Hayamizu, JP
Akira Hayamizu, Hyogo JP
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20150180083 | CYLINDRICAL BATTERY - A cylindrical battery comprises a spiral electrode assembly having a positive electrode plate being provided with a porous nickel sintered substrate using a nickel coated steel plate as a conductive core substrate, and containing a positive electrode active material mainly including a nickel hydroxide, a negative electrode plate, and a separator, and the positive electrode plate and the negative electrode plate are wound into a spiral form interposing the separator therebetween, and the positive electrode plate has a positive core substrate tab portion in which the conductive core substrate is exposed without the porous nickel sintered substrate at one end portion in the height direction, and in in a finally wound end portion of the spiral electrode assembly, a corner tip portion of the positive core substrate tab portion is bent in a direction toward an axis of the spiral electrode assembly. | 06-25-2015 |
Atsushi Hayamizu, Shizuoka JP
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20100207017 | CHARGED PARTICLE BEAM WRITING METHOD AND CHARGED PARTICLE BEAM WRITING APPARATUS - The height of selected points on the surface of a mask is measured, and if the number of measurement errors in this measurement is less than a predetermined value, an approximated curved surface for the mask surface is generated. The measurement data and height data obtained from the approximated curved surface are then compared, and if there is no point at which the difference between the measurement data and the data obtained from the approximated curved surface is greater than a predetermined threshold value, then it is determined that the reliability of the approximated curved surface is high and the height of the mask surface is corrected in accordance with this approximated curved surface. | 08-19-2010 |
Hidetaka Hayamizu, Himeji-Shi JP
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20080268377 | PROCESS FOR PRODUCING PHOTORESIST POLYMERIC COMPOUNDS - Process for producing photoresist polymeric compound having repeated units corresponding to at least one monomer selected from monomer (a) having lactone skeleton, monomer (b) having group which becomes soluble in alkali by elimination with acid, and monomer (c) having alicyclic skeleton having hydroxyl group. Process includes (A) polymerizing mixture of monomers containing at least one monomer selected from the above monomers (a), (b), and (c), and (B) extracting polymer formed in the polymerization by using organic solvent and water to partition the formed polymer into organic solvent layer and metal component impurity into aqueous layer, or passing polymer solution, which contains polymer having repeated units corresponding to at least one of the above monomers (a), (b), and (c) and metal content of which is 1000 ppb by weight or less relative to the polymer through filter comprising porous polyolefin membrane having cation-exchange group. The photoresist polymeric compounds have a metallic impurity content that is extremely low. | 10-30-2008 |
20100099836 | PROCESS FOR PRODUCING PHOTORESIST POLYMERIC COMPOUNDS - Process for producing photoresist polymeric compound having repeated units corresponding to at least one monomer selected from monomer (a) having lactone skeleton, monomer (b) having group which becomes soluble in alkali by elimination with acid, and monomer (c) having alicyclic skeleton having hydroxyl group. Process includes (A) polymerizing mixture of monomers containing at least one monomer selected from the above monomers (a), (b), and (c), and (B) extracting polymer formed in the polymerization by using organic solvent and water to partition the formed polymer into organic solvent layer and metal component impurity into aqueous layer, or passing polymer solution, which contains polymer having repeated units corresponding to at least one of the above monomers (a), (b), and (c) and metal content of which is 1000 ppb by weight or less relative to the polymer through filter comprising porous polyolefin membrane having cation-exchange group. The photoresist polymeric compounds have a metallic impurity content that is extremely low. | 04-22-2010 |
Hirotaka Hayamizu, Niigata JP
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20120244539 | METHOD FOR SCREENING OF THERAPEUTIC AGENT FOR HYPERLIPEMIA - Disclosed are a highly safe treatment method for hyperlipidemia and a therapeutic agent for hyperlipidemia. Specifically, the invention provides a novel method for screening an agent for treating hyperlipidemia, more specifically, a method for screening a substance that can inhibit the production or function of gangliosides, particularly GM3, or inhibit the activity or expression of GM3 synthase to reduce a blood lipid level. A pharmaceutical composition, which can specifically inhibit the production of gangliosides, particularly GM3, thereby effective for hyperlipidemia treatment, and others are also provided. | 09-27-2012 |
Hitoshi Hayamizu, Osaka JP
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20110026947 | FIXING DEVICE, CONTROL METHOD FOR A FIXING DEVICE AND IMAGE FORMING APPARATUS - Provided is a fixing device including: a heater; a heating body that is heated by the heater and is caused to rotate; a pressure body that is in contact with the heating body, and is caused to rotate; a plurality of temperature sensor units each including a temperature sensing element that is covered with a protective member and is in contact with the heating body in order to sense a temperature of the heating body; and a control unit that recognizes temperatures of the heating body at respective portions thereof based on signals received from the temperature sensor units, brings the heater into an ON state if the recognized temperatures exhibit a temperature difference of a predetermined value or larger, judges that the protective member has peeled off if all the temperatures sensed by using the temperature sensor units are recognized to have risen, and corrects the temperature. | 02-03-2011 |
20130070274 | DATA PROCESSING APPARATUS, DATA FILE, AND METHOD FOR CONTROLLING THE DATA PROCESSING APPARATUS - Provided is a data processing apparatus which can improve user's convenience. The data processing apparatus includes a storage portion which stores set value information in which a set value for processing a data file and a set value symbol are associated with each other, and a processing portion which verifies a set value symbol included in a file name of a data file to be processed by an instruction with the set value information, sets a current set value to a set value corresponding to the set value symbol, and performs processing of the data file to be processed by the instruction based on the set value after setting. | 03-21-2013 |
20140153005 | SHEET CARRYING APPARATUS AND IMAGE FORMING APPARATUS HAVING THE SAME - A sheet carrying apparatus comprises a job executing portion that includes a sheet carrying portion for carrying a sheet, a power supply portion that performs usual power supply to the job executing portion in a usual mode and stops the power supply to the job executing portion in a power saving mode that restricts the power supply more than the usual mode; an ejecting portion into which the sheet carried by the sheet carrying portion is ejected, and an ejected sheet detecting portion that detects presence of the sheet ejected in the ejecting portion, and when there is no sheet in the ejecting portion after a job including ejecting of the sheet into the ejecting portion ends, the power supply portion shifts from the usual mode to the power saving mode. | 06-05-2014 |
Kohei Hayamizu, Mitaka-Shi JP
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20100308691 | POWER GENERATION UNIT - A power generation unit ( | 12-09-2010 |
20110018396 | POWER GENERATION UNIT AND LIGHT EMITTING TOOL - A flexible vibration board ( | 01-27-2011 |
Kohei Hayamizu, Tokyo JP
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20110109201 | Manual control device with power generation function and remote control device with power generation function - A manual control device with a power generation function includes a manual input unit of a touch sensor type, a control unit that detects a direction input in the manual input unit and performs a control operation according to the direction, a power generation unit that is formed of piezoelectric material for power generation and arranged to a bottom side of the manual input unit, a charge unit that charges electric power from the power generation unit, and a power supply unit that supplies the electric power from the charge unit to the control unit. The operation start control unit supplies an operation instruction to the power supply unit after predetermined delay time since the electric power supply from the power generation unit to the charge unit is detected. | 05-12-2011 |
20120248937 | ELECTRIC APPARATUS PROVIDED WITH POWER GENERATING FUNCTION - A remote controller ( | 10-04-2012 |
Kohsuke Hayamizu, Chiyoda-Ku JP
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20140107080 | BRAIN FUNCTION IMPROVING AGENT - Brain function improving agents, cognitive judgment ability improving agents, as well as foods and beverages that contain krill oil as an active ingredient are provided. | 04-17-2014 |
Naoki Hayamizu, Tokyo JP
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20150131692 | SEMICONDUCTOR LASER MODULE - A semiconductor laser module | 05-14-2015 |
Naoya Hayamizu, Yokohama JP
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20150162584 | SECONDARY BATTERY - According to one embodiment, the secondary battery includes a container, an electrode structure provided in the container and an electrolyte provided in the container. The electrode structure includes a positive electrode, a negative electrode, and a separator provided between the positive electrode and the negative electrode. The separator includes an organic fiber layer accumulated on at least one of the positive electrode and the negative electrode. The organic fiber layer has contacts in which the organic fiber intersects with itself. The form of the intersections is changed by a tensile stress. | 06-11-2015 |
Naoya Hayamizu, Yokohama-Shi JP
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20080210257 | Washing method, method of manufacturing semiconductor device and method of manufacturing active matrix-type display device - In an ultrasonic washing method of washing a thing to be washed by supplying ultrasonic-wave-applied cleaning fluid to the thing, the ultrasonic wave is applied to the cleaning fluid in such a manner that the ultrasonic wave is turned on and off repeatedly at specific time intervals. | 09-04-2008 |
20090078582 | APPARATUS FOR ELECTROLYZING SULFURIC ACID, METHOD OF PERFORMING ELECTROLYSIS, AND APPARATUS FOR PROCESSING A SUBSTRATE - An apparatus for electrolyzing sulfuric acid, the apparatus comprising an electrolytic cell comprising a cathode chamber having a cathode and an anode chamber having an anode, the cathode chamber and the anode chamber being separated by a diaphragm, a sulfuric acid tank configured to store the sulfuric acid, a supply pipe connecting the sulfuric acid tank to an inlet port of the anode chamber, a connection pipe connecting an outlet port of the cathode chamber to the inlet port of the anode chamber, a first supply pump provided on the supply pipe and configured to supply the sulfuric acid from the sulfuric acid tank to the cathode chamber through the supply pipe, and a drain pipe connected to an outlet port of the anode chamber and configured to supply to a solution tank a solution containing an oxidizing agent generated by electrolysis in the anode chamber. | 03-26-2009 |
20110223333 | METHOD OF TREATING CATALYST FOR NANOCARBON PRODUCTION AND METHOD OF MANUFACTURING NANOCARBON - According to one embodiment, a method of treating catalyst for nanocarbon production comprises, bringing a surface of a catalytic material into contact with a chemical, the catalytic material containing a metallic material and being used to produce nanocarbon, corroding the surface of the catalytic material, and drying the surface of the catalytic material. | 09-15-2011 |
20150093637 | SECONDARY BATTERY - According to one embodiment, there is provided a secondary battery. This secondary battery includes an electrode and an organic-fiber layer. The electrode includes a current collector including an edge part, an active material-containing layer including an end part supported on the edge part, and a current-collecting tab including a surface a part of which is adjacent to the edge part. The organic-fiber layer is bonded with the end part of the active material-containing layer with maximum thickness and with the part of the surface of the current-collecting tab. | 04-02-2015 |
Naoya Hayamizu, Minato-Ku JP
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20090321252 | Sulfuric acid electrolytic cell and a sulfuric acid recycle type cleaning system applying the sulfuric acid electrolytic cell - In a sulfuric acid electrolytic cell to electrolyze sulfuric acid supplied to an anode compartment and a cathode compartment comprising a diaphragm, said anode compartment and said cathode compartment separated by said diaphragm, a cathode provided in said cathode compartment and a conductive diamond anode provided in said anode compartment, as said conductive diamond anode, a conductive diamond film is formed on the surface of said conductive substrate, the rear face of said conductive substrate is pasted, with conductive paste, on an current collector comprising a rigid body with size equal to, or larger than, said conductive substrate, an anode compartment frame constituting said anode compartment is contacted via gasket with the periphery on the side of the conductive diamond film of said diamond anode, said diaphragm is contacted with the front face of said anode compartment, further, with the front face of said diaphragm, the cathode compartment frame constituting said cathode compartment, a gasket, and said cathode are contacted in sequence, the rear face of said cathode is pasted with conductive paste to the current collector comprising a rigid body with size equal to, or larger than, said cathode and electric power is supplied from one current collector to the other current collector via said conductive paste. | 12-31-2009 |
20090321272 | Sulfuric acid electrolysis process - Sulfuric acid electrolysis process wherein; | 12-31-2009 |
20090325390 | Cleaning method by electrolytic sulfuric acid and manufacturing method of semiconductor device - The cleaning method by electrolytic sulfuric acid and the manufacturing method of semiconductor device comprising: | 12-31-2009 |
Taichi Hayamizu, Tokyo JP
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20080211103 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - In order to improve the reliability of a semiconductor device having a fuse formed by a Damascene technique, a barrier insulating film and an inter-layer insulating film are deposited over a fourth-layer wiring and a fuse. The barrier insulating film is an insulating film for preventing the diffusion of Cu and composed of a SiCN film deposited by plasma CVD like the underlying barrier insulating film. The thickness of the barrier insulating film covering the fuse is larger than the thickness of the underlying barrier insulating film so as to improve the moisture resistance of the fuse. | 09-04-2008 |
20100013046 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - In order to improve the reliability of a semiconductor device having a fuse formed by a Damascene technique, a barrier insulating film and an inter-layer insulating film are deposited over a fourth-layer wiring and a fuse. The barrier insulating film is an insulating film for preventing the diffusion of Cu and composed of a SiCN film deposited by plasma CVD like the underlying barrier insulating film. The thickness of the barrier insulating film covering the fuse is larger than the thickness of the underlying barrier insulating film so as to improve the moisture resistance of the fuse. | 01-21-2010 |
20110169128 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - In order to improve the reliability of a semiconductor device having a fuse formed by a Damascene technique, a barrier insulating film and an inter-layer insulating film are deposited over a fourth-layer wiring and a fuse. The barrier insulating film is an insulating film for preventing the diffusion of Cu and composed of a SiCN film deposited by plasma CVD like the underlying barrier insulating film. The thickness of the barrier insulating film covering the fuse is larger than the thickness of the underlying barrier insulating film so as to improve the moisture resistance of the fuse. | 07-14-2011 |
20120319235 | SEMICONDUCTOR DEVICE WITH A FUSE FORMED BY A DAMASCENE TECHNIQUE AND A METHOD OF MANUFACTURING THE SAME - In order to improve the reliability of a semiconductor device having a fuse formed by a Damascene technique, a barrier insulating film and an inter-layer insulating film are deposited over a fourth-layer wiring and a fuse. The barrier insulating film is an insulating film for preventing the diffusion of Cu and composed of a SiCN film deposited by plasma CVD like the underlying barrier insulating film. The thickness of the barrier insulating film covering the fuse is larger than the thickness of the underlying barrier insulating film so as to improve the moisture resistance of the fuse. | 12-20-2012 |
Takashi Hayamizu, Tokyo JP
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20090291945 | CYSTEINE PROTEASE INHIBITORS - To provide a compound having an excellent cysteine protease inhibitory effect, and to provide a drug for treatment or prevention of the disease selected from the group consisting of osteoporosis, osteoarthritis, chronic rheumatoid arthritis, Paget's disease of bone, hypercalcemia, bone metastasis of cancer, and ostealgia. A compound represented by formula (1) or a pharmaceutically acceptable salt thereof, or a drug or pharmaceutical composition containing the same as an effective component. | 11-26-2009 |
Tomoaki Hayamizu, Yokohama JP
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20150081528 | Method and System for Providing Energy Creation Service of Turbine Generator - The present invention provides a method and a system for providing an energy creation service of a turbine generator. The users can receive a desired energy creation service without any initial investment and the providers of the service can expect sufficient profits. The method includes the steps of installing a new turbine generator for a user owning a power-generating facility having a turbine generator; obtaining power generation efficiency of the new turbine generator by a monitoring device; comparing the power generation efficiency of the new turbine generator and power generation efficiency of a turbine generator predetermined as a standard, by a computing device; performing a charging process for an excess of the power generation efficiency of the new turbine generator over the power generation efficiency of the standard turbine generator, by a processing device; and charging the user for a price reflecting the excess of the power generation efficiency. | 03-19-2015 |
Yoshimitsu Hayamizu, Hiroshima-Shi JP
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20140335778 | VEHICLE SHUTTER - Provided is a vehicle shutter capable of detecting a flap to which power transmission is cut off by providing turn restriction units each having a simple structure in flaps. | 11-13-2014 |
Yoshinori Hayamizu, Tokyo JP
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20100213516 | SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE - On a surface of a semiconductor substrate, a plurality of terraces formed stepwise by an atomic step are formed in the substantially same direction. Using the semiconductor substrate, a MOS transistor is formed so that no step exists in a carrier traveling direction (source-drain direction). | 08-26-2010 |
Yoshinori Hayamizu, Nishishirakawa JP
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20100105191 | METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL WAFER - The present invention provides a method for manufacturing a silicon single crystal wafer, in which a silicon single crystal wafer that is fabricated based on a Czochralski method and has an entire plane in a radial direction formed of an N region is subjected to a rapid thermal annealing in an oxidizing atmosphere, an oxide film formed in the rapid thermal annealing in the oxidizing atmosphere is removed, and then a rapid thermal annealing is carried out in a nitriding atmosphere, an Ar atmosphere, or a mixed atmosphere of these atmospheres. As a result, there can be provided the manufacturing method that can inexpensively manufacture a silicon single crystal wafer both in which a DZ layer is formed in a wafer surface layer to provide excellent device characteristics and in which an oxide precipitate functioning as a gettering site can be sufficiently formed in a bulk region. | 04-29-2010 |
20120001301 | ANNEALED WAFER, METHOD FOR PRODUCING ANNEALED WAFER AND METHOD FOR FABRICATING DEVICE - An annealed wafer obtained by performing rapid thermal annealing on a silicon single crystal wafer sliced from a silicon single crystal ingot in which an entire plane is an OSF region, an N region outside an OSF region, or a mixed region thereof, the silicon single crystal ingot being grown by the Czochralski method, in which RIE defects do not exist in a region having at least a depth of 1 μm from a surface, a good chip yield of a TDDB characteristic is 80% or more, and a depth of a region where an oxygen concentration is decreased due to outward diffusion is within 3 μm from the surface, and a method for producing an annealed wafer. | 01-05-2012 |
Yuhei Hayamizu, Ibaraki JP
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20100173153 | BEAM-LIKE MATERIAL COMPRISING CARBON NANOTUBE AND MANUFACTURING METHOD THEREOF - A beam-like material | 07-08-2010 |
Yuuhei Hayamizu, Ibaraki JP
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20090233058 | Carbon nanotube structure and method for producing the same - An arbitrary three-dimensional shaped structure which is integrally formed with only carbon nanotubes having desired physical properties and electrical properties, and anisotropy, and a method for producing the same are disclosed. The carbon nanotube structure is constituted of a carbon nanotube aggregate comprising plural carbon nanotubes oriented in the same direction, wherein the carbon nanotube has weight density of 0.1 g/cm | 09-17-2009 |
20110111177 | CARBON NANOTUBE FILM STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A method of producing a carbon nanotube film structure having a substrate and a carbon nanotube layer, comprises a placing step of placing a carbon nanotube film comprising a plurality of carbon nanotubes aligned in one direction within a film plane on the substrate; and a densifying step of applying a densifying treatment to the carbon nanotube film thereby forming the carbon nanotube layer having the weight density of the carbon nanotube to 0.1 g/cm | 05-12-2011 |
20140093694 | CARBON NANOTUBE FILM STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A method of producing a carbon nanotube film structure having a substrate and a carbon nanotube layer, comprises a placing step of placing a carbon nanotube film comprising a plurality of carbon nanotubes aligned in one direction within a film plane on the substrate; and a densifying step of applying a densifying treatment to the carbon nanotube film thereby forming the carbon nanotube layer having the weight density of the carbon nanotube to 0.1 g/cm | 04-03-2014 |