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Hashiura
Masaki Hashiura, Osaka JP
| Patent application number | Description | Published |
|---|---|---|
| 20100281498 | INFORMATION PROVIDING DEVICE, INFORMATION DISPLAY DEVICE, INFORMATION PROVIDING SYSTEM, CONTROL METHOD, CONTROL PROGRAM AND STORAGE MEDIUM - A digital television ( | 11-04-2010 |
Masaki Hashiura, Kizugawa-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20080292268 | Content reproducing apparatus, content reproducing method, content reproducing system, content providing apparatus, content data structure, content reproducing program, and storage medium - The content reproducing apparatus comprises a control section which includes: a content reproduction section for reproducing a content; and a content management section for acquiring an acquisition target content in accordance with acquisition instruction information included in the content reproduced by the content reproduction section, wherein the content which is highly likely to be subsequently reproduced is acquired in accordance with the acquisition instruction information and is stored into a storage section. Thus, it is possible to realize a content reproducing apparatus which allows a content, whish is highly likely to be subsequently reproduced, to be efficiently stored therein in advance. | 11-27-2008 |
Masaki Hashiura, Osaka-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20110302058 | CONTENT PLAYBACK APPARATUS, CONTENT PLAYBACK METHOD, PROGRAM, AND RECORDING MEDIUM - Provided is a content playback apparatus capable of presenting, while playback a digital content, selling price information for the digital content being reproduced. The content playback apparatus is provided with a content playback portion which reproduces a digital content, a selling price information obtaining portion which obtains selling price information concerning the digital content, and a selling price information presentation portion which presents the obtained selling price information. The selling price information presentation portion presents, during playback of a digital content, the selling price information concerning the digital content. | 12-08-2011 |
Saku Hashiura, Kawasaki-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100117128 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor memory device has a semiconductor substrate, an impurity diffusion layer that is formed at a surface portion of the semiconductor substrate, an interlayer insulating film that is formed on the semiconductor substrate, a contact plug that penetrates the interlayer insulating film, has a top surface formed higher than a top surface of the interlayer insulating film, a region having a convex shape formed higher than the top surface of the interlayer insulating film, and contacts the impurity diffusion layer, a lower capacitor electrode film that is formed on the contact plug and a predetermined region of the interlayer insulating film, a ferroelectric film that is formed on the lower capacitor electrode film, and an upper capacitor electrode film that is formed on the ferroelectric film. | 05-13-2010 |
Saku Hashiura, Mie-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20110233680 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nonvolatile memory device including MOS transistors formed in a surface of one semiconductor substrate is provided. The device includes a first and second MOS transistors. The first MOS transistor includes a first source and drain regions spaced from each other, a first gate insulating film provided on the surface, a first gate electrode provided on the first gate insulating film, and a first channel region located immediately below the first gate insulating film and containing impurities of both conductivity types. The second MOS transistor includes a second source and drain regions spaced from each other, a second gate insulating film provided on the surface, a second gate electrode provided on the second gate insulating film, and a second channel region located immediately below the second gate insulating film and having an identical concentration profile of the impurity to the first channel region. | 09-29-2011 |