Patent application number | Description | Published |
20090078580 | Method for Forming Cu Film - As a barrier metal film, a Ti film or a Ta film is formed by sputtering method on a substrate. On top of this barrier metal film there is formed a nitride film by sputtering method. A Cu film is then formed on the nitride film by CVD method and thereafter anneal processing is performed at 100 to 400° C. In this manner, by forming the Cu film, the adhesiveness between the barrier metal film and the Cu film improves. | 03-26-2009 |
20100139556 | PURGE GAS ASSEMBLY - In a purge gas assembly provided: in an outer circumference portion of a substrate stage, with a shoulder portion offset downward below a substrate mounting surface on an upper end of the substrate stage; a purge ring enclosing a stepped circumferential surface between the substrate mounting surface and the shoulder portion; and an annular gas ejection passage for ejecting the purge gas, the gas ejecting passage being defined between the stepped circumferential surface and an inner circumferential surface of the purge ring, an arrangement is made such that the purge gas can be ejected uniformly from the gas ejection passage over the entire circumference thereof and that the deposition of a film on an upper surface of the purge ring can also be restricted, and further that the construction is simplified. The purge ring has formed therein an annular groove which recesses from a lower surface thereof upward. | 06-10-2010 |
20110104890 | METHOD FOR FORMING CU ELECTRICAL INTERCONNECTION FILM - Provided is a Cu electrical interconnection film forming method, wherein an adhesive layer (base film) having improved adhesiveness with a Cu electrical interconnection film is used, in a semiconductor device manufacturing process. After forming a barrier film on a substrate whereupon a hole or the like is formed, a PVD-Co film or a CVD-Co film or an ALD-Co film is formed on the barrier film. Then, after filling up or burying the hole or the like, which has the Co film formed on the surface, with a CVD-Cu film or a PVD-Cu film, heat treatment is performed at a temperature of 350° C. or below, and the Cu electrical interconnection film is formed. | 05-05-2011 |
20110318505 | METHOD FOR FORMING TANTALUM NITRIDE FILM AND FILM-FORMING APPARATUS FOR FORMING THE SAME - A method for forming a tantalum nitride film, which comprises supplying a gaseous nitrogen atom-containing compound, as a reactant gas and supplying gaseous t-amylimido-tris-(dimethylamide)tantalum, as a gaseous raw material, to the surface of the substrate S to thus form a tantalum nitride film on the surface of the substrate S; and a film-forming apparatus, which comprises a reactant gas supply line L | 12-29-2011 |
20120244701 | METHOD FOR FORMING NISI FILM, METHOD FOR FORMING SILICIDE FILM, METHOD FOR FORMING METAL FILM FOR USE IN SILICIDE-ANNEALING, APPARATUS FOR VACUUM PROCESSING AND FILM-FORMING APPARATUS - The method for the formation of a silicide film herein provided comprises the steps of forming an Ni film on the surface of a substrate mainly composed of Si and then heat-treating the resulting Ni film to thus form an NiSi film as an upper layer of the substrate, wherein, prior to the heat-treatment for the formation of the NiSi film, the Ni film is subjected to a preannealing treatment using H | 09-27-2012 |
20120264310 | METHOD FOR FORMING NI FILM - A method for the formation of an Ni film is herein disclosed, which comprises the steps of maintaining the temperature of an Si substrate at a desired level in a vacuum chamber; introducing, into the vacuum chamber, a nickel alkylamidinate (in this organometal compound, the alkyl group is a member selected from the group consisting of a methyl group, an ethyl group, a butyl group and a propyl group), H | 10-18-2012 |
20130023116 | METHOD FOR THE FORMATION OF CO FILM AND METHOD FOR THE FORMATION OF CU INTERCONNECTION FILM - A Co film is formed by supplying cobalt alkylamidinate, and a combined gas containing H | 01-24-2013 |
Patent application number | Description | Published |
20080199601 | Method for Forming Tantalum Nitride Film - The present invention relates to a tantalum nitride film-forming method comprising the steps of introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N═(R, R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) and an oxygen atom-containing gas into a vacuum chamber to thus form a surface adsorption layer having a thickness corresponding to one or several atoms, which consists of a compound represented by the formula: TaO | 08-21-2008 |
20090104775 | Method for Forming Tantalum Nitride Film - A tantalum nitride film rich in tantalum atoms is formed, according to the CVD technique, by simultaneously introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N=(R, R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) and NH | 04-23-2009 |
20090159430 | Method for Forming Tantalum Nitride Film - A tantalum nitride film-forming method comprises the steps of introducing, into a vacuum chamber, a raw gas consisting of a coordination compound constituted by elemental Ta having a coordinated ligand represented by the general formula: N═(R,R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) to thus adsorb the gas on a substrate; then introducing an NH | 06-25-2009 |
20090159431 | Method for Forming Tantalum Nitride Film - A tantalum nitride film-forming method comprises the steps, according to the CVD technique, of introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N═(R, R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) and a halogen gas into a film-forming chamber to thus form a film of a halogenated compound represented by the following general formula: TaN | 06-25-2009 |
20090162565 | Method for Forming Tantalum Nitride Film - A tantalum nitride film is formed by introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N═(R, R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) and an oxygen atom-containing gas into a film-forming chamber to make them react with one another on a substrate and to thus form a compound represented by the formula: TaO | 06-25-2009 |
20090246375 | METHOD FOR FORMING TANTALUM NITRIDE FILM - A tantalum nitride film-forming method comprises the steps of introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N═(R,R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms), and a halogen gas into a vacuum chamber; and reacting these components with one another on a substrate to thus form a surface adsorption film comprising a mono-atomic or multi (several)-atomic layer and composed of a compound represented by the following general formula: TaN | 10-01-2009 |