Patent application number | Description | Published |
20100287447 | MEMORY SYSTEM IDENTIFYING AND CORRECTING ERASURE USING REPEATED APPLICATION OF READ OPERATION - Provided is a read method for a memory system. The read method determines whether a read data error is correctable. The read method applies a plurality of read operations at a set read voltage level to identify erasure candidates, when the error is uncorrectable. The read method performs erasure decoding using an error correction code or an error detection code for the erasure candidates. | 11-11-2010 |
20110007563 | NONVOLATILE MEMORY DEVICE, SYSTEM, AND RELATED METHODS OF OPERATION - A method of reading a nonvolatile memory device comprises measuring threshold voltage distributions of a plurality of memory cells, combining the measured threshold voltage distributions, and determining local minimum points in the combined threshold voltage distributions to determine read voltages for a predetermined group of memory cells. | 01-13-2011 |
20110038207 | FLASH MEMORY DEVICE, PROGRAMMING AND READING METHODS PERFORMED IN THE SAME - The flash memory device includes a control logic circuit and a bit level conversion logic circuit. The control logic circuit programs first through N | 02-17-2011 |
20110125975 | INTERLEAVING APPARATUSES AND MEMORY CONTROLLERS HAVING THE SAME - An interleaving apparatus may include a first buffer unit configured to buffer input data in units having a size of a sector to generate sector unit data, an encoding unit configured to encode the sector unit data and generate a plurality of parity codes based on the encoding, a second buffer unit configured to interleave the sector unit data and the parity codes and generate interleaving data based on the interleaving, the second buffer unit including a plurality of output buffers configured to store the interleaving data, and an output unit configured to output the interleaving data. | 05-26-2011 |
20110216589 | FLASH MEMORY DEVICE, MEMORY SYSTEM AND METHOD OF OPERATING THE SAME - A memory system includes a memory device and a data converting device. The memory device includes a memory cell array which includes a plurality of memory cells. The data converting device includes an encoding device. The encoding device converts input data into converted data by changing a bandwidth corresponding to the input data, and provides the converted data to the memory device. Accordingly, the memory system is capable of improving the reliability of programmed data by changing the bandwidth corresponding to data to be programmed. A method of storing data in a memory system is also disclosed. | 09-08-2011 |
20110216590 | NONVOLATILE MEMORY DEVICE USING INTERLEAVING TECHNOLOGY AND PROGRAMMMING METHOD THEREOF - A nonvolatile memory device using interleaving technology is provided. The nonvolatile memory device includes a first controller configured to allocate one of 2 | 09-08-2011 |
20110289278 | METHOD OF ESTIMATING READ LEVEL FOR A MEMORY DEVICE, MEMORY CONTROLLER THEREFOR, AND RECORDING MEDIUM - A method of estimating a read level for a memory device includes calculating first information corresponding to at least one among information about the number of cells having a particular logic level in data to be programmed and information about the number of cells having a particular cell state and storing the first information during a program operation; reading the data based on a threshold level that has been set and calculating second information about the number of cells in at least one state defined by the threshold level with respect to the read data; calculating third information about the number of cells in the at least one state, which corresponds to the second information, using a probability based on the first information; comparing the second information with the third information; and determining whether to change the threshold level according to the comparison result. | 11-24-2011 |
20120033502 | METHOD OF READING DATA IN NON-VOLATILE MEMORY DEVICE, AND DEVICE THEREOF - A method of reading data in a non-volatile memory device. The method includes reading a plurality of memory cells of a first page in a memory cell array using a first read level, reading a plurality of memory cells of a second page adjacent to the memory cells of the first page using a second read level, determining whether a state of each memory cell of the first page has been changed based on the first read level to verify a threshold voltage of each memory cell of the second page based on the second read level, and revising the state of each memory cell of the second page according to a result of the determination. | 02-09-2012 |
20130070526 | FLASH MEMORY AND READING METHOD OF FLASH MEMORY - A reading method of a flash memory, the reading method including: sensing hard data of a first target page by using a first hard read voltage; and generating soft data of the first target page by using at least one pair of, that is, two, first soft read voltages whose voltage levels are different from a voltage level of the first hard read voltage, while the flash memory performs a first operation on the hard data. | 03-21-2013 |
20130124944 | MEMORY CONTROLLER FOR NONVOLATILE MEMORY DEVICE, MEMORY SYSTEM COMPRISING MEMORY CONTROLLER, AND RELATED METHODS OF OPERATION - A nonvolatile memory device comprises a memory controller having a memory cell status estimator that generates status estimation information indicating the status of a memory cell based on status register data, a coupling group index selector configured to generate a select signal for selecting a page and coupling group index from the status estimation information, and a memory cell status value generator configured to map the status estimation information to the data reliability decision bits and the coupling group index and generate a status value of the memory cell for error correction code decoding. | 05-16-2013 |