| Patent application number | Description | Published |
|---|
| 20090160253 | System and Method of Providing Power Using Switching Circuits - In a particular illustrative embodiment, a system is disclosed that includes a first power domain that is responsive to a first power switching circuit and a second power domain that is responsive to a second power switching circuit. The system also includes a logic circuit adapted to selectively activate the first power switching circuit and the second power switching circuit. At least one of the first power switching circuit and the second power switching circuit includes a first set of transistors adapted for activation during a first power up stage and a second set of transistors adapted for activation during a second power up stage after at least one of the first set of transistors are activated. | 06-25-2009 |
| 20090174453 | System and Method of Conditional Control of Latch Circuit Devices - A circuit device includes a first input to receive a reset control signal and a second input coupled to an output of a latch. The circuit device also includes a logic circuit adapted to conditionally reset the latch based on a state of the output in response to receiving the reset control signal. | 07-09-2009 |
| 20090268540 | Systems and Methods for Dynamic Power Savings in Electronic Memory Operation - Power reduction is accomplished in an electronic memory by segmenting portions of the memory and only enabling certain memory portions depending upon where the memory is to be accessed. In one embodiment, the bit lines are segmented using latch repeaters to control address selection with respect to segments beyond a first segment. The latch repeaters are, in one embodiment, allowed to remain in their operated/non-operated state at the completion of a memory read/write cycle. This then avoids successive enabling pulses when the same segment is accessed on successive cycles. | 10-29-2009 |
| 20090323453 | Dynamic Power Saving Memory Architecture - A memory includes multiple interface ports. The memory also includes at least two sub-arrays each having an instance of all of the bit lines of the memory and a portion of the word lines of the memory. The memory has a common decoder coupled to the sub-arrays and configured to control each of the word lines. The memory also includes multiplexers coupled to each of the interface ports. The multiplexers are configured to cause the selection of one of the sub-arrays based upon an address of a memory cell received at one or more of the interface ports. | 12-31-2009 |
| 20100188894 | IN-SITU RESISTANCE MEASUREMENT FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM) - A method of measuring resistance of a magnetic tunnel junction (MTJ) of an MRAM memory cell includes applying a voltage of a selected level to a memory cell comprising an MTJ in series with a memory cell transistor in a conducting state. A current through the memory cell is determined. A variable voltage is applied to a replica cell not having an MTJ and comprising a replica cell transistor in a conducting state. A value of the variable voltage is determined, wherein a resulting current through the replica cell is substantially the same as the current through the memory cell. The MTJ resistance is computed by taking the difference of the memory cell voltage and the determined variable replica cell voltage and dividing the result by the determined memory cell current. | 07-29-2010 |
| 20100195379 | System and Method of Pulse Generation - In a particular embodiment, a device includes a reference voltage circuit to generate a controlled voltage. The device includes a frequency circuit configured to generate a frequency output signal having a pre-set frequency and a counter to generate a count signal based on the pre-set frequency. The device also includes a delay circuit coupled to receive the count signal and to produce a delayed digital output signal and a latch to generate a pulse. The pulse has a first edge responsive to a write command and a trailing edge formed in response to the delayed digital output signal. In a particular embodiment, the pulse width of the pulse corresponds to an applied current level that exceeds a critical current to enable data to be written to an element of the memory but does not exceed a predetermined threshold. | 08-05-2010 |
| 20100250865 | Self-Timing For A Multi-Ported Memory System - Multi-ported memory systems (e.g., register files) employ self-timing for operational synchronization. Thus, rather than using a reference clock duty cycle for operational synchronization, as in conventional multi-ported register files, embodiments of the present disclosure employ self-timing for such operational synchronization. According to certain embodiments, self-timing is employed to synchronize all the internal events within the memory so that all the events are spaced in time for appropriate synchronization. For instance, the completion of one event leads to triggering another event, the completion of which leads to triggering another event, and so on. Thus, in one embodiment, the self-timing is achieved by referencing the operational events with the memory (or register file) to each other, rather than to a reference clock duty cycle. | 09-30-2010 |
| 20100290305 | Systems and Methods for Dynamic Power Savings in Electronic Memory Operation - Reduction of line delay is accomplished in an electronic memory by segmenting portions of the memory and only enabling certain memory portions depending upon where the memory is to be accessed. In one embodiment, the bit lines are segmented using latch repeaters to control the bit line length for address selection. The latch repeaters are, in one embodiment, allowed to remain in their operated/non-operated state at the completion of a memory read/write cycle. This then avoids successive enabling pulses when the same segment is accessed on successive cycles. | 11-18-2010 |
| 20110128771 | Resistance Based Memory Circuit With Digital Sensing - A method of sensing a data value stored at a resistance based memory is disclosed. The method includes receiving a data signal from a data cell. The data cell includes a resistance based memory element. A reference signal is received from a reference circuit. The reference circuit includes a resistance based memory element. The data signal is converted to a data output signal having a first frequency. The reference signal is converted to a reference output signal having a second frequency. A first output signal is generated when the first frequency exceeds the second frequency. A second output signal is generated when the second frequency exceeds the first frequency. | 06-02-2011 |
