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Hehemann
Ingo Hehemann, Hagen A.t.w. DE
| Patent application number | Description | Published |
|---|---|---|
| 20090153198 | LOW-LEAKAGE SWITCH FOR SAMPLE AND HOLD - An integrated electronic device includes a sample and hold stage. The sample and hold stage has a sampling capacitor (C) for an input voltage at an input node (Vin), a first switch (S | 06-18-2009 |
| 20090206811 | CURRENT LIMITED VOLTAGE SOURCE WITH WIDE INPUT CURRENT RANGE - An integrated electronic device includes circuitry for providing a regulated output supply voltage level at an output node from an adjustable current. The circuitry includes an adjustable current source for providing the adjustable current and for adjusting the adjustable current to a magnitude of a target value in response to a configuration signal, an auxiliary adjustable current source providing an auxiliary adjustable current having a magnitude corresponding to the target value, and an output supply voltage level regulating loop coupled to the output node and adapted to keep the output supply voltage level at a preset value. A current selecting stage is adapted to receive the adjustable current and the auxiliary current. The current selecting stage is further adapted to supply a selected current corresponding to a lesser value of the adjustable current and the auxiliary adjustable current. Further, a current limiting stage is coupled to the output node for limiting the selected current to a predefined magnitude. | 08-20-2009 |
| 20090267682 | HIGH PRECISION POWER-ON-RESET CIRCUIT WITH AN ADJUSTABLE TRIGGER LEVEL - An electronic device comprising circuitry for providing a Power-on-Reset (POR) signal as a function of a supply voltage level of the circuitry. The circuitry comprises a Vbe-cell or a Vgs-cell comprising a first current path including a first transistor and a second current path including a second transistor. Each transistor has a control terminal for controlling a first current in the first current path and a second current in the second current path, wherein a control voltage level is commonly applied to the control terminals of the first and the second transistor. The control voltage level is derived from the current supply voltage level of the circuitry, and the circuitry further comprises a POR output node for providing a POR output signal, which changes from a first state to a second state in response to the ratio of the magnitudes of the first current and the second current. | 10-29-2009 |
Ingo Hehemann, Hagen A. T.w. DE
| Patent application number | Description | Published |
|---|---|---|
| 20090189647 | BIAS CURRENT GENERATOR FOR MULTIPLIE SUPPLY VOLTAGE CIRCUIT - An electronic device supplied by multiple supply voltages includes a bias current generating stage and maximum current selection stage. The bias current generating stage comprises a crude bias current generator for generating an crude bias current during a power up phase in which at least one of the multiple supply voltages has not yet reached its target supply voltage level, a reference current stage for providing a reference current having a target current value greater than the target value of the crude bias current when the multiple supply voltages have reached their target supply voltage levels. The maximum current selection stage is adapted to continuously output a bias current which is the maximum current of the crude bias current and the reference current. | 07-30-2009 |
Ingo Hehemann, Hagen DE
| Patent application number | Description | Published |
|---|---|---|
| 20110168892 | Pixel Implemented Current Amplifier - The present invention provides a radiation sensor featuring a plurality of individual sensor elements, e.g. pixels, each of which having a radiation detection portion that is adapted to generate an electric current in response to impingement of electromagnetic radiation and a current amplifier for amplifying the photoelectric current generated by the radiation detection portion. Current amplification is therefore performed locally within each pixel of the radiation sensor itself. This local current amplification effectively allows to increase sensitivity and response of the radiation sensor and therefore enables implementation of the radiation sensor on the basis of CMOS technology. By means of the current amplification, the radiation sensor can be adapted for read-out by means of read-out devices and signal processing modules featuring distinct input specifications Further, a bias current required by the pixel implemented current amplifier is reproduced within each pixel and coupled to consecutive or adjacently arranged sensor elements or pixel, thereby providing a cascaded bias current regeneration and bias current distribution scheme. | 07-14-2011 |