Patent application number | Description | Published |
20120003773 | QUANTUM DOT SENSITIZED WIDE BANDGAP SEMICONDUCTOR PHOTOVOLTAIC DEVICES & METHODS OF FABRICATING SAME - A quantum dot (QD) sensitized wide bandgap (WBG) semiconductor heterojunction photovoltaic (PV) device comprises an electron conductive layer; an active photovoltaic (PV) layer adjacent the electron conductive layer; a hole conductive layer adjacent the active PV layer; and an electrode layer adjacent the hole conductive layer. The active PV layer comprises a wide bandgap (WBG) semiconductor material with E | 01-05-2012 |
20120097525 | METHOD AND APPARATUS TO CONTROL IONIC DEPOSITION - A sputtering source having a bias field generated between the substrate and the sputtering source. A conductive louver or grid arrangement is positioned in front of the substrate, and is biased by an RF or DC source. The substrate itself may or may not be biased, as needed. The conductive louvers are rotatable to also function as shutters or collimator to control the flux of the deposited species. The shutter arrangement is mounted onto the sputtering opening of a facing target source (FTS). The shutter is biased by an RF or DC source and the applied power and rotation position of each slat in the shutter are controlled to achieve the desired flux and collimation. | 04-26-2012 |
20120152726 | METHOD AND APPARATUS TO PRODUCE HIGH DENSITY OVERCOATS - A deposition system is provided, where conductive targets of similar composition are situated opposing each other. The system is aligned parallel with a substrate, which is located outside the resulting plasma that is largely confined between the two cathodes. A “plasma cage” is formed wherein the carbon atoms collide with accelerating electrons and get highly ionized. The electrons are trapped inside the plasma cage, while the ionized carbon atoms are deposited on the surface of the substrate. Since the electrons are confined to the plasma cage, no substrate damage or heating occurs. Additionally, argon atoms, which are used to ignite and sustain the plasma and to sputter carbon atoms from the target, do not reach the substrate, so as to avoid damaging the substrate. | 06-21-2012 |
20130161183 | SYSTEM ARCHITECTURE FOR COMBINED STATIC AND PASS-BY PROCESSING - Disclosed is a substrate processing system which enables combined static and pass-by processing. Also, a system architecture is provided, which reduces footprint size. The system is constructed such that the substrates are processed therein vertically, and each chamber has a processing source attached to one sidewall thereof, wherein the other sidewall backs to a complementary processing chamber. The chamber system can be milled from a single block of metal, e.g., aluminum, wherein the block is milled from both sides, such that a wall remains and separates each two complementary processing chambers. | 06-27-2013 |
20140008214 | METHOD TO PRODUCE HIGHLY TRANSPARENT HYDROGENATED CARBON PROTECTIVE COATING FOR TRANSPARENT SUBSTRATES - A physical vapor deposition (PVD) chamber for depositing a transparent and clear hydrogenated carbon, e.g., hydrogenated diamond-like carbon, film. A chamber body is configured for maintaining vacuum condition therein, the chamber body having an aperture on its sidewall. A plasma cage having an orifice is attached to the sidewall, such that the orifice overlaps the aperture. Two sputtering targets are situated on cathodes inside the plasma cage and are oriented opposite each other and configured to sustain plasma there-between and confined inside the plasma cage. The plasma inside the cage sputters material from the targets, which then passes through the orifice and aperture and lands on the substrate. The substrate is moved continuously in a pass-by fashion during the process. | 01-09-2014 |
20140102888 | METHOD AND APPARATUS TO PRODUCE HIGH DENSITY OVERCOATS - A deposition system is provided, where conductive targets of similar composition are situated opposing each other. The system is aligned parallel with a substrate, which is located outside the resulting plasma that is largely confined between the two cathodes. A “plasma cage” is formed wherein the carbon atoms collide with accelerating electrons and get highly ionized. The electrons are trapped inside the plasma cage, while the ionized carbon atoms are deposited on the surface of the substrate. Since the electrons are confined to the plasma cage, no substrate damage or heating occurs. Additionally, argon atoms, which are used to ignite and sustain the plasma and to sputter carbon atoms from the target, do not reach the substrate, so as to avoid damaging the substrate. | 04-17-2014 |
20140287268 | CoPtCr-BASED BIT PATTERNED MAGNETIC DEVICE - Provided herein is an apparatus, including a plurality of spaced apart perpendicular magnetic elements. Each of the magnetic elements includes a respective discrete magnetic domain and each of the magnetic elements includes a magnetic recording layer comprising a Co | 09-25-2014 |
Patent application number | Description | Published |
20090214896 | PERPENDICULAR RECORDING MAGNETIC MEDIA HAVING A GRANULAR MAGNETIC RECORDING LAYER AND AN AMORPHOUS SOFT UNDERLAYER - A perpendicular magnetic recording medium having a substrate, an amorphous soft underlayer of thickness 30 nm or greater, and a granular magnetic recording layer for perpendicular recording is disclosed. The granular magnetic recording layer includes a non-magnetic region between magnetic grains, wherein the non-magnetic region includes metal nitride or metal carbide and provides exchange decoupling between the magnetic grains. The perpendicular recording medium of this invention reduces DC noise and increases media signal-to-noise ratio; it reduces surface roughness, which in turn reduces the head-to-media spacing and the head-to-amorphous soft underlayer spacing. | 08-27-2009 |
20100043872 | Photovoltaic Device With an Up-Converting Quantum Dot Layer and Absorber - A photovoltaic apparatus includes an absorber including a first quantum dot layer having a first plurality of quantum dots of a first quantum dot material in a first matrix material, and an up-converter layer positioned adjacent to the absorber layer, the up-converter layer including a second quantum dot layer having a second plurality of quantum dots of a second quantum dot material and a second matrix material. | 02-25-2010 |
20100044675 | Photovoltaic Device With an Up-Converting Quantum Dot Layer - A photovoltaic apparatus includes an absorber layer, and an up-converter layer positioned adjacent to the absorber layer, the up-converter layer including a plurality of quantum dots of first material in a matrix of a second material. In one example, the first material has a lower bandgap than the absorber layer, and the second material comprises a semiconductive material or an insulator. | 02-25-2010 |
20100047595 | Thin Film Template For Fabrication of Two-Dimensional Quantum Dot Structures - An apparatus includes a first seedlayer including a hexagonal close-packed alloy with a sigma phase addition, and an active layer including a plurality of quantum dots on the first seedlayer. The apparatus can further include a substrate, an adhesion layer on the substrate, and a wetting layer on the adhesion layer, wherein the first seedlayer is on the wetting layer. | 02-25-2010 |
20100051095 | Hybrid Photovoltaic Cell Using Amorphous Silicon Germanium Absorbers With Wide Bandgap Dopant Layers and an Up-Converter - A photovoltaic apparatus includes an absorber including a p-layer having a bandgap greater than about 2 eV, an n-layer having a bandgap greater than about 2 eV, and an amorphous SiGe intrinsic layer between the p-layer and the n-layer; a first electrode adjacent to a first side of the absorber; a second electrode adjacent to a second side of the absorber; and an up-converter layer positioned adjacent to the second electrode on an opposite side of the second electrode from the absorber, wherein the up-converter layer includes a plurality of quantum dots of a first material in a matrix of a second material. | 03-04-2010 |
20100147380 | Hybrid Photovoltaic Cell Using Amorphous Silicon Germanium Absorbers and Wide Bandgap Dopant Layers - A photovoltaic apparatus includes a p-layer having a bandgap greater than about 2 eV, an n-layer having a bandgap greater than about 2 eV, and an absorber layer between the p-layer and the n-layer, wherein the absorber layer includes SiGe. The ratio of Si to Ge in the absorber layer can be selected to obtain an absorber bandgap between about 1.1 and about 1.4 eV. | 06-17-2010 |
20100215846 | GRANULAR PERPENDICULAR MAGNETIC RECORDING MEDIA WITH DUAL RECORDING LAYER AND METHOD OF FABRICATING SAME - A granular perpendicular magnetic recording medium comprises a non-magnetic substrate and a granular perpendicular magnetic recording layer overlying the substrate, comprising a first granular perpendicular magnetic layer proximal the substrate and having a first saturation magnetization (M | 08-26-2010 |
20120225324 | PERPENDICULAR MEDIA WITH DUAL SOFT MAGNETIC LAYERS - A recording medium having a substrate, a first soft magnetic underlayer, a second soft magnetic underlayer and a perpendicular magnetic recording layer without a spacer layer between the first and second soft magnetic underlayers is disclosed. | 09-06-2012 |
20140178714 | Method and Manufacture Process for Exchange Decoupled First Magnetic Layer - A perpendicular magnetic recording medium having a dual-layer magnetic film is disclosed. The bottom layer is completely exchange decoupled, and the top layer contains a certain amount of exchange coupling optimized for recording performance. Preferably, the bottom magnetic layer contains stable oxide material (for example, TiO | 06-26-2014 |