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Hefty
Mark Sean Hefty, Aloha, OR US
| Patent application number | Description | Published |
|---|---|---|
| 20090296699 | PROGRAMMABLE NETWORK INTERFACE CARD - A computing system comprises a programmable network interface card and a host comprising a memory and a transport handler. The programmable network interface card may process a frame received over a network, and determine whether packet data included in the frame is to be directly placed in a first region in a memory. The programmable network interface may comprise a network direct memory access engine (NDE), which may cause transfer of the packet data directly to the first region in the memory if the packet data is to be directly placed into the first region in the memory. The programmable network interface card may cause transfer of the packet data to the transport handler in response to determining that the packet data is not to be directly placed in the first region in the memory. | 12-03-2009 |
| 20100146069 | METHOD AND SYSTEM FOR COMMUNICATING BETWEEN MEMORY REGIONS - A method and system are provided for transferring data in a networked system between a local memory in a local system and a remote memory in a remote system. A RDMA request is received and a first buffer region is associated with a first transfer operation. The system determines whether a size of the first buffer region exceeds a maximum transfer size of the networked system. Portions of the second buffer region may be associated with the first transfer operation based on the determination of the size of the first buffer region. The system subsequently performs the first transfer operation. | 06-10-2010 |
Robert Hefty, Femont, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20080244400 | RECIPE REPORT CARD FRAMEWORK AND METHODS THEREOF - A computer-implemented method for performing recipe evaluation is provided. The computer-implemented method includes integrating a plurality of data sources into a single recipe report card framework. The recipe report card framework includes an editor for interacting with the plurality of data sources. The computer-implemented method also includes displaying a plurality of graphical displays. Each graphical display of the plurality of graphical displays is configured to present a signal parameter of a set of signal parameters for at least a substrate. The computer-implemented method further includes providing a plurality of criteria for each of the set of signal parameters. The computer-implemented method yet also includes providing a plurality of ranges for the each of the set of signal parameters. The computer-implemented method yet further includes providing an expert guide, which is configured to provide guidance in analyzing a recipe. | 10-02-2008 |
Robert C. Hefty, Laguna Niguel, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20100261352 | METHOD FOR LOW-K DIELECTRIC ETCH WITH REDUCED DAMAGE - A method for etching features in a low-k dielectric layer disposed below an organic mask is provided by an embodiment of the invention. Features are etched into the low-k dielectric layer through the organic mask. A fluorocarbon layer is deposited on the low-k dielectric layer. The fluorocarbon layer is cured. The organic mask is stripped. | 10-14-2010 |
Robert C. Hefty, Fremont, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20100108264 | BI-LAYER, TRI-LAYER MASK CD CONTROL - A method for controlling critical dimension (CD) of etch features in an etch layer disposed below a functionalized organic mask layer disposed below an intermediate mask layer, disposed below a patterned photoresist mask, which forms a stack is provided. The intermediate mask layer is opened by selectively etching the intermediate mask layer with respect to the patterned photoresist mask. The functionalized organic mask layer is opened. The functionalized organic mask layer opening comprises flowing an open gas comprising COS, forming a plasma, and stopping the flowing of the open gas. The etch layer is etched. | 05-06-2010 |
| 20100248485 | METHOD FOR DIELECTRIC MATERIAL REMOVAL BETWEEN CONDUCTIVE LINES - A method of removing carbon doped silicon oxide between metal contacts is provided. A layer of the carbon doped silicon oxide is converted to a layer of silicon oxide by removing the carbon dopant. The converted layer of silicon oxide is selectively wet etched with respect to the carbon doped silicon oxide and the metal contacts, which forms recess between the metal contacts. | 09-30-2010 |