| Patent application number | Description | Published |
|---|
| 20080283487 | PROCESS FOR PRODUCING THREE-DIMENSIONAL PHOTONIC CRYSTAL AND THE THREE-DIMENSIONAL PHOTONIC CRYSTAL - A process for producing a three-dimensional photonic crystal comprises the steps of providing a base material having first and second faces adjoining together at a first angle; forming a first mask on the first face; forming fine holes in the base material by dry-etching on the first face in a direction at a second angle to the first face; forming a second mask on the second face; and forming fine holes in the base material by dry-etching on the second face in a direction at a third angle to the second face; the first mask and the second mask, being formed by implantation of ions by a focused ion beam onto the surface layer of the mask formation face of the base material. | 11-20-2008 |
| 20080283493 | METHOD FOR FORMING ETCHING MASK, METHOD FOR FABRICATING THREE-DIMENSIONAL STRUCTURE AND METHOD FOR FABRICATING THREE-DIMENSIONAL PHOTONIC CRYSTALLINE LASER DEVICE - A method for forming an etching mask comprises the steps of: irradiating focus ion beam to a surface of a substrate and forming an etching mask used for oblique etching including an ion containing portion in the irradiated region. A method for fabricating a three-dimensional structure comprises the steps of: preparing a substrate; irradiating focus ion beam to a surface of the substrate and forming an etching mask including an ion containing portion in the irradiated region; and dry-etching the substrate from a diagonal direction using the etching mask and forming a plurality of holes. | 11-20-2008 |
| 20080286892 | METHOD FOR FABRICATING THREE-DIMENSIONAL PHOTONIC CRYSTAL - A method for fabricating a three-dimensional photonic crystal comprises the steps of: forming a dielectric thin film; injecting ions selectively into the dielectric thin film by using a focus ion beam to form a mask on the dielectric thin film; forming a pattern by selectively removing an exposed part of the dielectric thin film at which the mask is not formed on the dielectric thin film; forming a sacrificial layer on the dielectric thin film having the pattern formed therein; and flattening the sacrificial layer formed on the dielectric thin film until the pattern comes to the surface. | 11-20-2008 |
| 20080298744 | PHOTONIC CRYSTAL STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A photonic crystal structure is provided the optical characteristics of which vary periodically in at least one direction, wherein the base material of the photonic crystal structure is formed of a dielectric material, a region containing at least one of molecules, atoms and ions different from the constituent element of the base material is provided in the base material, and the region is arranged in the base material so that the density of one of the molecules, atoms and ions varies periodically in the one direction. | 12-04-2008 |
| 20090315153 | NANO STRUCTURE AND MANUFACTURING METHOD OF NANO STRUCTURE - To provide a method of manufacturing a nano structure having a pattern of 2 μm or more in depth formed on the surface of a substrate containing Si and a nano structure having a pattern of a high aspect and nano order. A nano structure having a pattern of 2 μm or more in depth formed on the surface of a substrate containing Si, wherein the nano structure is configured to contain Ga or In on the surface of the pattern, and has the maximum value of the concentration of the Ga or the In positioned within 50 nm of the surface of the pattern in the depth direction of the substrate. Further, its manufacturing method is configured such that the surface of the substrate containing Si is irradiated with a focused Ga ion or In ion beam, and the Ga ions or the In ions are injected, while sputtering away the surface of the substrate, and a layer containing Ga or In is formed on the surface of the substrate, and with this layer taken as an etching mask, a dry etching is performed. | 12-24-2009 |
| 20100233432 | IMPRINT METHOD AND PROCESSING METHOD OF SUBSTRATE - An imprint method in which imprinting of a pattern of a mold onto a resin material on a substrate is repeated multiple times. The imprint method includes the steps of preparing the mold including a light blocking member at a position where the pattern is not formed, forming a pattern for the first time by bringing the mold into contact with a photocurable resin material provided on the substrate, forming a first processed area by curing the photocurable resin material by light irradiation, and removing a part of the photocurable resin material extruded from the first processed area into an outside area at a periphery of the first processed area. | 09-16-2010 |
| 20110027998 | Method of Manufacturing A Nano Structure By Etching, Using A Substrate Containing Silicon - A method of manufacturing a nano structure by etching, using a substrate containing Si. A focused Ga ion or In ion beam is irradiated on the surface of the substrate containing Si. The Ga ions or the In ions are injected while sputtering away the surface of the substrate so that a layer containing Ga or In is formed on the surface of the substrate. Dry etching by a gas containing fluorine (F) is performed with the layer containing the Ga or the In formed on the surface of the substrate taken as an etching mask, and the nano structure is formed having a pattern of at least 2 μm tin in depth according to a predetermined line width. | 02-03-2011 |
| 20110042352 | IMPRINT METHOD AND PROCESSING METHOD OF SUBSTRATE USING THE IMPRINT METHOD - An imprint method for imprinting a pattern of a mold onto a resin material on a substrate. The imprint method includes a step of forming a processed area in which an imprint pattern corresponding to the pattern of the mold is formed, and an outside area formed of a periphery of the processed area, by bringing the mold into contact with the resin material formed on the substrate, so that a portion of the resin material is extruded from the processed area into the outside area, a step of forming a protection layer for protecting the processed area, and a step of removing a layer of the resin material in the outside area, while the imprint pattern formed on a layer of the resin material in the processed area, is protected by the protection layer, so as not to be removed. | 02-24-2011 |
