Patent application number | Description | Published |
20080198343 | Systems and methods for insitu lens cleaning in immersion lithography - An immersion lithography apparatus is provided that includes an energy source, a projection optical system, a stage, a showerhead including an immersion liquid supply device and an immersion liquid discharge device that produces a flow of liquid within an exposure zone, and a cleaning device that cleans a portion of the projection optical system having been contacted with the immersion liquid by means of a cleaning gas. In an embodiment, the cleaning device includes a gas supply device and a gas discharge device that produce a flow of cleaning gas into the exposure zone. In embodiments, the apparatus includes a stage that includes a dose sensor and/or an ultra-violet light source. A method for insitu cleaning of a final lens element within an immersion lithography system having an immersion fluid showerhead that provides immersion fluid to an exposure zone of the immersion lithography system is also provided. | 08-21-2008 |
20080285428 | System and Method for Forming Nanodisks Used in Imprint Lithography and Nanodisk and Memory Disk Formed Thereby - A system and method form a nanodisk that can be used to form isolated data bits on a memory disk. The imprint stamp is formed from first and second overlapping patterns, where the patterns are selectively etched. The selective etching leaves either pits or posts on the imprint stamp. The pits or posts are imprinted on the memory disk, leaving either pits or posts on the memory disk. The pits or posts on the memory disk are processed to form relatively small and dense isolated data bits. Instability of the isolated data bits caused by outside magnetic and thermal influences is substantially eliminated. | 11-20-2008 |
20090109411 | Systems and Methods for Insitu Lens Cleaning Using Ozone in Immersion Lithography - An immersion lithography apparatus is provided that includes an energy source, a projection optical system, a stage, a showerhead including an immersion liquid supply device and an immersion liquid discharge device that produces a flow of liquid within an exposure zone, and a cleaning device that cleans a portion of the projection optical system having been contacted with the immersion liquid by means of a cleaning gas. In an embodiment, the cleaning device includes an ozone generation unit produces a flow of ozone into the exposure zone. In embodiments, the apparatus includes a stage that includes a dose sensor and/or an ultra-violet light source. A method for insitu cleaning of a final lens element within an immersion lithography system having an immersion fluid showerhead that provides immersion fluid to an exposure zone of the immersion lithography system is also provided. | 04-30-2009 |
20090109412 | Lithographic apparatus and device manufacturing method - A lithographic apparatus comprises an immersion fluid system and an interferometric temperature detection system. The immersion fluid system is configured to provide immersion fluid to an exposure system. The interferometric temperature detection system is configured to measure a temperature of the immersion fluid. | 04-30-2009 |
20090153826 | Lithographic method and apparatus - A multiple patterning process employs a phase change material, portions of which can be converted to an amorphous state and then a remaining portion is selectively removed to provide high resolution pattern features with a feature spacing smaller than, for example, a minimum spacing available in a conventional patterning layer employing a single exposure. A lithographic apparatus for use in the process may comprise an exposure tool having a single illuminator and single patterning device that is imaged through a single exposure slit onto a scanning substrate. Alternatively, the exposure tool may have multiple illuminators and/or multiple scanning complementary patterning devices optionally used with multiple exposure slits on the scanning substrate to facilitate double patterning in a single substrate pass. | 06-18-2009 |
20090185149 | IMMERSION LITHOGRAPHIC APPARATUS WITH IMMERSION FLUID RE-CIRCULATING SYSTEM - A lithographic apparatus includes a projection system, a fluid handling structure, a metrology device, and a recycling control device. The projection system is configured to project a patterned radiation beam onto a target portion of a substrate, the substrate being supported on a substrate table. The fluid handling structure is configured to provide an immersion fluid to a space between the projection system and the substrate and/or substrate table. The metrology device is configured to monitor a parameter of the immersion fluid. The recycling control device regulates a routing of the immersion fluid either to be reused by the fluid handling structure or to be reconditioned based on the quality of immersion fluid indicated by the metrology device. | 07-23-2009 |
20090190106 | IMMERSION LITHOGRAPHY APPARATUS - An immersion lithographic apparatus is disclosed having a projection system, a liquid supply system, and a recycling system. The projection system is configured to project a patterned radiation beam onto a target portion of a substrate, wherein a substrate table is configured to support the substrate. The liquid supply system is configured to provide an immersion liquid to a space between the projection system and the substrate or the substrate table. The recycling system is configured to collect the immersion liquid from the liquid supply system and to supply the immersion liquid to the liquid supply system. The recycling system includes a fiber configured to remove organic contaminants from the immersion liquid. | 07-30-2009 |
20090213343 | RE-FLOW AND BUFFER SYSTEM FOR IMMERSION LITHOGRAPHY - A system is disclosed to isolate an environmental chamber of an immersion lithographic apparatus, to which an immersion fluid comprising liquid, is provided from an external environment. Further, there is disclosed a system for measuring flow rate and/or vapor concentration of a gas using a transducer to send and/or receive an acoustic signal. | 08-27-2009 |
20090257044 | LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD - A lithographic apparatus and method for simultaneously exposing two patterning devices onto a substrate is disclosed. In an embodiment, a lithographic apparatus includes a plurality of illumination systems for receiving and conditioning a pulsed radiation beam, a beam director arranged between a source of the pulsed radiation and the illumination systems for alternately directing pulses of the radiation beam to the respective illumination systems, a support table for holding a plurality of patterning devices, each of the patterning devices being capable of imparting a respective conditioned radiation beam with a pattern in its cross-section to form a plurality of patterned radiation beams, and a projection system configured to project each of the plurality of patterned radiation beams coincidentally onto a target portion of a substrate. In an embodiment, the substrate is covered with a phase change material. | 10-15-2009 |
20100033698 | Full Wafer Width Scanning Using Steps and Scan System - A system and method are provided for writing a pattern onto a substrate. A patterned beam of radiation is produced using a reticle and projected onto a substrate to expose the pattern. Reticle and substrate speeds are controlled such that respective scanning speeds of the reticle and the substrate allow the pattern to be exposed across an entire width of the substrate in the scanning direction, which provides a substantial increase in wafer throughput. | 02-11-2010 |
20100053574 | Liquid Immersion Lithography System Comprising a Tilted Showerhead Relative to a Substrate - A liquid immersion lithography system includes projection optics (PL) and a showerhead ( | 03-04-2010 |
20100149505 | EUV Mask Inspection System - Disclosed are apparatuses, methods, and lithographic systems for EUV mask inspection. An EUV mask inspection system can include an EUV illumination source, an optical system, and an image sensor. The EUV illumination source can be a standalone illumination system or integrated into the lithographic system, where the EUV illumination source can be configured to illuminate an EUV radiation beam onto a target portion of a mask. The optical system can be configured to receive at least a portion of a reflected EUV radiation beam from the target portion of the mask. Further, the image sensor can be configured to detect an aerial image corresponding to the portion of the reflected EUV radiation beam. The EUV mask inspection system can also include a data analysis device configured to analyze the aerial image for mask defects. | 06-17-2010 |
20100165310 | EUV Mask Inspection - A system for inspecting an extreme ultra violet (EUV) mask. The system includes an array of sensors and an optical system. The array of sensors is configured to produce analog data corresponding to received optical energy. The optical system is configured to direct EUV light from an inspection area of an EUV patterning device onto the array of sensors, whereby the analog data is used to determine defects or to compensate for irregularities found on the EUV mask. | 07-01-2010 |
20100214544 | FLUID HANDLING DEVICE, AN IMMERSION LITHOGRAPHIC APPARATUS AND A DEVICE MANUFACTURING METHOD - A fluid handling device for an immersion lithographic apparatus, the fluid handling device comprising: at least one body with a surface facing a space for fluid; a plurality of openings for the flow of fluid therethrough defined in the surface; at least one barrier moveable relative to the plurality of openings for selectively allowing or preventing the flow of fluid through selected openings of the plurality of openings. | 08-26-2010 |
20100271604 | SYSTEM AND METHOD TO INCREASE SURFACE TENSION AND CONTACT ANGLE IN IMMERSION LITHOGRAPHY - A system and method to allow organic fluids to be used in immersion lithographic systems. This is done by providing a showerhead portion of a liquid supply system that is partially coated or made from a TEFLON like material. The TEFLON like material reduces wetness effect, and thus increases containment, when using an organic immersion fluid in a space between the last optic and the substrate. | 10-28-2010 |
20100301458 | Alignment Target Contrast in a Lithographic Double Patterning Process - A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The day may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist). | 12-02-2010 |
20100323171 | Apparatus and Method for Providing Resist Alignment Marks in a Double Patterning Lithographic Process - A method is described for alignment of a substrate during a double patterning process. A first resist layer containing at least one alignment mark is formed on the substrate. After the first resist layer is developed, a second resist layer is deposited over the first resist layer, leaving a planar top surface (i.e., without topography). By baking the second resist layer appropriately, a symmetric alignment mark is formed in the second resist layer with little or no offset error from the alignment mark in the first resist layer. The symmetry of the alignment mark formed in the second resist can be enhanced by appropriate adjustments of the respective thicknesses of the first and second resist layers, the coating process parameters, and the baking process parameters. | 12-23-2010 |
20110075238 | Method and System for Increasing Alignment Target Contrast - A semiconductor wafer is aligned using a double patterning process. A first resist layer having a first optical characteristic is deposited and foams at least one alignment mark. The first resist layer is developed. A second resist layer having a second optical characteristic is deposited over the first resist layer. The combination of first and second resist layers and alignment mark has a characteristic such that radiation of a pre-determined wavelength incident on the alignment mark produces a first or higher order diffraction as a function of the first and second optical characteristics. | 03-31-2011 |
20110085726 | Tunable Wavelength Illumination System - A lithographic apparatus has an alignment system including a radiation source configured to convert narrow-band radiation into continuous, flat and broad-band radiation. An acoustically tunable narrow pass-band filter filters the broad-band radiation into narrow-band linearly polarized radiation. The narrow-band radiation may be focused on alignment targets of a wafer so as to enable alignment of the wafer. In an embodiment, the filter is configured to modulate an intensity and wavelength of radiation produced by the radiation source and to have multiple simultaneous pass-bands. The radiation source generates radiation that has high spatial coherence and low temporal coherence. | 04-14-2011 |
20110122380 | IMMERSION PHOTOLITHOGRAPHY SYSTEM AND METHOD USING INVERTED WAFER-PROJECTION OPTICS INTERFACE - A liquid immersion photolithography system includes an exposure system that exposes a substrate with electromagnetic radiation, and also includes an optical system that images the electromagnetic radiation on the substrate. A liquid is between the optical system and the substrate. The projection optical system is positioned below the substrate. | 05-26-2011 |
20110261335 | SYSTEMS AND METHODS FOR THERMALLY-INDUCED ABERRATION CORRECTION IN IMMERSION LITHOGRAPHY - Immersion lithography aberration control systems and methods that compensate for a heating effect of exposure energy in an immersion fluid across an exposure zone are provided. An aberration control system includes actuators that adjust optical elements within the immersion lithography system and a fluid heating compensation module coupled to the actuators. The fluid heating adjustment module determines actuator commands to make aberration adjustments to optical elements within the immersion lithography system based on changes in one or more of a flow rate of the immersion liquid, an exposure dose and a reticle pattern image. In an embodiment, the aberration control system includes an interferometric sensor that pre-calibrates aberrations based on changes in operating characteristics related to the immersion fluid. Methods are provided that calibrate aberrations, determine actuator adjustments and implement actuator adjustments upon changes in operating characteristics to control aberration effects. | 10-27-2011 |
20120013866 | LITHOGRAPHIC APPARATUS, FLUID COMBINING UNIT AND DEVICE MANUFACTURING METHOD - A system for tuning the refractive index of immersion liquid in an immersion lithographic apparatus is disclosed. Two or more immersion liquids of different refractive index are mixed together in order to achieve a desired refractive index. Further, the fluids may be conditioned and treated to maintain optical characteristics. | 01-19-2012 |
20120075606 | Mask Inspection with Fourier Filtering and Image Compare - A mask inspection system with Fourier filtering and image compare can include a first detector, a dynamic Fourier filter, a controller, and a second detector. The first detector can be located at a Fourier plane of the inspection system and can detect a first portion of patterned light produced by an area of a mask. The dynamic Fourier filter can be controlled by the controller based on the detected first portion of the patterned light. The second detector can detect a second portion of the patterned light produced by the section of the mask and transmitted through the dynamic Fourier filter. Further, the mask inspection system can include a data analysis device to compare the second portion of patterned light with another patterned light. Consequently, the mask inspection system is able to detect any possible defects on the area of the mask more accurately and with higher resolution. | 03-29-2012 |
20130017378 | Apparatus and Method for Providing Resist Alignment Marks in a Double Patterning Lithographic Process - A method is described for alignment of a substrate during a double patterning process. A first resist layer containing at least one alignment mark is formed on the substrate. After the first resist layer is developed, a second resist layer is deposited over the first resist layer, leaving a planar top surface (i.e., without topography). By baking the second resist layer appropriately, a symmetric alignment mark is formed in the second resist layer with little or no offset error from the alignment mark in the first resist layer. The symmetry of the alignment mark formed in the second resist can be enhanced by appropriate adjustments of the respective thicknesses of the first and second resist layers, the coating process parameters, and the baking process parameters. | 01-17-2013 |
20130258316 | Tunable Wavelength Illumination System - A lithographic apparatus has an alignment system including a radiation source configured to convert narrow-band radiation into continuous, flat and broad-band radiation. An acoustically tunable narrow pass-band filter filters the broad-band radiation into narrow-band linearly polarized radiation. The narrow-band radiation may be focused on alignment targets of a wafer so as to enable alignment of the wafer. In an embodiment, the filter is configured to modulate an intensity and wavelength of radiation produced by the radiation source and to have multiple simultaneous pass-bands. The radiation source generates radiation that has high spatial coherence and low temporal coherence. | 10-03-2013 |
20140192333 | Alignment Target Contrast in a Lithographic Double Patterning Process - A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist). | 07-10-2014 |
20140253891 | TUNABLE WAVELENGTH ILLUMINATION SYSTEM - A lithographic apparatus comprises an alignment system including a tunable narrow pass-band filter configured to receive a broad-band radiation and to filter the broad-band radiation into narrow-band linearly polarized radiation. The tunable narrow pass-band filter is further configured to modulate an intensity and wavelength of the narrow-band radiation and to provide a plurality of pass-band filters at a same time or nearly the same time. The alignment system further includes a relay and mechanical interface configured to receive the narrow-band radiation and to adjust a profile of the narrow-band radiation based on physical properties of alignment targets on a substrate. The adjusted narrow-band radiation is focused on the alignment targets using a focusing system. | 09-11-2014 |