Hee Youl
Hee Youl Kwak, Daejeon-City KR
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20090205635 | Evacuated Tubular Solar Collector with Eccentric Type Manifold Flange - There is provided an evacuated tubular solar collector with an eccentric type manifold flange capable of changing flow of a heating medium and improving the electric heat performance of a manifold by employing an eccentric end cap with a fluid path and a baffle in the manifold and improving the structure of the manifold. The evacuated tubular solar collector may comprise an evacuated tubular solar collector; a manifold being installed at an upper position of the evacuated tubular solar collector and including a number of heat dissipation holes; eccentric end caps attached to both sides of the manifold, the eccentric end cap including a fluid path; and a baffle attached to an exit of the fluid path through which a fluid flows into. The fluid path and the baffle may be positioned at a tilt angle, thereby to improve uniform transfer of heat in the evacuated tubular solar collector. | 08-20-2009 |
20110000778 | EVAPORATIVE DESALINATION APPARATUS OF SEA WATER, USING PHASE CHANGE MEDIUM - There is provided an evaporative desalination apparatus of sea water using a phase change medium, and more particularly, a desalination method by evaporation, for producing fresh water from sea water by using various high heat sources, such as solar heat, engine heat and the like. Instead of a conventional method in which warm water is supplied to an evaporator of an desalination apparatus to evaporate seawater, the present invention provides the phase change medium capable of supplying a much more amount of heat to the evaporator, thereby enhancing the efficiency of the desalination apparatus to produce a great quantity of fresh water or manufacturing a compact desalination apparatus. | 01-06-2011 |
Hee Youl Lee, Gyeonggi-Do KR
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20100246268 | METHOD OF PROGRAMMING NONVOLATILE MEMORY DEVICE - In a method of programming a nonvolatile memory device, when a program is performed, a program voltage is applied to a first word line selected for the program. A first pass voltage is applied to three second word lines neighboring the first word line toward a source select line. First and second voltages are applied to third and fourth word lines neighboring the first word line toward the source select line. A second pass voltage is applied to the remaining word lines other than the first to fourth word lines. | 09-30-2010 |
20100329021 | METHOD OF PROGRAMMING NONVOLATILE MEMORY DEVICE - A method of programming a nonvolatile memory device includes inputting program data to page buffers; performing a program operation and a program verification operation until threshold voltages of memory cells included in a selected page reach a target level according to the program data; when the threshold voltages of the memory cells reach the target level, performing an over-program verification operation to determine over-programmed memory cells in the memory cells; and making a determination of whether error checking and correction (ECC) processing for the over-programmed memory cells is feasible. | 12-30-2010 |
20110261623 | METHOD OF ERASING SEMICONDUCTOR MEMORY DEVICE - A method of erasing a semiconductor memory device comprises grouping a plurality of word lines of each memory block into at least two groups based on intensity of disturbance between neighboring word lines; performing an erase operation by applying a ground voltage to all word lines of a selected memory block and by applying an erase voltage to a well of the selected memory block; and first increasing the ground voltage of one group of the groups to a positive voltage during the erase operation. | 10-27-2011 |
20120294091 | METHOD FOR OPERATING NON-VOLATILE MEMORY DEVICE - A method for operating a non-volatile memory device which includes a plurality of memory cells serially coupled between a source selection transistor and a drain selection transistor, a first dummy memory cell coupled between the source selection transistor and the memory cells, and a second dummy memory cell coupled between the drain selection transistor and the memory cells includes applying a verification voltage to a gate of a selected memory cell, applying a first voltage to gates of unselected memory cells, and applying a second voltage that is lower than the first voltage to a gate of at least one of the first dummy memory cell and the second dummy memory cell, during a program verification operation. | 11-22-2012 |
20130235671 | SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF - A semiconductor memory device and a method of operating a semiconductor memory device includes connecting selected even bit lines to selected even cell strings, programming memory cells in the selected even cell strings by using a second program permission voltage higher than a first program permission voltage, connecting selected odd bit lines to selected odd cell strings when programming of the memory cells is finished, and programming memory cells in the selected odd cell strings by using the first program permission voltage. | 09-12-2013 |
Hee Youl Lee, Kyeongki-Do KR
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20080247234 | FLASH MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A flash memory device includes a plurality of memory cell blocks, an operating voltage generator, a block switching unit and a voltage supply circuit. Each of the plurality of memory cell blocks includes select lines and word lines, and has pass word lines included between the select lines and the word lines. The operating voltage generator outputs operating voltages to global select lines, global word lines and global pass word lines. The block switching unit connects the global word lines to the word lines and the select lines in response to a block select signal. The voltage supply circuit is connected to the select line and the pass word line, and is configured to supply the select line and the pass word line with a ground voltage in response to a block select inverse signal. | 10-09-2008 |
Hee Youl Lee, Icheon-Si Gyeonggi-Do KR
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20120170376 | SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF - A semiconductor memory device includes a plurality of memory cells, including an N well formed within a P type region and a P well formed within the N well, a peripheral circuit configured to perform a program, program verify, read, erase, or erase verify operation on memory cells selected from among the memory cells, a voltage supply circuit configured to generate a positive voltage and a negative voltage for the program, program verify, read, erase, or erase verify operation, and a control circuit configured to control the peripheral circuit and the voltage supply circuit so that the program, program verify, read, erase, or erase verify operation is performed and, when the program verify and read operations are performed, different voltage is supplied to the P well and the N well. | 07-05-2012 |
Hee-Youl Choi, Hwaseong-Si KR
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20140279814 | CONTEXT-AWARE METHOD AND APPARATUS - A context-aware apparatus and a context-aware method are provided. The context-aware apparatus includes a context-model creating unit configured to create a context model based on input data; and a context reasoning unit configured to update a previously stored context model in a memory storage based on the created context model, and to infer a context using the updated context model and input data. | 09-18-2014 |
Hee-Youl Kim, Yongin-Si KR
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20090013177 | LICENSE MANAGEMENT SYSTEM AND METHOD - A license-management system and method is provided. A method of issuing a proxy certificate includes transmitting a proxy-certificate-issuance-request message to a license server in order for the local license manager to acquire an authority to issue a license by a local license manager; enabling the license server to verify the proxy-certificate-issuance-request message; if the proxy-certificate-issuance-request message is valid, transmitting a proxy certificate to the local license manager by the license server, the proxy certificate including information regarding the authority to issue a license; and verifying the proxy certificate by the local license manager. | 01-08-2009 |
Hee-Youl Lim, Gyeonggi-Do KR
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20120220129 | METHOD FOR FORMING MASK FOR FORMING CONTACT HOLES OF SEMICONDUCTOR DEVICE - A method for forming a mask for forming contact holes of a semiconductor device includes coating an etch target layer with a first photoresist layer, patterning the first photoresist layer in a type of lines and spaces to form a first photoresist pattern, wherein the first photoresist pattern comprises pads formed at both ends of the first photoresist pattern, and lines repeatedly formed between the pads at the both ends, forming a protective layer on a surface of the first photoresist pattern by performing a freezing process onto the first photoresist pattern, and forming a second photoresist pattern having a type of lines stretched in a second direction which is perpendicular to the first direction on the etch target layer including the protective layer. | 08-30-2012 |