| Patent application number | Description | Published |
|---|
| 20090039423 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device with first and second groups of transistors, the second group transistors each having a lower operating voltage than that of each of said transistors in said first group, the first group transistors have first gate electrodes formed from a silicon based material layer on a semiconductor substrate through a first gate insulating film, the second group transistors have second gate electrodes formed such that metal based gate materials are respectively filled in gate formation trenches formed in an interlayer insulating film on the semiconductor substrate through a second gate insulating film, and a resistor on the substrate has a resistor main body utilizing the silicon based material layer and is formed on the substrate through an insulating film. | 02-12-2009 |
| 20090096049 | SOLID STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS - A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section. | 04-16-2009 |
| 20090189235 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD FOR THE SAME, AND IMAGING APPARATUS - A solid-state imaging device having a light-receiving section that photoelectrically converts incident light includes an insulating film formed on a light-receiving surface of the light-receiving section and a film and having negative fixed charges formed on the insulating film. A hole accumulation layer is formed on a light-receiving surface side of the light-receiving section. A peripheral circuit section in which peripheral circuits are formed is provided on a side of the light-receiving section. The insulating film is formed between a surface of the peripheral circuit section and the film having negative fixed charges such that a distance from the surface of the peripheral circuit section to the film having negative fixed charges is larger than a distance from a surface of the light-receiving section to the film having negative fixed charges. | 07-30-2009 |
| 20100053400 | SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein is a solid-state imaging device including: a semiconductor layer; a charge accumulation region configured to be formed inside the semiconductor layer and serve as part of a photodiode; and a reflective surface configured to be disposed inside or under the charge accumulation region and be so formed as to reflect light that has passed through the charge accumulation region and direct the light toward a center part of the charge accumulation region. | 03-04-2010 |
| 20100193669 | SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND IMAGING APPARATUS - Realization of an adequate hole accumulation layer and reduction in dark current are allowed to become mutually compatible. A solid-state imaging device | 08-05-2010 |
| 20100200942 | SOLID STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS - A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section. | 08-12-2010 |
| 20100203669 | SOLID STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS - A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section. | 08-12-2010 |
| 20110089312 | SOLID STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS - A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section. | 04-21-2011 |
| 20110089313 | SOLID STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS - A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section. | 04-21-2011 |
| 20110143488 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD FOR THE SAME, AND IMAGING APPARATUS - A solid-state imaging device having a light-receiving section that photoelectrically converts incident light includes an insulating film formed on a light-receiving surface of the light-receiving section and a film and having negative fixed charges formed on the insulating film. A hole accumulation layer is formed on a light-receiving surface side of the light-receiving section. A peripheral circuit section in which peripheral circuits are formed is provided on a side of the light-receiving section. The insulating film is formed between a surface of the peripheral circuit section and the film having negative fixed charges such that a distance from the surface of the peripheral circuit section to the film having negative fixed charges is larger than a distance from a surface of the light-receiving section to the film having negative fixed charges. | 06-16-2011 |
| 20110143515 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device with first and second groups of transistors, the second group transistors each having a lower operating voltage than that of each of said transistors in said first group, the first group transistors have first gate electrodes formed from a silicon based material layer on a semiconductor substrate through a first gate insulating film, the second group transistors have second gate electrodes formed such that metal based gate materials are respectively filled in gate formation trenches formed in an interlayer insulating film on the semiconductor substrate through a second gate insulating film, and a resistor on the substrate has a resistor main body utilizing the silicon based material layer and is formed on the substrate through an insulating film. | 06-16-2011 |
