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Haruka

Haruka Kamiyama, Nagasaki-Shi JP

Patent application numberDescriptionPublished
20120065263RETROVIRUS-INFECTION INHIBITOR - An infection inhibitor of retrovirus, particularly human immunodeficiency virus, comprising, as an active ingredient, at least one compound selected from the group consisting of a compound represented by the formula (I) (GGA) or a salt thereof, a compound represented by the formula (II) (NIK-333) or a salt thereof, and derivatives thereof.03-15-2012

Haruka Kusai, Kanagawa JP

Patent application numberDescriptionPublished
20120091420NONVOLATILE RESISTANCE CHANGE DEVICE - According to one embodiment a first variable resistance layer which is arranged between a second electrode and a first electrode and in which a first conductive filament is capable of growing based on metal supplied from the second electrode, and an n-th variable resistance layer which is arranged between an n-th electrode and an (n+1)-th electrode and in which an n-th conductive filament whose growth rate is different from the first conductive filament is capable of growing based on metal supplied from the (n+1)-th electrode are included, a configuration in which a plurality of conductive filaments is electrically connected in series between the first electrode layer and the (n+1)-th electrode layer is included, and a resistance is changed in a stepwise manner.04-19-2012

Haruka Miyagata, Kanagawa JP

Patent application numberDescriptionPublished
20090315867INFORMATION PROCESSING UNIT - An information processing unit of the present invention includes a display control unit that causes an icon display area, in which a plurality of icons related to each other are grouped, to be displayed and an operation unit that receives various operations by a user. When the operation unit inputs a command for expanding or contracting the icon display area in a one-dimensional direction which is the same as an arrangement direction of the plurality of the icons in the icon display area, the display control unit causes the icon display area to be expanded or contracted in the one-dimensional direction. With such a configuration, the operability can be enhanced by shortening a time for searching for a desired icon.12-24-2009

Haruka Nakamura, Tokyo JP

Haruka Narita, Kanagawa JP

Patent application numberDescriptionPublished
20080206570Resin Layer Formation Method, Resin Layer Formation Device, and Disk Manufacturing Method - A resin layer formation method, resin layer formation device, disk and disk manufacturing method for making a resin layer uniform on a substrate before lamination or on a substrate to be coated by a simple procedure are provided. Adhesive A is coated at the inner circumference side while rotating a substrate P at low speed, a first adhesive layer AL08-28-2008
20100024974BONDING METHOD AND BONDING APPARATUS - A bonding method and a bonding apparatus whereby the uniformity of an adhesive layer during application is ensured, variation of the adhesive layer during manufacture can be suppressed and the occurrence of air bubbles can be reduced. The bonding apparatus includes: a first spin coating device 1 for applying an adhesive B1 onto one surface of a first substrate P02-04-2010
20100043964BONDING METHOD AND BONDING APPARATUS - A bonding method and a bonding apparatus whereby the uniformity of an adhesive layer during application is ensured and variation of the adhesive layer during manufacture can be suppressed. The bonding apparatus includes: a first spin coating device 02-25-2010

Haruka Narita, Yokohama-Shi JP

Patent application numberDescriptionPublished
20100275840RESIN LAYER FORMATION METHOD, RESIN LAYER FORMATION DEVICE, DISK, AND DISK MANUFACTURING METHOD - A resin layer formation method, resin layer formation device, disk and disk manufacturing method for making a resin layer uniform on a substrate before lamination or on a substrate to be coated by a simple procedure are provided. Adhesive A is coated at the inner circumference side while rotating a substrate P at low speed, a first adhesive layer AL11-04-2010
20120076947RESIN LAYER FORMATION METHOD, RESIN LAYER FORMATION DEVICE, DISK AND DISK MANUFACTURING METHOD - A resin layer formation method and device for making a resin layer uniform on a substrate before lamination or on a substrate is provided. Adhesive is coated at an inner circumference side while rotating a substrate at low speed. A first adhesive layer is formed on the surface of the substrate by rotating at high speed. A step difference section is formed around a rotation center of the substrate by irradiating ultraviolet on an area in the inner circumference side of the first adhesive layer to hardening the area. Adhesive is coated at the rotation center side from the step difference section on the substrate, and a second adhesive layer is formed on the first adhesive layer by rotating the substrate at high speed. The first adhesive layer and the second adhesive layer are integrated to form a uniform adhesive layer.03-29-2012

Haruka Saito, Tokyo JP

Patent application numberDescriptionPublished
20090271420DATA CLUSTERING SYSTEM, DATA CLUSTERING METHOD, AND DATA CLUSTERING PROGRAM - An object of the present invention is to perform data clustering while preventing the processing speed from decreasing while maintaining accuracy. A block division section 10-29-2009

Haruka Saito, Fujisawa JP

Patent application numberDescriptionPublished
20110058224COLOR PROCESSOR, IMAGE FORMING APPARATUS, COLOR PROCESSING METHOD AND COMPUTER READABLE MEDIUM - A color processor includes: an acquisition unit that acquires first and second multi-valued color signals respectively indicating in a multi-valued manner quantities of first and second color materials used for reproducing color with a specific hue, the second color material having a different density from the first color material; a generation unit that generates first and second binary color signals by performing dither processing, respectively with first and second dither matrices, for the first and second multi-valued color signals acquired by the acquisition unit, the second dither matrix having the same angle and the same number of lines as the first dither matrix and being used for forming halftone dots at positions different from positions of halftone dots formed by use of the first dither matrix; and an output unit that outputs to a print mechanism the first and second binary color signals generated by the generation unit.03-10-2011

Haruka Shimizu, Kokubunji JP

Patent application numberDescriptionPublished
20080258252CIRCUIT ARRANGEMENT HAVING A FREE-WHEEL DIODE - An object of the present invention is to reduce the conducting loss of an existing conversion circuit while suppressing its noise. The present invention is typically a circuit arrangement includes at least one switching device and a free-wheel diode connected in parallel with the switching device. The free-wheel diode is formed by connecting a silicon PiN diode in parallel with a Schottky barrier diode that uses a semiconductor material having a wider band gap than silicon as a base material. The silicon PiN diode and Schottky barrier diode are separate chips.10-23-2008
20090014719SEMICONDUCTOR DEVICE WITH LARGE BLOCKING VOLTAGE - A junction FET having a large gate noise margin is provided. The junction FET comprises an n01-15-2009

Haruka Shimizu, Kodaira JP

Patent application numberDescriptionPublished
20090168471CIRCUIT DEVICE HAVING A FREE WHEELING DIODE, CIRCUIT DEVICE AND POWER CONVERTER USING DIODES - A circuit device includes at least one switching element and a free wheeling diode connected in parallel to the switching element. The free wheeling diode is made up of a Schottky barrier diode using a semiconductor material having a band gap larger than silicon as its base material and also a silicon PiN diode, which are connected in parallel. The Schottky barrier diode and the silicon PiN diode are provided in the form of separate chips. A circuit system is also provided wherein a diode having a Schottky junction of a compound semiconductor as a rectification element built therein is combined, and a relationship, R07-02-2009
20100025739SEMICONDUCTOR DEVICE WITH LARGE BLOCKING VOLTAGE AND METHOD OF MANUFACTURING THE SAME - A normally-off type junction FET in which a channel resistance is reduced without lowering its blocking voltage is provided. In a junction FET formed with using a substrate made of silicon carbide, an impurity concentration of a channel region (second epitaxial layer) is made higher than an impurity concentration of a first epitaxial layer to be a drift layer. The channel region is formed of a first region in which a channel width is constant and a second region below the first region in which the channel width becomes wider toward the drain (substrate) side. A boundary between the first epitaxial layer and the second epitaxial layer is positioned in the second region in which the channel width becomes wider toward the drain (substrate) side.02-04-2010
20100163935SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a junction FET of a normally-off type, a technique capable of achieving both of improvement of a blocking voltage and reduction of an ON resistance is provided. In a junction FET using silicon carbide as a substrate material, impurities are doped to a vicinity of a p-n junction between a gate region and a channel-formed region, the impurities having a conductive type which is reverse to that of impurities doped in the gate region and same as that of impurities doped in the channel-formed region. In this manner, an impurity profile of the p-n junction becomes abrupt, and further, an impurity concentration of a junction region forming the p-n junction with the gate region in the channel-formed region is higher than those of a center region in the channel-formed region and of an epitaxial layer.07-01-2010
20110018004SEMICONDUCTOR DEVICE WITH LARGE BLOCKING VOLTAGE AND MANUFACTURING METHOD THEREOF - There is no effective method for fabricating a semiconductor power device containing UMOSFET possessing large channel mobility and whose threshold voltage can be lowered with no loss in blocking voltage. A semiconductor device with large blocking voltage is provided utilizing silicon carbide trench MOSFET possessing both narrow regions where the p body concentration is low, and wide regions where the p body concentration is high.01-27-2011
20110198613SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - The leakage current generated in a pn junction region between a gate and a source is reduced in a junction FET using a silicon carbide substrate. In a trench junction FET using a silicon carbide substrate, nitrogen is introduced into a sidewall and a bottom surface of a trench, thereby forming an n type layer and an n08-18-2011
20110220916ELECTRONIC CIRCUIT DEVICE - A normally-off type silicon carbide junction FET has a problem that the gate thereof is not easy to use due to inferiority in the characteristics of it. This problem occurs because in order to achieve normally-off, the gate voltage should be off at 0V and at the same time, the ON-state gate voltage should be suppressed to about 2.5V to prevent the passage of an electric current through a pn junction between gate and source. Accordingly, a range from the threshold voltage to the ON-state gate voltage is only from about 1 V to 2V and it is difficult to control the gate voltage. Provided in the present invention is an electronic circuit device obtained by coupling, to a gate of a normally-off type silicon carbide junction FET, an element having a capacitance equal to or a little smaller than the gate capacitance of the junction FET.09-15-2011

Patent applications by Haruka Shimizu, Kodaira JP

Haruka Takahashi, Tokyo JP

Patent application numberDescriptionPublished
20110046113AMINE COMPOUND AND USE THEREOF - It is intended to provide novel amine compounds which are efficacious against diseases such as infection with HIV virus, rheumatism and cancer metastasis. Namely, amine compounds represented by the following general formula (1):02-24-2011

Patent applications by Haruka Takahashi, Tokyo JP

Haruka Takahashi, Tokushima JP

Patent application numberDescriptionPublished
20090264404Derivatives of 4-piperazin-1-yl-4-benzo[b]thiophene suitable for the treatment of cns disorders - A heterocyclic compound or a salt thereof represented by the formula (1): where R10-22-2009
20100179322Piperazine-substituted benzothiophenes for treatment of mental disorders - The present invention provides a heterocyclic compound represented by the general formula (1): The compound of the present invention has a wide treatment spectrum for mental disorders including central nervous system disorders, no side effects and high safety.07-15-2010
20110152286PIPERAZINE-SUBSTITUTED BENZOTHIOPHENES FOR TREATMENT OF MENTAL DISORDERS - The present invention provides a heterocyclic compound represented by the general formula (1): The compound of the present invention has a wide treatment spectrum for mental disorders including central nervous system disorders, no side effects and high safety.06-23-2011
20120028920DERIVATIVES OF 4-PIPERAZIN-1-YL-4-BENZO[B]THIOPHENE SUITABLE FOR THE TREATMENT OF CNS DISORDERS - A heterocyclic compound or a salt thereof represented by the formula (1):02-02-2012

Patent applications by Haruka Takahashi, Tokushima JP

Haruka Taniguchi, Otsu-Shi JP

Patent application numberDescriptionPublished
20110230330DIELECTRIC MATERIAL FOR PLASMA DISPLAY PANEL AND GLASS PLATE FOR PLASMA DISPLAY PANEL - The invention provides a dielectric material for a plasma display panel which can be fired at a low temperature, is less likely to cause warpage in a glass substrate when fired on the glass substrate and can increase the strength of the glass substrate when fired on the glass substrate, and a glass plate for a plasma display panel including a dielectric layer formed using the dielectric material. The dielectric material for a plasma display panel contains ZnO—B09-22-2011
20110263409DIELECTRIC MATERIAL FOR PLASMA DISPLAY PANEL AND GLASS PLATE FOR PLASMA DISPLAY - The invention provides a dielectric material for a plasma display panel which has a low dielectric constant, can be fired at a low temperature, for example, 600° C. or below, causes no warpage in a glass substrate when fired on the glass substrate and can increase the strength of the glass substrate when fired on the glass substrate, and a glass plate for a plasma display panel including a dielectric layer formed using the dielectric material. The dielectric material for a plasma display panel according to the present invention is a dielectric material for a plasma display panel containing ZnO—B10-27-2011

Haruka Tsuda, Saitama JP

Patent application numberDescriptionPublished
20080236922WINDSHIELD CONTROLLER FOR MOTORCYCLE - A windshield controller for a motorcycle includes a receiver which receives a signal transmitted from a portable communication device; a start permission device which judges whether or not to permit start of an engine based on the signal received by the receiver; and a control device which controllably drives a movable windscreen disposed on a cowling at a front portion of a vehicle body, wherein the control device judges whether or not the portable communication device is away from the vehicle body based on the signal received by the receiver, and when it is judged that the portable communication device is away from the vehicle body, the control device controls to move the movable windscreen to a standby position.10-02-2008
20090195011SCREEN FOR MOTORCYCLE - A screen for a vehicle which allows air flow to flow appropriately along a rear face of a wind screen having an adjustable inclination angle. A baffle plate inclined toward the rear direction of a vehicle body is provided between a cowling which covers a front upper portion of the vehicle body and a movable wind screen. The inclination angle of the baffle plate can be adjusted so that air flow from between the cowling and the movable wind screen flows along a rear face of the movable wind screen.08-06-2009

Patent applications by Haruka Tsuda, Saitama JP

Haruka Ueda, Tokyo JP

Patent application numberDescriptionPublished
20110295544METHOD AND DEVICE FOR LIVING SPACE ADDED VALUE EFFICACY INDEX EVALUATION - A measured value for a PMV within a living space is sent to a comfort efficacy evaluating device. Occupancy information (the current number of occupants N) in the living space is sent to the comfort efficacy evaluating device. The comfort efficacy evaluating device calculates a comfort index P as P=1.0−|PMV|/3, and this comfort index P is weighted by the number of occupants N at the time that the comfort index P was taken. In this case, if the number of occupants is relatively high, the weighting is high, and if the number of occupants is relatively low, then the weighting is low. Additionally, the weighted comfort index P is integrated over an evaluation interval, and thus integrated value, or a weighted average based on this integrated value, is used as a comfort efficacy index TP. An evaluation of the efficacy of energy conservation can be performed in the same way, taking into account the current occupancy of the living space.12-01-2011

Haruka Yamakawa, Okayama JP

Patent application numberDescriptionPublished
20100294421METHOD FOR MANUFACTURING REINFORCED RUBBER HOSE - An inner mold having, on the outer surface thereof, corrugations matching the shape of the bellows, and an outer mold having, on the inner surface thereof, corrugations matching the shape of the bellows, are used. An airbag that is previously and at least partially formed into a bellows shape is placed on an outer side of the inner mold so as to cover at least a corrugated part with the airbag. A cylindrical preform comprising unvulcanized rubber and a reinforcement material is placed on the outer side of the airbag. An outer mold is placed on the outer side of the preform. A pressurized fluid is supplied between the inner mold and the airbag so as to inflate the airbag. The preform is vulcanized under heating while being pressed against an inner surface of the outer mold, whereby a reinforced rubber hose is manufactured.11-25-2010