Patent application number | Description | Published |
20080277696 | Lateral Junction Field Effect Transistor and Method of Manufacturing The Same - A lateral junction field effect transistor includes a first gate electrode layer arranged in a third semiconductor layer between source/drain region layers, having a lower surface extending on the second semiconductor layer, and doped with p-type impurities more heavily than the second semiconductor layer, and a second gate electrode layer arranged in a fifth semiconductor layer between the source/drain region layers, having a lower surface extending on a fourth semiconductor layer, having substantially the same concentration of p-type impurities as the first gate electrode layer, and having the same potential as the first gate electrode layer. Thereby, the lateral junction field effect transistor has a structure, which can reduce an on-resistance while maintaining good breakdown voltage properties. | 11-13-2008 |
20090315082 | LATERAL JUNCTION FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A lateral junction field effect transistor includes a first gate electrode layer arranged in a third semiconductor layer between source/drain region layers, having a lower surface extending on the second semiconductor layer, and doped with p-type impurities more heavily than the second semiconductor layer, and a second gate electrode layer arranged in a fifth semiconductor layer between the source/drain region layers, having a lower surface extending on a fourth semiconductor layer, having substantially the same concentration of p-type impurities as the first gate electrode layer, and having the same potential as the first gate electrode layer. Thereby, the lateral junction field effect transistor has a structure, which can reduce an on-resistance while maintaining good breakdown voltage properties. | 12-24-2009 |
Patent application number | Description | Published |
20120128081 | POWER LINE COMMUNICATION DEVICE, POWER SUPPLY CIRCUIT WITH COMMUNICATION FUNCTION, ELECTRICAL APPLIANCE, AND CONTROL AND MONITORING SYSTEM - To realize a transmission function of power line communication by a further simplified and cost-effective circuit configuration, in a PLC modem installed in an electric appliance such as a household electrical appliance. | 05-24-2012 |
20120244680 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device comprises the steps of forming a film on a main face of a semiconductor substrate having a plurality of device forming regions for forming semiconductor devices, the film having a coefficient of thermal expansion different from that of the semiconductor substrate and including a cutout on a region between the plurality of device forming regions; forming the semiconductor devices in the respective device forming regions by using the film; and dividing the semiconductor substrate into the respective device forming regions. | 09-27-2012 |
20120326774 | SWITCHING CIRCUIT - A switching circuit according to one embodiment includes: a switching element that has a first terminal and a second terminal, and is driven by a pulse signal to switch a conduction state between the first and second terminals; a power source section that supplies a voltage to the first terminal; a load circuit that is connected in parallel with the power source section; a passive circuit section that is connected between a connection point between the power source section and the load circuit, and the first terminal, and suppresses a current flowing from the connection point to the switching element at a frequency N times (N is an integer of 1 or more) as high as a clock frequency of the pulse signal; and a resonant circuit section that is connected between the passive circuit section and the connection point, and resonates at the frequency of N times. | 12-27-2012 |
20130002336 | BIDIRECTIONAL SWITCH - A bidirectional switch according to one embodiment switches bidirectionally the direction of current flowing between a first and a second terminal, and includes: first and second series circuit sections including first and second semiconductor switch elements that do not have a tolerance in a reverse direction, and first and second reverse current blocking diode sections serially connected to the first and second semiconductor switch elements in a forward direction. The first series circuit section and the second series circuit section are connected in parallel between the first and second terminals so that the forward directions of the first and second semiconductor switch elements face opposite to each other. Each of the first and second reverse current blocking diode sections is configured by connecting in parallel a diode containing GaN as a semiconductor material and a diode containing SiC as a semiconductor material. | 01-03-2013 |
20130049862 | SWITCHING CIRCUIT AND ENVELOPE SIGNAL AMPLIFIER - A switching circuit according to one embodiment has: N switching elements; a connection circuit including N−1 first inductance elements that are connected in series; a second inductance element; and N third inductance elements. Control terminals of the N switching elements are connected to ends of the connection circuit and connection contacts, respectively. One end of the second inductance element is connected to a power supply. The N third inductance elements electrically connects one ends of the N switching elements and the other end of the second inductance element with each other, respectively. | 02-28-2013 |
20130089936 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A plurality of SiC semiconductor chips are mounted on a mounting substrate (S | 04-11-2013 |
20130126866 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device in one embodiment includes a wiring board having a wiring pattern; an N semiconductor elements(where N denotes a natural number equal to or greater than 2) mounted on a wiring board; and a current detection parts for detecting a current flowing through m semiconductor elements (where m denotes a natural number equal to or greater than 1 but less than M) of M semiconductor elements(where M denotes a natural number equal to or greater than 1 but equal to or less than N) mounted on the wiring board and selected from the N semiconductor elements. The M semiconductor elements are electrically connected in parallel through the wiring pattern, and the m semiconductor elements are electrically connected in parallel to the other semiconductor elements of the M semiconductor elements through the current detection part. | 05-23-2013 |
20130135046 | SWITCHING CIRCUIT AND ENVELOPE SIGNAL AMPLIFIER - A switching circuit | 05-30-2013 |
20130279229 | POWER INVERTER CIRCUIT - A power inverter circuit | 10-24-2013 |
20140001482 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | 01-02-2014 |