| Patent application number | Description | Published |
|---|
| 20080246029 | Thin film transistor, organic light emitting display device including the same, and method of manufacturing the organic light emitting display device - A thin film transistor, e.g., for use in an organic light emitting display, may include: a gate insulating layer disposed on a gate electrode located on a substrate; a semiconductor layer, disposed on the gate insulating layer; and a planarization layer disposed on the gate insulating layer, the source and drain electrodes, and the channel area, and having openings exposing parts of the first source and drain areas and the source and drain electrodes, respectively. The semiconductor layer may include: a channel area corresponding to the gate electrode; first source and drain areas doped with an impurity outside the channel area; second source and drain areas, including a metal, outside the first source and drain areas; and source and drain electrodes disposed on the second source and drain areas and exposing the first source and drain areas. A pixel electrode may be disposed in one of the openings. | 10-09-2008 |
| 20080246037 | Flat display device and method of manufacturing the same - Provided is a flat display device, and more particularly, an active matrix (AM) flat display device having a thin film transistor (TFT). The flat display device includes a substrate, a plurality of TFTs (thin film transistors) provided on the substrate, each TFT comprising an active layer, a source electrode and a drain electrode that contact the active layer, and an ohmic contact layer interposed between the active layer and the source and drain electrodes, and a light emitting device electrically connected to the TFT, wherein the ohmic contact layer and a layer including the source and drain electrodes are formed to have the same pattern. | 10-09-2008 |
| 20080277666 | Thin film transistor, organic light emitting display device including the same, and method of manufacturing the organic light emitting display device - A thin film transistor (TFT) may include a substrate, a gate electrode on the substrate, a gate insulating layer on the gate electrode, and a semiconductor layer on the gate insulating layer. The semiconductor layer may include a top surface, a channel area aligned in a vertical direction with the gate electrode, a plurality of doped areas proximate to the channel area, and a plurality of non-doped areas. Source and drain electrodes may be on the top surface of the semiconductor layer aligned above respective ones of the plurality of non-doped areas of the semiconductor layer. A planarization layer may be on the gate insulating layer, the source and drain electrodes and the semiconductor layer channel area, and may include a plurality of openings respectively exposing the plurality of doped areas of the semiconductor layer and a portion of the source electrode and the drain electrode. | 11-13-2008 |
| 20080284326 | Organic light emitting diode display device and method of fabricating the same - Provided is an organic light emitting diode (OLED) display device, including: a substrate; a semiconductor layer on the substrate; a gate insulating layer on the substrate with the semiconductor layer; a gate electrode on a region of the gate insulating layer corresponding to the semiconductor layer and insulated from the semiconductor layer; source and drain electrodes connected to the semiconductor layer; metal layers on the source and drain electrodes, spaced a distance apart from each other, and including nickel; a passivation layer over the gate insulating layer; a first electrode on the passivation layer, and electrically connected to the metal layers; an organic layer on the first electrode; and a second electrode on the organic layer. | 11-20-2008 |
| 20100026170 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode display includes a substrate, a thin film transistor, a planarization layer, a pixel electrode, and a pixel defining layer. The thin film transistor is formed on the substrate and includes a gate electrode, a source electrode, and a drain electrode. The planarization layer is formed on the thin film transistor and has a contact hole that exposes a predetermined part of the drain electrode. The pixel electrode is formed on the planarization layer and is connected to a drain electrode of the thin film transistor through the contact hole. The pixel defining layer is formed on the planarization layer and has an opening that exposes the pixel electrode. The pixel defining layer and the planarization layer have different colors. | 02-04-2010 |
| 20100044692 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME - The present invention relates to an organic light emitting diode (OLED) display and a manufacturing method thereof. The OLED display includes a substrate member that includes a plurality of pixel areas. A thin film transistor (TFT) is formed on the substrate member and includes a gate electrode, a source electrode, and a drain electrode. A planarization layer is formed on the TFT and includes a contact hole through which the drain electrode is partially exposed. A pixel electrode is formed on the planarization layer and is connected to the drain electrode of the TFT through the contact hole. A pixel defining layer is formed on the planarization layer and has a through opening. Light scattering spacers are formed on the pixel defining layer to scatter reflected light and may have various shapes and dimensions. | 02-25-2010 |
| 20100052528 | Organic light emitting diode display, display device including the same, and associated methods - An organic light emitting diode (OLED) display, a display device including the same, and associated methods, the OLED display including a substrate member, an organic light emitting element on the substrate member, and a liquid crystal polymer layer on the organic light emitting element, wherein the liquid crystal polymer layer is configured to delay a phase of light passing therethrough. | 03-04-2010 |
| 20100171105 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode display includes a substrate, a thin film transistor on the substrate and including a gate electrode, a source electrode, and a drain electrode, a planarization layer on the thin film transistor and having a contact hole exposing a portion of one of the drain electrode or the source electrode, a pixel electrode on the planarization layer and coupled to the one of the drain electrode or the source electrode through the contact hole, a colored pixel defining layer on the planarization layer and including an opening exposing at least a portion of the pixel electrode, and a colored layer on the pixel electrode and the pixel defining layer and having a chromatic color different from a chromatic color of the pixel defining layer. | 07-08-2010 |
| 20100176382 | Organic light emitting diode display - An organic light emitting diode display device constructed with an organic light emitting element including a first electrode, an organic emission layer, and a second electrode sequentially laminated together, a transmittance control layer formed on the organic light emitting element, a selective reflective layer formed on the transmittance control layer, a polarizing plate formed on the selective reflective layer, and a phase retardation plate disposed between the organic light emitting element and the polarizing plate. | 07-15-2010 |
| 20110049502 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device includes a substrate; a gate electrode disposed on the substrate, the gate electrode including a first portion of a metal oxide layer and a metal layer; a pixel electrode disposed on the substrate so as to be insulated from the gate electrode, the pixel electrode including a second portion of the metal oxide layer; a gate insulating layer disposed on the substrate to cover the gate electrode; a semiconductor layer disposed on the gate insulating layer, the semiconductor layer including a channel region corresponding to the gate electrode, and first and second regions disposed outside the channel region; a first electrode connected to the first region of the semiconductor layer; a second electrode connected to the second region of the semiconductor layer and the pixel electrode; an ohmic contact layer disposed between the first region of the semiconductor layer and the first electrode and between the second region of the semiconductor layer and the second electrode; a pixel defining layer disposed on the substrate to cover the first electrode, the second electrode, the semiconductor layer, and the pixel electrode, the pixel defining layer including an opening through which the pixel electrode is partially exposed; an organic light-emitting layer disposed on the pixel electrode exposed through the opening; and an opposite electrode covering the organic light-emitting layer. | 03-03-2011 |
