to a transesterification with alcohol in the presence of an alkali catalyst in order to obtain fatty acid ester is preferably used as a starting material. | 02-25-2010 |
Heiji Kobayashi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20100190306 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE CAPABLE OF SUPPRESSING IMPURITY CONCENTRATION REDUCTION IN DOPED CHANNEL REGION ARISING FROM FORMATION OF GATE INSULATING FILM - A method of manufacturing a semiconductor device is provided that can suppress impurity concentration reduction in a doped channel region arising from formation of a gate insulating film. With a silicon oxide film and a silicon nitride film being formed, p-type impurity ions are implanted in a Y direction from diagonally above. As for an implant angle α of the ion implantation, an implant angle is adopted that satisfies the relationship tan | 07-29-2010 |
Heiji Kobayashi, Hsinchu City TW
| Patent application number | Description | Published |
|---|---|---|
| 20120015494 | METHOD FOR FABRICATING BOTTOM ELECTRODE OF CAPACITORS OF DRAM - A method for manufacturing a capacitor bottom electrode of a dynamic random access memory is provided. The method comprises providing a substrate having a memory cell region and forming a polysilicon template layer on the memory cell region of the substrate. A supporting layer is formed on the polysilicon template layer and plural openings penetrating through the supporting layer and the polysilicon template layer are formed and a liner layer is formed on at least a portion of the polysilicon template layer exposed by the openings A conductive layer substantially conformal to the substrate is formed on the substrate. A portion of the conductive layer on the supporting layer is removed so as to form plural capacitor bottom electrodes. Using the polysilicon template layer, the openings with relatively better profiles are formed and the dimension of the device can be decreased. | 01-19-2012 |
Heiji Watanabe, Suita-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20080305597 | SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF - The object of the present invention is to provide a method of manufacturing high permittivity gate dielectrics for a device such as an MOSFET. A HfSiO film | 12-11-2008 |
| 20090170300 | SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF - The object of the present invention is to provide a method of manufacturing high permittivity gate dielectrics for a device such as an MOSFET. A HfSiO film | 07-02-2009 |